MITSUBISHI CM400
Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low
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MITSUBISHI CM400
MITSUBISHI CM300
H BRIDGE inverters circuit diagram using igbt
NPN/transistor NEC K 2500
HALF BRIDGE NPN DARLINGTON POWER MODULE
ups circuit diagram using igbt
IGBT h-series application note
CM30 igbt
CM400
MITSUBISHI cm50-24h
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Untitled
Abstract: No abstract text available
Text: PD - 97060 IRGC4065B PDP TRENCH IGBT TRENCH IGBT Die in Wafer Form 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuit in PDP Application l Low VCE on and Energy per Pulse (EPULSETM) for
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O-220
IRGC4065B
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HEP230
Abstract: 2MBI600UE-060 7MBR50UA060 6mbi60 7MBR75UB060 2MBI300UB-060 7MBR30UA060 2MBI400UB-060 fuji transistor modules fuji bipolar transistor
Text: T-series and U-series IGBT Modules 600 V Seiji Momota Syuuji Miyashita Hiroki Wakimoto 110 2. T-series IGBT Modules 2.1 Features and challenges of T-series IGBT modules The cell structure of an NPT-type IGBT and the unit cell of PT (punch-through)-type device are shown
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IRGC4055B
Abstract: No abstract text available
Text: PD - 97045A IRGC4055B PDP TRENCH IGBT TRENCH IGBT Die in Wafer Form 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuit in PDP Application l Low VCE on and Energy per Pulse (EPULSETM) for
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7045A
O-220
IRGC4055B
IRGC4055B
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bsm 25 gd 1200 n2
Abstract: bsm 75 gd 120 n2 siemens mosfet BSM 50 siemens igbt bsm 50 gd 120 n2 Thyristor Tabelle BSM15GD BSM15GD120DN 250068 BSM15GD120DN2
Text: Technische Angaben Technical Information 1 Übersicht IGBT-Module 1 Overview IGBT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V, 1200 V und 1700 V und im Strombereich
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TTRN-3825H
Abstract: No abstract text available
Text: Datasheet AS3635 Xenon Flash Driver with 5V IGBT Control 1 General Description 2 Key Features Build in 5V charge-pump for IGBT gate drive The AS3635 is a highly integrated photoflash charger with build in IGBT driver. Photoflash voltage accuracy programmable to ±3%
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AS3635
AS3635
320mA
com/AS3635
TTRN-3825H
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4kv flash trigger coil 4 pin
Abstract: toshiba datecode GRM155R61A105 TTRN-3825H marking code onsemi Z Diode LDT4520T-01 GT8G133 TTRN-3825 TIG058E8 TTRN-3822
Text: Datasheet AS3635 Xenon Flash Driver with 5V IGBT Control 1 General Description 2 Key Features Build in 5V charge-pump for IGBT gate drive The AS3635 is a highly integrated photoflash charger with build in IGBT driver. Photoflash voltage accuracy programmable to ±3%
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AS3635
AS3635
320mA
com/AS3635
4kv flash trigger coil 4 pin
toshiba datecode
GRM155R61A105
TTRN-3825H
marking code onsemi Z Diode
LDT4520T-01
GT8G133
TTRN-3825
TIG058E8
TTRN-3822
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siemens igbt chip
Abstract: Semiconductor Group igbt break resistor in igbt bup 314 siemens igbt application note
Text: IGBT Insulated Gate Bipolar Transistor 1 Differences Between MOSFET and IGBT 1.1 Structure The IGBT combines in it all the advantages of the bipolar and MOS field effect transistor. As can be seen from the structures shown below, the only difference lies in the additional
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MITSUBISHI CM300
Abstract: MITSUBISHI CM400 cm1000ha-24h Igbt wafer cm15 300v CM400 CM600HU-24F Mitsubishi Electric IGBT MODULES CM600HA-24H cm300 igbt
Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 4.1 Structure and Operation of IGBT Module 4.0 Using IGBT Modules Powerex IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low
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MITSUBISHI CM300
MITSUBISHI CM400
cm1000ha-24h
Igbt wafer
cm15 300v
CM400
CM600HU-24F
Mitsubishi Electric IGBT MODULES
CM600HA-24H
cm300 igbt
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AN-983
Abstract: AN983 INT-944 PN channel MOSFET 10A equivalent irf840 IRF840 complementary irgbc20u Similar Equivalent transistors for IRGPC50U sec irf840 TRANSISTOR mosfet IRF840
Text: Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET . 1 2. Silicon Structure And Equivalent Circuit . 2 3. Conduction Characteristics. 2
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AN-983
1000C,
AN-983
AN983
INT-944
PN channel MOSFET 10A
equivalent irf840
IRF840 complementary
irgbc20u Similar
Equivalent transistors for IRGPC50U
sec irf840
TRANSISTOR mosfet IRF840
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INT-944
Abstract: Equivalent transistors for IRGPC50U INT-990 1000C AN-983 BUX98 C50U IRF840 IRGBC20U IRGBC40S
Text: Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET . 1 2. Silicon Structure And Equivalent Circuit . 2 3. Conduction Characteristics. 2
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AN-983
055mJ/A
1000C,
INT-944
Equivalent transistors for IRGPC50U
INT-990
1000C
AN-983
BUX98
C50U
IRF840
IRGBC20U
IRGBC40S
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for IR IGBT die
Abstract: IRG7CH30K10B IRG7PH30K10 IRG7CH
Text: PD - 97135A IRG7CH30K10B IRG7CH30K10B IGBT Die in Wafer Form Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 S short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Co-Efficient
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7135A
IRG7CH30K10B
IRG7CH30K10B
150mm
O-247
AN-1086
for IR IGBT die
IRG7PH30K10
IRG7CH
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IGBT inverter calculation
