GP20N Search Results

GP20N40CL

Abstract: transistor tl 430 c
Contextual Info: MOTOROLA Order this document by GP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information M GP20N40CL SMARTDISCRETES In tern ally Clam ped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

GP20N

Contextual Info: MOTOROLA Order this document by GP20N35CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information M GP20N35CL SMARTDISCRETES In tern ally Clam ped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 350 VOLTS (CLAMPED) T his Logic Level Insulated G ate B ip o la r T ra n s is to r (IG BT)

GW20NB60K

Abstract: GW20NB60 gp20nb60 STGP20NB60K STGW20NB60K
Contextual Info: GP20NB60K STGW20NB60K N-CHANNEL 20A - 600V - TO-220/TO-247 SHORT CIRCUIT PROOF PowerMESH IGBT TYPE GP20NB60K STGW20NB60K • ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE sat IC 600 V 600 V < 2.8 V < 2.8 V 20 A 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)

gw20nc60v

Abstract: GP20NC60V STGP20NC60V STGW20NC60V ic MARKING QG TO247 package dissipation
Contextual Info: GP20NC60V STGW20NC60V N-CHANNEL 30A - 600V - TO-220/TO-247 Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE GP20NC60V STGW20NC60V • ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C 600 V 600 V < 2.5 V < 2.5 V 30 A

GW20NC60V

Abstract: STGB20NC60V STGP20NC60V GW20NC60 GB20NC60V JESD97 STGB20NC60VT4 STGW20NC60V GP20NC60V
Contextual Info: STGB20NC60V - GP20NC60V STGW20NC60V 30 A - 600 V - very fast IGBT Features • High frequency operation up to 50 kHz ■ Lower CRES / CIES ratio no cross-conduction susceptibility ■ High current capability 2 3 3 1 1 Applications TO-247 2 TO-220 3 ■

gp20nb60

Abstract: gw20nb60 GW20N STGP20NB60K STGW20NB60K schematic diagram UPS IGBT GW20NB60K
Contextual Info: GP20NB60K STGW20NB60K N-CHANNEL 20A - 600V - TO-220/TO-247 SHORT CIRCUIT PROOF PowerMESH IGBT TYPE GP20NB60K STGW20NB60K • ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE sat IC 600 V 600 V < 2.8 V < 2.8 V 20 A 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)

GP20N

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advanced Information SMARTDISCRETES Internally Clamped, N-Cltannel IGBT GP20N40CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT VCE on = 1-8 VOLTS 400 VOLTS (CLAMPED) T his Logic Level Insulated G ate Bipolar Transistor (IGBT)

Contextual Info: MOTOROLA Order this document by GP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview GP20N14CL SMARTDISCRETES In tern ally Clam ped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N -C H A N N E L IGBT T his Logic Level Insulated G ate B ip o la r T ra n s is to r IG BT

gw20nc60v

Abstract: GW20NC60 gp20nc60 GP20NC60V
Contextual Info: GP20NC60V - STGW20NC60V N-CHANNEL 30A - 600V TO-220/TO-247 Hyper Fast PowerMESH IGBT TYPE VCES VCE sat (Max)@25°C IC (#) @100°C GP20NC60V 600 V < 2.5 V 30 A STGW20NC60V 600 V < 2.5 V 30 A • ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT

Contextual Info: MOTOROLA Order this document by GP20N60U/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet GP20N60U Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high

Contextual Info: MOTOROLA Order this document by GP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview GP20N14CL SMARTDISCRETES In tern ally Clam ped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N -C H A N N E L IGBT T his Logic Level Insulated G ate B ip o la r T ra n s is to r IG BT

ignition IGBT

Contextual Info: MOTOROLA Order this document by GP20N63CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview GP20N63CL In tern ally Clam ped N-Channel IGBT T h is L o g ic L e v e l In s u la te d G a te B ip o la r T ra n s is to r IG B T fe a tu re s G a te - E m itte r E S D p ro te c tio n , G a te C o lle c to r O v e r V oltage P rotection from m on olithic circu itry fo r usage as an Ignition

gp20n60

Abstract: transistor fall time MJ10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet GP20N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

GW20NC60

Abstract: gp20nc60
Contextual Info: STGB20NC60V - GP20NC60V STGW20NC60V 30 A - 600 V - very fast IGBT Features • High frequency operation up to 50 kHz ■ Lower CRES / CIES ratio no cross-conduction susceptibility ■ High current capability 1 Applications 2 3 1 TO-247 2 3 TO-220 3 ■