IGBT 400 AMP Search Results

Contextual Info: MOTOROLA Order this document by MHPM2A400A60M/D SEMICONDUCTOR TECHNICAL DATA MHPM2A400A60M Preliminary Data Sheet Hybrid Power Module High Current IGBT Module 400 AMP, 600 VOLT HYBRID POWER MODULE • 400 Amp, 600 Volt IGBT Half–Bridge • Low On–Voltage, High Speed IGBTs

7MB150N-120

Abstract: 7MB140N-120 IGBT 400 amp IGBT 50 amp 1200 volt p607 150 VOLT 12 AMP diode 7MBR15NF120 7mbr25nf120 2MBI75N-120 7MBR10NF120
Contextual Info: • 22 3 fl7T e O O O B ^ b bô? <s ■ THIRD GENERATION IGBT 1200 VOLT, N-SERIES SINGLE MODULES • 200 - 600 Amp Device VCES. Type lc Pc Cont. P er IGBT Volts A m ps 200 1200 1200 300 1200 300 1200 300 1200 400 1200 : 400 400 1200 1200 600 1MBI200N-120 1MBI300N-120

NT 407 F TRANSISTOR TO 220

Abstract: MOTOROLA TRANSISTOR T2 NT 407 F MOSFET TRANSISTOR MGP20N40CL 632 transistor motorola mosfet ignition coil NT 407 F TRANSISTOR
Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

MGP20N40CL

Abstract: NT 407 F TRANSISTOR TO 220 MGP20N40CL-D
Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

8204NG

Abstract: GB8204 NGB8204N NGB8204NT4 NGB8204NT4G GB8204NG
Contextual Info: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses

18n40b

Abstract: GB18N40B NGB18N40CLB NGB18N40CLBT4 NGB18N40CLBT4/D
Contextual Info: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses

G18N40B

Abstract: N40B NGD18N40CLBT4 NGD18N40CLB aac marking g18n40
Contextual Info: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

N40BG

Abstract: G18N40bg G18N40B NGD18N40CLBT4G N40B G18 N40BG NGD18N40CLB NGD18N40CLBT4
Contextual Info: NGD18N40CLB Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

NGD8201ANT4G

Abstract: NGD8201AN NGD8201N NGD8201NT4G NGD8201A ignition IGBT
Contextual Info: NGD8201N, NGD8201AN Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses

G18N40B

Abstract: N40B ignition IGBT g18n40
Contextual Info: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

18n40b

Abstract: GB18N40B GB18N40 ignition IGBT NGB18N40CLBT4
Contextual Info: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

Contextual Info: NGB18N40CLB, NGB18N40ACLB Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

007C

Contextual Info: Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 CM400HC-24NFM Single IGBT NFM-Series Module 400 Amperes/1200 Volts SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) VCC = 600V 10 5 400 800 1200 1600 100 101 2000 102 103 GATE CHARGE, QG, (nC)

NGB8202NT4G

Abstract: NGB8202AN NGB8202ANT4G NGB8202N NGB8202A
Contextual Info: NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses

Contextual Info: NGD8201B Ignition IGBT, 20 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

B8202

Abstract: b820 NGB8202N NGB8202NT4
Contextual Info: NGB8202N Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

g18n40

Abstract: NGD18N40CLBT4G 350VVGE NGD18N40A Direct fuel injection
Contextual Info: NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

Contextual Info: NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

NGP8203N

Contextual Info: NGP8203N Advance Information Ignition IGBT 20 A, 400 V, N−Channel TO−220 This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

VS-GT400TH120N

Contextual Info: VS-GT400TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 400 A FEATURES • Low VCE on trench IGBT technology • Low switching losses • 10 s short circuit capability • VCE(on) with positive temperature coefficient

VS-GT400TH120N

Contextual Info: VS-GT400TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 400 A FEATURES • Low VCE on trench IGBT technology • Low switching losses • 10 s short circuit capability • VCE(on) with positive temperature coefficient

BI400N

Contextual Info: • 22307^2 OOOB^E: bö? ■ THIRD GENERATION IGBT § 1200 VOLT, N-SERIES SINGLE MODULES • 200 - 600 Amp Device Pc VcE(sat PeriGST Max. lc ton toff Volts Amps Watts Volts Amps usee. usee. 1200 1200 1200 1200 1200 1200 1200 1200 200 300 300 300 400 400

VS-GT400TH120U

Contextual Info: VS-GT400TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V, 400 A FEATURES • Low VCE on trench IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C

VS-GT400TH120U

Contextual Info: VS-GT400TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V, 400 A FEATURES • Low VCE on trench IGBT technology • 10 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C