Abstract: 3 phase IGBT inverter design design drive circuit of IGBT inverter circuit using IGBT module igbt igbt sixpack IXAN0070 IGBT JUNCTION TEMPERATURE CALCULATION igbt 600V 100A short circuit IGBT CHIP 1700V
Text: IXAN0070 Drive with the IXYS XPT IGBT IXYS used its expertise to design the optimal IGBT for motor drives applications By Iain Imrie, Jeroen van Zeeland, Ulrich Kelberlau, Vladimir Tsukanov and Elmar Wisotzki IXYS Corporation IXYS introduces the XPT IGBT, IXYS newest generation of short-circuit rated IGBTs with paralleling
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IXAN0070
IGBT inverter calculation
3 phase IGBT inverter design
design drive circuit of IGBT
inverter circuit using IGBT module
igbt
igbt sixpack
IXAN0070
IGBT JUNCTION TEMPERATURE CALCULATION
igbt 600V 100A short circuit
IGBT CHIP 1700V
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IGBT inverter calculation
Abstract: inverter circuit using IGBT module 3 phase IGBT inverter design IGBT inverter calculation FOR A UPS igbt module testing calculation of switching frequency of igbt inverter design drive circuit of IGBT IGBT igbt uses in rectifier IGBT JUNCTION TEMPERATURE CALCULATION
Text: ISSN: 1863-5598 Electronics in Motion and Conversion ZKZ 64717 05-08 May 2008 COVER STORY The Optimal IGBT for Motor Drives Applications Drive with the XPT IGBT IXYS introduces the XPT IGBT, the newest generation of short-circuit rated IGBTs with paralleling capabilities and competitive performance. Implementation of innovative cell
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TOSHIBA IGBT DATA BOOK
Abstract: MIG10J504H
Text: MIG10J504H TOSHIBA Intelligent IGBT Module MIG10J504H Features • The 4th generation trench gate thin wafer NPT IGBT is adopted. • FRD is built in. • I/O input: logic level 3.3 V / 5 V • The level shift circuit by high-voltage IC is built in. •
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MIG10J504H
TOSHIBA IGBT DATA BOOK
MIG10J504H
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Untitled
Abstract: No abstract text available
Text: MIG12J504L TOSHIBA Intelligent IGBT Module MIG12J504L Features • The 4th generation trench gate thin wafer NPT IGBT is adopted. • FRD is built in. • I/O input: logic level 3.3 V / 5 V • The level shift circuit by high-voltage IC is built in. •
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MIG12J504L
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abb traction motor
Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12
Text: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the
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CH-5600
1768/138a
29palms
abb traction motor
diode 6.5 kv
5SMY 12M4500
76E-12
IGBT 6500 V
86M1280
5SMY86J1280
ABB IGBT
76J1280
76M12
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MIG12J504L
Abstract: No abstract text available
Text: MIG12J504L TOSHIBA Intelligent IGBT Module MIG12J504L Features • The 4th generation trench gate thin wafer NPT IGBT is adopted. • FRD is built in. • I/O input: logic level 3.3 V / 5 V • The level shift circuit by high-voltage IC is built in. •
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MIG12J504L
MIG12J504L
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MOSFET welding INVERTER 200A
Abstract: Mosfet 30A 300V APT30GS60BRDL MIC4452 single phase igbt based WELDING inverter 200 amps SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A
Text: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower
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APT30GS60BRDL
100kHz,
MOSFET welding INVERTER 200A
Mosfet 30A 300V
MIC4452
single phase igbt based WELDING inverter 200 amps
SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A
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Untitled
Abstract: No abstract text available
Text: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower
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APT30GS60BRDL
100kHz,
O-247
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IXDN0018
Abstract: MOSFET and IGBT die and 150 mm wafer products IGBT die
Text: IXDN0018 3540 Bassett Street Santa Clara, CA 95054, USA Phone: +1-408-982-0700 Fax: +1-408-727-7087 October 16, 2003 MOSFET and IGBT die and 150 mm wafer products Customer: Various IXYS product type: MOSFET and IGBT die and 150 mm wafer products. Description of changes:
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IXDN0018
IXDN0018
MOSFET and IGBT die and 150 mm wafer products
IGBT die
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Untitled
Abstract: No abstract text available
Text: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower
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APT30GS60BRDL
100kHz,
O-247
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Untitled
Abstract: No abstract text available
Text: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower
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APT30GS60BRDL
100kHz,
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INT-944
Abstract: Equivalent transistors for IRGPC50U IRF 949 AN983 all transistor IRF 310 INT-990 irgbc20u Similar 7A, 100v fast recovery diode LOW FORWARD VOLTAGE DROP DIODE RECTIFIER mosfet 10a 600v
Text: AN-983 v.Int IGBT Characteristics (HEXFET is a trademark of International Rectifier) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit Conduction characteristics and “switchback” Switching characteristics
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AN-983
1000C,
INT-944
Equivalent transistors for IRGPC50U
IRF 949
AN983
all transistor IRF 310
INT-990
irgbc20u Similar
7A, 100v fast recovery diode
LOW FORWARD VOLTAGE DROP DIODE RECTIFIER
mosfet 10a 600v
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