IGBT 400 AMP Search Results

Contextual Info: MOTOROLA Order this document by MHPM2A400A60M/D SEMICONDUCTOR TECHNICAL DATA MHPM2A400A60M Preliminary Data Sheet Hybrid Power Module High Current IGBT Module 400 AMP, 600 VOLT HYBRID POWER MODULE • 400 Amp, 600 Volt IGBT Half–Bridge • Low On–Voltage, High Speed IGBTs

7MB150N-120

Abstract: 7MB140N-120 IGBT 400 amp IGBT 50 amp 1200 volt p607 150 VOLT 12 AMP diode 7MBR15NF120 7mbr25nf120 2MBI75N-120 7MBR10NF120
Contextual Info: • 22 3 fl7T e O O O B ^ b bô? <s ■ THIRD GENERATION IGBT 1200 VOLT, N-SERIES SINGLE MODULES • 200 - 600 Amp Device VCES. Type lc Pc Cont. P er IGBT Volts A m ps 200 1200 1200 300 1200 300 1200 300 1200 400 1200 : 400 400 1200 1200 600 1MBI200N-120 1MBI300N-120

NT 407 F TRANSISTOR TO 220

Abstract: MOTOROLA TRANSISTOR T2 NT 407 F MOSFET TRANSISTOR MGP20N40CL 632 transistor motorola mosfet ignition coil NT 407 F TRANSISTOR
Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

MGP20N40CL

Abstract: NT 407 F power transistor NT 407 F TRANSISTOR TO 220
Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

MGP20N40CL

Abstract: NT 407 F TRANSISTOR TO 220 MGP20N40CL-D
Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

GP20N40CL

Abstract: transistor tl 430 c
Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information M GP20N40CL SMARTDISCRETES In tern ally Clam ped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

B8204

Abstract: NGB8204N NGB8204NT4
Contextual Info: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses

8201NG

Abstract: 8201n NGD 8201NG NGD8201NG NGD8201N NGD8201NT4 NGD8201NT4G
Contextual Info: NGD8201N Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses

8204NG

Abstract: GB8204 NGB8204N NGB8204NT4 NGB8204NT4G GB8204NG
Contextual Info: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses

0005P

Abstract: 350VVGE
Contextual Info: NGB8204N Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses

18n40b

Abstract: GB18N40B NGB18N40CLB NGB18N40CLBT4 NGB18N40CLBT4/D
Contextual Info: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses

N40B

Abstract: G18N40B g18n40
Contextual Info: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

G18N40B

Abstract: N40B NGD18N40CLBT4 NGD18N40CLB aac marking g18n40
Contextual Info: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

18n40bg

Abstract: GB18N40BG 18n40b NGB18N40CLBT4 NGB18N40CLBT4G GB18N40B NOR GATE IC
Contextual Info: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

NGD8201ANT4G

Abstract: NGD8201AN NGD8201N NGD8201NT4G NGD8201A ignition IGBT
Contextual Info: NGD8201N, NGD8201AN Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses

G18N40B

Abstract: N40B ignition IGBT g18n40
Contextual Info: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

18n40b

Abstract: GB18N40B GB18N40 ignition IGBT NGB18N40CLBT4
Contextual Info: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

18n40b

Abstract: GB18N40B GB18N40
Contextual Info: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses

MHPM2A400A60M

Abstract: motorola hybrid module A60M MOTOROLA Power Factor MOTOROLA Hybrid Power Module
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MHPM2A400A60WD DATA . MHPM2A4~A60M Preliminary Data %eet Hybrid Power Module IGBT Module High Current . 400 Amp, 600 Volt IGBT Half-Btidge ● Low On–Voltage, ● Excellent Shoti Circuit Capability

NGB18N40CLBT4G

Abstract: NGB18N40A
Contextual Info: NGB18N40CLB, NGB18N40ACLB Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

Contextual Info: NGB18N40CLB, NGB18N40ACLB Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

N40B

Abstract: g18n40 G18N40B 18n40b NGB18N40CLBT4 NGD18N40CLB NGD18N40CLBT4 4-30VDC
Contextual Info: NGD18N40CLBT4, NGB18N40CLBT4 Product Preview Ignition IGBT 18 Amps, 400 Volts http://onsemi.com N–Channel DPAK, D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses

Contextual Info: THIRD GENERATION IGBT 1200 VOLT, N-SERIES SINGLE MODULES • 200 - 600 Amp Device Type . V e to ': lc Pc Cont. P tr IG B T Volte Amps W atts 200 1200 1500 1200 300 2100 300 :2100y. 1200 1200 300 ’ 2100 .[fitawi-M 400 3100 1200 400 3100 400 3100 .,.:1200J:, 600

Contextual Info: m u m Ê X QIP0640001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 Hermetic Package TBD Asymmetrical Half Bridge IGBT H-Series Hermetic Module 400 Amperes/600 Volts Description: Powerex IGBT Hermetic modules are designed for use in switching applications.