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    PanJit Semiconductor

    PanJit Semiconductor 10IF1-2A7002-02R

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    Bristol Electronics 10IF1-2A7002-02R 3,000
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    IF12A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: product P -P W A M M F I r LMAlNINtL F M W A M f 'f M iT M T I tN M A N L tM tN -100V. -12A, o.3n SDF9130 SDF9130 JAA JAB M H C M U b FEATURES • RUGGED PACKAGE • H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS


    OCR Scan
    -100vif--12a PDF

    Contextual Info: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


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    skb06n60hsk06n60hsp-to-220-3-45 PDF

    Contextual Info: SKB06N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


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    skb06n60hso-263abq67040-s4544p-to-263-3-2+1aug-02 PDF

    pal to ntsc rf vidio converter

    Abstract: AD9878 LC1210
    Contextual Info: Mixed-Signal Front End for Broadband Applications AD9878 FEATURES Low cost 3.3 V CMOS MxFE for broadband applications DOCSIS, EURO-DOCSIS, DVB, DAVIC compliant 232 MHz quadrature digital upconverter 12-bit direct IF DAC TxDAC+™ Up to 65 MHz carrier frequency DDS


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    ad987812-bit10-bitad8321/ad8323+7ad8322/ad8327ad9878bstad9878bstrl100-lqfpst-100pal to ntsc rf vidio converterlc1210 PDF

    AD8238

    Abstract: LC1210 INTERPOLATOR SIN COS spi if8 capacitor AD9878
    Contextual Info: Mixed-Signal Front End for Broadband Applications AD9878 FUNCTIONAL BLOCK DIAGRAM FEATURES APPLICATIONS I Tx TxID[5:0] Q SINC–1 16 12 DAC Tx DDS Σ -∆ SDIO Σ-∆ OUTPUT 3 4 CA PORT CONTROL REGISTERS MCLK PLL IF10[4:0] 10 MUX OSCIN IF10 INPUT ADC 12 ADC


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    ad9878if12bif12a12-bit+10ms-026bed100-leadst-100ad9878bstad9878bstz1ad9878-ebad8238lc1210interpolator sin cos spiif8 capacitor PDF

    LC1210

    Contextual Info: Mixed-Signal Front End for Broadband Applications AD9878 FUNCTIONAL BLOCK DIAGRAM FEATURES APPLICATIONS I Tx TxID[5:0] Q SINC–1 16 12 DAC Tx DDS Σ -∆ SDIO Σ-∆ OUTPUT 3 4 CA PORT CONTROL REGISTERS MCLK PLL IF10[4:0] 10 MUX OSCIN IF10 INPUT ADC 12 ADC


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    ad9878if12bif12a12-bit+7ms-026bed100-leadst-100ad9878bstad9878bstz1ad9878-eblc1210 PDF

    K06N60

    Abstract: k06n60hs 25E-4 PG-TO-263-3-2 SKB06N60HS
    Contextual Info: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


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    skb06n60hspg-to-263-3-2k06n60hsk06n60+125e-4 PDF

    IF10B

    Abstract: ADC12A RX12B AD9878 AGND10 ADC12B 9877 sigma sport
    Contextual Info: a Preliminary FEATURES Low Cost 3.3V-CMOS MxFE for DOCSIS, EURO-DOCSIS, DVB, DAVIC Compliant Set-Top Box and Cable Modem Applications 232 MHz Quadrature Digital Upconverter 12-B it D irect IF D /A C onverter TxD A C + Up to 65 MHz Carrier Frequency DDS


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    12-bit10-bitad8321/ad8323ad8322/ad8327+10ad9878ad8327ad8322if10badc12arx12bagnd10adc12b9877sigma sport PDF

    Contextual Info: ^ ¡ » lit r o n UFA? dev ,E E S . _ PRODUCT N-CHANNEL ENHANCEMENT MOS FET 900V, 12A , 0 .9 Q ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-source Vo 1t . 1) Drai n-Gate Vo 1tage ( R g s » 1 . 0 M ci ) (1) Gate-Source Voltage Con t inuous


    OCR Scan
    sdf12n90if-12a PDF

    Contextual Info: PRODUCT P-CHANNEL ENHANCEMENT MOS FET 100V.-12A, 0.3Q SDF9130 SDF9130 JAA JAB FEATURES • RUGGED PACKAGE • H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • LOW IR LOSSES • LOW THERMAL RESISTANCE


    OCR Scan
    sdf9130mil-s-19500if--12a03bfibd2 PDF

    Contextual Info: J H l t r o n -PRODUCT DEVICES.INC. ¡177 BLUE H E R O N BLVD. • RIVIERA BEACH, FLORIDA 33404 ^ E L : 407 848-4311 • TLX: 5 1 - 3 4 3 5 « F A X : (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 1000V, SYMBOL UNITS Drain-source Vo 1 f .( 1 )


    OCR Scan
    if-12amil-s-19500 PDF

    Contextual Info: SKB06N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


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    skb06n60hsk06n60hsp-to-263-3-2q67040s4544+1o-263ab PDF

    K06N60

    Contextual Info: SKB06N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    skb06n60hsk06n60hsp-to-220-3-45k06n60 PDF

    25E-4

    Abstract: SKB06N60HS
    Contextual Info: SKB06N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    skb06n60hsp-to-263-3-2o-263abq67040-s4544+2oct-0225e-4 PDF