IFN Search Results

RFMX-1

Abstract: rf-mx1
Contextual Info: RFMX1015 RFMX1015Differential IF Down-Converter 1500 MHz to 2200MHz DIFFERENTIAL IF DOWN-CONVERTER 1500MHZ TO 2200MHZ GND NC 19 IFP 20 IFN IF BIAS Package: MCM, 20-Pin, 5.2mmx5.2mm 18 17 16 Features      14 NC GND 3 13 GND GND 4 12 GND GND 5

1N4002 smd type

Abstract: HS-509 1N4002 smd 5962-95694 GDIP1-T16 HS-0548RH HS-0549RH CDIP2-T16 MKT .1K
Contextual Info: HS-0548RH, HS-0549RH TM Data Sheet August 2001 Radiation Hardened Single 8/Differential 4 Channel CMOS Analog Multiplexers with Active Overvoltage Protection tle 8R S9R iadle ifn4 nOS ti- The HS-0548RH and HS-0549RH are radiation hardened analog multiplexers with Active Overvoltage Protection and

Contextual Info: B 47 9 -9 7 IFN5911, IFN5912 N-CHANNEL DUAL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25eC icicpe * u « n r a . » n m .-n -n r.n -. . . Continuous Forward Gate Current Continuous Device Power Dissipation • WIDEBAND DIFFERENTIAL AMPLIFIERS

Contextual Info: B 48 9 -9 7 IFN6449, IFN6450 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR HIGH VOLTAGE Absolute maximum ratings at T* = 25°C IFN6449 Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation

IFN147

Contextual Info: E6 9-97 IFN147 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25°C • LOW NOISE AUDIO AMPLIFIER • Equivalent to Japanese 2SK147 Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current 10 mA

Contextual Info: 9 -9 7 B 45 IFN5432, IFN5433, IFN5434 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25°C • ANALOG LOW ON RESISTANCE SWITCHES • CHOPPERS FN5432 At 25°C free air temperature: Stade Electrical Characteristics Gate Source Breakdown Voltage

HSK-E 6000

Abstract: skv 1/2b 6000/5400 HSK E 14000/6300 HSK-E 2500 E3500 B6000
Contextual Info: Section 10: High Voltage Rectifiers VRRM V V BR VVRMS Types V IFAV IFAV IFN VF Tamb Toil Tamb I =1A F =45°C =75°C =45°C A A A V V N Rthja High Voltage Rectifiers < 50 kV °C/W HSK E SKV 1⁄2 B 6 000 7 500 2 500 HSK E 2500/1100-0,3 8 000 10 000 3 500 HSK E 3500/1550-0,3

HEF4511BP

Abstract: U CD4511B MSM4511 UPD4511BAC CD4511B 4511B HCC4511B HEF4511 HD14511B M4511BAP
Contextual Info: 155 - 451 1B B C D to 7 Segm ent L a tch Decoder/Driver umm m A* ft* BCD 7-fe^ y h 3 X f- b 4 L mm • x á m it » a f f i * v+ v-r m VDD 5V t r 10V 15V m-ifn-y S3 tf • * v - H - n t y » L E D £ B $ * tK -S I> . # A * t 5 'y + * m S ilT ij9 , LED axfTl-v?

RFMX-2

Abstract: Emerson 142-0741-851
Contextual Info: RFMX2015 RFMX2015Differential IF Down-Converter 2300 MHz to 2700MHz DIFFERENTIAL IF DOWN-CONVERTER 2300MHZ TO 2700MHZ Features       IFN IFP GND NC 17 16 NC 1 15 NC RFIN 2 14 NC GND 3 13 GND GND 4 12 GND GND 5 11 LO 7 8 9 10 GND 6 NC Applications

Semikron sk 20

Contextual Info: 15E D | SEMIKRON INC fll3tb?L 0001003 a | -T-z.3. o s SEMIKRON Section 10: High Voltage Rectifiers Ifav Ifav Ifn VF N Rthja Tamb Ton Tamb If = 1A =45°C =75°C = 45°C A A A V °c /w VflRM V BR VvBMS Types V V V 6000 7500 2500 H SK E 2500/1100-0,3 8000 10000 3500 H SK E 3500/1550-0,3

Contextual Info: c D -ifn n c c R ic c HIGH-PERFORMANCE 48-MACROCELL ONE-TIME PROGRAMMABLE LOGIC DEVICES S R E S 003-D 3880, NOVEMBER 1991 FN PACKAGE User-Configurable LSI Circuit Capable of Implementing 2100 Equivalent Gates of Conventional and Custom Logic TOP VIEW High-Performance CMOS Process Allows:

Contextual Info: STEVAL-IFN004V1 BLDC six-step motor driver based on the L6230 and STM8S105 Features • Input range: 8 V up to 48 V up to 35 W ■ STMicroelectronics’ STM8S105 8-bit microcontroller ■ DMOS fully integrated three-phase motor driver L6230 in a QFN package

F10V25

Abstract: mosfet stk 2SK1393 TO-220-4
Contextual Info: LVXvU -X /\° 7 —MOSFET LVX S e rie s P o w e r M O S FE T 2SK1393 o u t l in e d im e n s io n s [F10V25] 250V 10A • A i Ä Ciss !g ic ifn ;w ;p ;* B A 2 ® « tf'J \£ U o •X'f 'y^y-y-P-lA f f i S U V m it • 3 c 8 S M « S •thlJsäf, S J M is 5 l? ® D C /D C I)V A -5

Contextual Info: Product data sheet 5SM3656-6 RES.CURRENT OP.CIRCUIT BREAKER TYPE A PSE/SSF 63A 3+N-POL IFN 300MA 500V 4MW Similar to image Technical data: Design type instanteneous Type, explanations RCCBs, type A, instantaneous, special function Type, explanations / additionally

5SM3646-6KL

Abstract: Explanations
Contextual Info: Product data sheet 5SM3646-6KL RES.CURRENT OP.CIRCUIT BREAKER TYPE A PSE/SSF, N-LEFT 63A 3+N-POL IFN 300MA 400V 4MW Similar to image Technical data: Design type instanteneous Type, explanations RCCBs, type A, instantaneous Type, explanations / additionally

5SM3644-4

Contextual Info: Product data sheet 5SM3644-4 RES.CURR. OP.CIRC. BR. SIQUENCE TYPE B SENS. TO. UNIV. CURRENT 40A 3+N-POL IFN 300MA 400V 4MW SHORT-TIME DELAYED Similar to image Technical data: Design type short-time delayed Type, explanations SIQUENCE RCCBs, type B Super resistant

5SM3111-6

Abstract: 230-V CIRCUIT BREAKER siemens
Contextual Info: Product data sheet 5SM3111-6 RES.CURRENT OP.CIRCUIT BREAKER TYPE A PSE/SSF 16A 1+N-POL IFN 10MA 230V 2MW Similar to image Technical data: Design type instanteneous Type, explanations RCCBs, type A, instantaneous Type, explanations / additionally 1P+N; 125 till 230 V AC; 50 till 60 Hz

IFN6449

Abstract: IFN6450
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-48 B-48 01/99 IFN6449, IFN6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current

2SK105 Datasheet

Abstract: 2SK105 2SK59 to-226aa 2sk105 jfet 2SK40 TO226AA 2SK17 2SK113 2d201
Contextual Info: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions

IFN5433

Abstract: IFN5432 IFN5434 c705
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-45 B-45 01/99 IFN5432, IFN5433, IFN5434 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Analog Low On Resistance Switches ¥ Choppers IFN5432 At 25°C free air temperature: Static Electrical Characteristics

2SD1767

Contextual Info: 2SD1767 N ~7> V 7. £ /Transistors O O Q 4 I t f ^ d r v 7 7 ; u y u - ^ N # w f P N Epitaxial Planar NPN Silicon Transistor f i ^ j 5 S ^ l i ,H ffl/L o w Freq. Power Amp. • « * 1) = l U ? * j a £ , PC= 2 W T 'S - 5 40 X 4 0 X 0.7mm Hz 5 5 y ? S H 3 ifN i) o

stlf50

Abstract: CON34A CON14A 74hcf morocco p3 J207 J200 J201 J210 VN340
Contextual Info: STEVAL-IFN001V2 Low cost starter development kit based on ST10F276Z5, oriented to multi-axis motion control Data Brief Features • RS232 ■ RS485 ■ 2 CAN ■ I2C 3.3 V and 5 V ■ MC connector ■ 3 powerSPIN connectors ■ VN808 board connector Description

IFN424

Abstract: IFN425 IFN426 transistor B42 electrometers
Contextual Info: Databook.fxp 1/14/99 12:22 PM Page B-42 B-42 01/99 IFN424, IFN425, IFN426 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Very High Impedance Differential Amplifiers ¥ Electrometers Device Dissapation Derate 3.2 mW/°C to 50°C

2sk152 equivalent

Abstract: 2SJ44 2SK113 2SK152
Contextual Info: _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Process Unit Limit V M in Parameters