IDS 2560 Search Results

MOSFET TOSHIBA 2015

Contextual Info: TOSHIBA Discrete Devices RF Power MOSFET 2SK3476 Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 4.8V, 4.8V, 6.0V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~ 2.2V 0.05V Step

mmic e3

Abstract: AE364
Contextual Info: E-pHEMT MMIC AE364 Product Features Application • 30 ~ 6000MHz • GaAs E-pHEMT MMIC • Higher linearity • Low Noise Figure • High Max input power • SOT-89 SMD Type package • Higher productivity • Lower manufacturing cost • Pb Free / RoHS Standard

RESISTOR SMD 2020

Abstract: ids 2560 mmic e3 wifi amplifier circuit
Contextual Info: E-pHEMT MMIC Product Features AE362 Application 0B 1B • 30 ~ 6000MHz • GaAs E-pHEMT MMIC • Higher linearity • Low Noise Figure • High Max input power • SOT-89 SMD Type package • Higher productivity • Lower manufacturing cost • Pb Free / RoHS Standard

Contextual Info: CSD86360Q5D www.ti.com SLPS327 – SEPTEMBER 2012 Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • • • • • • The CSD86360Q5D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high

Contextual Info: CSD86360Q5D www.ti.com SLPS327 – SEPTEMBER 2012 Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • • • • • • The CSD86360Q5D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high

TGA4516

Abstract: ids 2560
Contextual Info: TGA4516 Ka Band 2W Power Amplifier Key Features • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI pHEMT Technology Chip Dimensions: 2.79 x 2.315 x 0.1 mm (0.110 x 0.091 x 0.004) in

Contextual Info: CSD86360Q5D www.ti.com SLPS327A – SEPTEMBER 2012 – REVISED MAY 2013 Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • • • • • • The CSD86360Q5D NexFET™ power block is an optimized design for synchronous buck applications

Contextual Info: CSD86360Q5D www.ti.com SLPS327A – SEPTEMBER 2012 – REVISED MAY 2013 Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • • • • • • The CSD86360Q5D NexFET™ power block is an optimized design for synchronous buck applications

Contextual Info: CSD86360Q5D www.ti.com SLPS327 – SEPTEMBER 2012 Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • • • • • • The CSD86360Q5D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high

TGA4516

Contextual Info: Advance Product Information December 2, 2004 Ka-Band 2W Power Amplifier TGA4516 Key Features • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology

Contextual Info: Advance Product Information February 10, 2006 Ka-Band 2W Power Amplifier TGA4516 Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology

ka band gaas fet Package

Abstract: TGA4516 ka-band amplifier AMC8515
Contextual Info: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:

Contextual Info: APT40SM120J APT40SM120J 1200V, 32A, 80mΩ Silicon Carbide Power MOSFET FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI/RFI • PFC and other boost converter • Low RDS on • Buck converter SO • Short Circuit Withstand Rated • Flyback

Silicon Carbide Power MOSFET

Abstract: microsemi
Contextual Info: APT40SM120B_S APT40SM120B APT40SM120S 1200V, 40A, 80mΩ Silicon Carbide Power MOSFET TO -24 FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI/RFI • PFC and other boost converter • Low Switching Energy • Buck converter • Low RDS on Temperature Coefficient For

AE384

Abstract: ids 2560 RESISTOR SMD 2020 mmic e3
Contextual Info: E-pHEMT MMIC AE384 Product Features Application • 30 ~ 6000MHz • GaAs E-pHEMT MMIC • Higher linearity • Low Noise Figure • High Max input power • SOT-89 SMD Type package • Higher productivity • Lower manufacturing cost • Pb Free / RoHS Standard

ids 2560

Abstract: SiCr 30X30 SiCr resistor
Contextual Info: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 3.0µm P-Well CMOS Process Standard Features ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters UTIX Stepper Single or double poly

resistor 1k

Abstract: ids 2560 CAPACITOR Titanium 30X30
Contextual Info: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 2.0µm P-Well CMOS Process Standard Features ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters UT1X Stepper Single or double poly

resistor 1K

Abstract: 30X30 70210
Contextual Info: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 2.0µm N-Well CMOS Process Standard Feature ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters UT1X Stepper Single or double poly

resistor 1k

Abstract: 30X30
Contextual Info: Submicron Fab: 71 Vista Montana • San Jose, CA 95134 TEL: 408 222-8888 • FAX: (408) 222-2707 Wafer Foundry Services 1.2µm CMOS Process Standard Features ❖ ❖ ❖ ❖ ❖ Standard Layout Rules and Process Parameters UT1X Stepper Single or double poly

Contextual Info: OVERVIEW Single Source Solutions… In Plastic Profile & History Flambeau, Inc. is a worldwide industry leader in thermoplastic manufacturing, specializing in both injection and blow molding. Flambeau possesses the largest array of proprietary stock products

Contextual Info: CO M PAN Y OF MODEL LPTJ3-2 Toroidal Inductor Surface Mount High Current Bifilar Wincing Cata 5 a 5 3 a 7 a 4. a 3 a 2 9 ia PA R A LLEL CONNECTED McaeiNu.'ncer nauctance atODC uH -.2 ^ •5 3 -2 -7 .2 •_3TJ3-2 - 1. - $ f 1 ti II II II II 1 _^ -3 -7 - 'J*T J3-2- .5

OMAP5430

Abstract: OMAP5432 MIPI CSI-2 Parallel bridge Toshiba eMMC 4.40 emmc pcb layout toshiba eMMC DS MIPI DPI CAMERA PARALLEL RGB TO MIPI CSI-2 TWL6041 emmc toshiba
Contextual Info: Version F EL I M Data Manual IN Multimedia Device Engineering Samples 2.0 AR OMAP5430 Public Version PR ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice.

hb56d25609

Contextual Info: HB56D25609A/B-85A/10A/12A 262,144-Word x 9-Bit High Density Dynamic RAM Module P in Name Pin No. 1 Vc c 16 2 CAS 17 Ag 3 DQo 18 NC 4 A« 19 5 A, 20 dq 6 D Q, 21 WE 7 A 2 22 V ss 8 A3 23 dq 9 V ss 24 NC 10 dq 11 a P in No. The HB56A25609 is a 256K x 9 dynamic RAM module, mounted

23721 texas instruments

Contextual Info: TPS2560 TPS2561 www.ti.com SLVS930 – DECEMBER 2009 DUAL CHANNEL PRECISION ADJUSTABLE CURRENT-LIMITED POWER SWITCHES Check for Samples: TPS2560 TPS2561 FEATURES 1 • • • • • • • • • • • • 2 Two separate current limiting channels Meets USB Current-Limiting Requirements