IDT71V4 Search Results

Contextual Info: J d t 3.3V CMOS STATIC RAM 4 MEG 512K X 8-BIT) ADVANCE r o V424S IDT71V424L I n t e g r a t e d D e i/ ic e T e c h n o l o g y , I n c . FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise

Contextual Info: HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT IDT71V321S/L IDT71V421S/L I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • H igh-speed access — Industrial: 25ns max. — C om m ercial: 25/35/55ns (max.) • Low -power operation

71V424

Abstract: 71V424S15 IDT71V424 512K x 8 bit Low Power CMOS Static RAM
Contextual Info: ADVANCE INFORMATION IDT71V424 3.3V CMOS STATIC RAM 4 MEG 512K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times

6116 CMOS RAM

Abstract: 6116 static RAM chip 71V428 IDT71V428 IDT71V428L IDT71V428S
Contextual Info: IDT71V428S IDT71V428L 3.3V CMOS Static RAM 4 Meg 1M x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 1M x 4 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise Equal access and cycle times — Commercial and Industrial: 10/12/15ns

INTEGRATED DEVICE TECHNOLOGY 71V432

Contextual Info: 32K x 32 CacheRAM 3.3V Synchronous SRAM Burst Counter Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V432 processor interfaces. The pipelined burst architecture provides costeffective 3-1-1-1 secondary cache performance for processors up to

Contextual Info: 3.3V CMOS STATIC RAM 4 MEG 1Mx 4-BIT Integrated Device Technology, Inc. ADVANCE INFORMATION IDT71V428S IDT71V428L FEATURES: DESCRIPTION: • 1M x 4 advanced high-speed C M O S Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times

Contextual Info: 3 .3 V C M O S S T A TIC R A M 1 dt 4 M E G 5 1 2K X 8 -B IT ) ADVANCE '^ D T /m S s IDT71V424L Integrated De vice Technology, Inc. FEATURES: • 512K x 8 advanced high-speed C M O S Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times

IDT71V416

Abstract: IDT71V416L IDT71V416S SO44-2
Contextual Info: PRELIMINARY IDT71V416S IDT71V416L 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT Integrated Device Technology, Inc. FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center Power /GND pinout for reduced noise. • Equal access and cycle times

T71V416

Contextual Info: 3.3V CMOS STATIC RAM 4 MEG 256Kx 16-BIT ADVANCE INFORMATION IDT71V416 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center Power /GND pinout for reduced noise • Equal access and cycle times

IDT71V433

Contextual Info: PRELIMINARY 32K x 32, 3.3V SYNCHRONOUS IDT71V433 SRAM WITH FLOW-THROUGH OUTPUTS BURST COUNTER, SINGLE CYCLE DESELECT Integrated Device Technology, Inc. FEATURES: • 32K x 32 memory configuration • Supports high performance system speed - up to 60 MHz 10 ns Clock-to-Data Access

IDT71V416

Abstract: IDT71V416L IDT71V416S 71V416L
Contextual Info: 3.3V CMOS Static RAM 4 Meg 256K x 16-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V416S IDT71V416L The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability

IDT71V424

Abstract: SR-0402-02
Contextual Info: 3.3V CMOS Static RAM 4 Meg 512K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V424S/YS IDT71V424L/YL Description 512K x 8 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise Equal access and cycle times — Commercial and Industrial: 10/12/15ns

IDT71V433

Abstract: pin diagram for core i3 processor
Contextual Info: 32K x 32 3.3V Synchronous SRAM Flow-Through Outputs IDT71V433 Features ◆ ◆ ◆ ◆ ◆ ◆ 32K x 32 memory configuration Supports high performance system speed: Commercial and Industrial: — 11 11ns Clock-to-Data Access 50MHz — 12 12ns Clock-to-Data Access (50MHz)

IDT71V424

Abstract: 71V424
Contextual Info: IDT71V424YS IDT71V424YL 3.3V CMOS Static RAM 4 Meg 512K x 8-Bit Features Description ◆ The IDT71V424 is a 4,194,304-bit high-speed Static RAM organized as 512K x 8. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for highspeed memory needs.

Contextual Info: 3.3V CMOS Static RAM 4 Meg 256K x 16-Bit Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V416S IDT71V416L The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability

Contextual Info: 3.3V CMOS STATIC RAM 4 MEG 1Mx 4-BIT ADVANCE INFORMATION IDT71V428 Integrated Device Technology, inc. FEATURES: DESCRIPTION: • 1M x 4 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times

IDT71V424

Abstract: IDT71V424L IDT71V424S PH44 71V424
Contextual Info: ADVANCE INFORMATION IDT71V424S IDT71V424L 3.3V CMOS STATIC RAM 4 MEG 512K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times

power supply PK100

Abstract: IDT71V433
Contextual Info: IDT71V433 32K x 32 3.3V Synchronous SRAM Flow-Through Outputs Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ 32K x 32 memory configuration Supports high performance system speed — up to 50 MHz 11 ns Clock-to-Data Access LBO input selects interleaved or linear burst mode

IDT71V432

Contextual Info: 32K x 32 CacheRAM™ 3.3V Synchronous SRAM Burst Counter Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V432 The IDT71V432 CacheRAM contains write, data, address, and control registers. Internal logic allows the CacheRAM to generate a self-timed write based upon a decision which can be left until the

IDT71V432

Contextual Info: PRELIMINARY 32K x 32 CacheRAM IDT71V432 3.3V SYNCHRONOUS SRAM WITH BURST COUNTER, SINGLE CYCLE DESELECT Integrated Device Technology, Inc. FEATURES: • 32K x 32 memory configuration • Supports high performance system speed - 100 MHz 5ns Clock-to-Data Access in Pipelined Mode

Contextual Info: 32K X 32, 3.3V SYNCHRONOUS SRAM WITH FLOW-THROUGH OUTPUTS PRELIMINARY IDT71V433 Integrated Device Technology, Inc. FEATURES: • • • • • • • 32K x 32 m em ory configuration Supports high perform ance system speed - up to 50 MHz 11 ns C lock-to-D ata Access

Contextual Info: :¡0SSss» dt) I n te g r a te d D 32K x 32 CacheRAM PRELIMINARY 3.3V SYNCHRONOUS SRAM WITH IDT71V432 BURST COUNTER, SINGLE CYCLE DESELECT / iz e T e c h n o lo g y , l i e . FEATURES: • 32K x 32 m em ory configuration • Supports high perform ance system speed -1 0 0 MHz

IDT71V432

Abstract: MT58LC32K32D7LG-XX
Contextual Info: 32K x 32 CacheRAM 3.3V Synchronous SRAM Burst Counter Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V432 processor interfaces. The pipelined burst architecture provides costeffective 3-1-1-1 secondary cache performance for processors up to

IDT71V321

Contextual Info: HIGH SPEED 3.3V 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS IDT71V321S/L IDT71V421S/L Features ◆ ◆ ◆ ◆ ◆ High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation – IDT71V321/IDT71V421S — Active: 325mW (typ.)