IGBT 1200V 60A Search Results
IGBT 1200V 60A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| GT50J123 |
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IGBT, 600 V, 59 A, TO-3P(N) | Datasheet | ||
| GT30J122A |
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IGBT, 600 V, 30 A, TO-3P(N) | Datasheet | ||
| GT20J121 |
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IGBT, 600 V, 20 A, TO-220SIS | Datasheet | ||
| GT30J121 |
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IGBT, 600 V, 30 A, TO-3P(N) | Datasheet | ||
| GT20J341 |
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IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS | Datasheet |
IGBT 1200V 60A Datasheets Context Search
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Contextual Info: APTGV25H120BG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V , IC = 25A @ Tc = 80°C Boost chopper + Full - Bridge NPT & Trench + Field Stop IGBT Power module K K VBUS1 Fast NPT IGBT Q5: VCES = 1200V ; IC = 50A @ Tc = 80°C VBUS2 Q1 CR5 G1 Fast NPT IGBT Q2, Q4: |
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APTGV25H120BG | |
IGBT full bridge
Abstract: APTGV25H120BG IGBT 1200V 60A APT0501 APT0502 600V igbt dc to dc boost converter
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APTGV25H120BG IGBT full bridge APTGV25H120BG IGBT 1200V 60A APT0501 APT0502 600V igbt dc to dc boost converter | |
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Contextual Info: APTGV50H120T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 1200V ; IC = 50A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 1200V ; IC = 50A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter |
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APTGV50H120T3G | |
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Contextual Info: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYR100N120C3 (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES |
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IC110 IXYR100N120C3 110ns ISOPLUS247TM 100N120C3 | |
100N120C3Contextual Info: Preliminary Technical Information IXYR100N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES |
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IXYR100N120C3 IC110 110ns ISOPLUS247TM 100N120C3 | |
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Contextual Info: APTGV25H120T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 1200V ; IC = 25A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 1200V ; IC = 25A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter |
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APTGV25H120T3G | |
100N120C3Contextual Info: Advance Technical Information IXYR100N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES VCGR |
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IXYR100N120C3 IC110 110ns ISOPLUS247TM 100N120C3 | |
APT0406
Abstract: APT0502 APTGV25H120T3G
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APTGV25H120T3G APT0406 APT0502 APTGV25H120T3G | |
APT0406
Abstract: APT0502 APTGV50H120T3G
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APTGV50H120T3G APT0406 APT0502 APTGV50H120T3G | |
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Contextual Info: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYH40N120B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR |
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IC110 IXYH40N120B3D1 183ns O-247 IF110 | |
GB15XP120KContextual Info: Bulletin I27169 Rev.D 10/03 GB15XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features Gen. 5 NPT 1200V IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses |
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I27169 GB15XP120K 18-Jul-08 GB15XP120K | |
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Contextual Info: Bulletin I27169 Rev.D 10/03 GB15XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features Gen. 5 NPT 1200V IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses |
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I27169 GB15XP120K 12-Mar-07 | |
IXYN100N120C3H1Contextual Info: Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120C3H1 High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR |
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IXYN100N120C3H1 IC110 110ns OT-227B, E153432 IF110 100N120C3 IXYN100N120C3H1 | |
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Contextual Info: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYJ20N120C3D1 (Electrically Isolated Tab) = = ≤ = 1200V 7A 4.0V 108ns High-Speed IGBT for 20-50 kHz Switching ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings |
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IC110 IXYJ20N120C3D1 108ns O-247TM E153432 IF110 | |
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Contextual Info: Preliminary Technical Information IXYR50N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 32A 4.0V 43ns High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C |
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IXYR50N120C3D1 ISOPLUS247TM IF110 | |
IXYR50N120C3D1Contextual Info: Advance Technical Information IXYR50N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 32A 4.0V 43ns High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C |
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IF110 IXYR50N120C3D1 ISOPLUS247TM IXYR50N120C3D1 | |
C3834Contextual Info: Advance Technical Information MMIX1G120N120A3V1 VCES = 1200V GenX3TM 1200V IGBT w/ Diode IC110 = 105A VCE sat ≤ 2.2V (Electrically Isolated Tab) Ultra-Low-Vsat PT IGBT for 3kHz Switching C G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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MMIX1G120N120A3V1 IC110 IC110 C3834 | |
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Contextual Info: APT40GR120B2DU30 APT40GR120B2DU30 1200V, 40A, VCE on = 2.5V Typical Ultra Fast NPT - IGBT with Ultra Soft Recovery Diode The Ultra Fast 1200V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between |
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APT40GR120B2DU30 | |
QR30Contextual Info: Advance Technical Information IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C |
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IXYH40N120C3D1 O-247 IF110 062in. QR30 | |
IXYH40N120C3Contextual Info: Preliminary Technical Information IXYH40N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C |
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IXYH40N120C3D1 O-247 IF110 062in. IXYH40N120C3 | |
Ultra fast diodeContextual Info: Advance Technical Information IXYH20N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C |
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IXYH20N120C3D1 IC110 108ns O-247 IF110 062in. Ultra fast diode | |
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Contextual Info: Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode MMIX1Y100N120C3H1 VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 3.5V 110ns C G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C |
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MMIX1Y100N120C3H1 IC110 110ns IF110 MMIX1Y100N120C3H1 | |
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Contextual Info: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) IXYH40N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 40A 4.0V 38ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C |
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IXYH40N120C3D1 O-247 IF110 | |
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Contextual Info: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYH20N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C |
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IC110 IXYH20N120C3D1 108ns O-247 IF110 | |