IDQ FREQ PRODUCTS Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm

60Ghz

Abstract: MGF0952P 211G idq042a
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm TYP. @f=2.15GHz,Pin=25Bm

0951P

Abstract: MGF0951P 60Ghz mitsubishi mgf
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm

4 pin 9v

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm TYP. @f=2.15GHz,Pin=25Bm

60Ghz

Abstract: MGF0915A a4013
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm

VD F1 SMD

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm

MGF0919A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm

Contextual Info: TGA2237-SM 0.03 – 2.5GHz 10W GaN Power Amplifier Applications • Commercial and military radar  Communications  Electronic Warfare QFN 5x5 mm 32L Product Features            Functional Block Diagram Frequency Range: 0.03 – 2.5GHz

Contextual Info: TGA2585 2.7 – 3.7GHz 18W GaN Power Amplifier Applications • Commercial and military radar Product Features Functional Block Diagram        Frequency Range: 2.7 – 3.7GHz PSAT: 42.8dBm at 28V PAE: 52% Small Signal Gain: 33dB Input Return Loss: >15dB

Contextual Info: TGA2583 2.7 – 3.7GHz 10W GaN Power Amplifier Applications • Commercial and military radar Product Features Functional Block Diagram        Frequency Range: 2.7 – 3.7GHz PSAT: 40.5dBm at 25V PAE: 54% Small Signal Gain: 33dB Input Return Loss: >18dB

Contextual Info: TGA2585 2.7 – 3.7GHz 18W GaN Power Amplifier Applications • Commercial and military radar Product Features Functional Block Diagram      Frequency Range: 2.7 – 3.7GHz PSAT: 42.8dBm at 28V PAE: 54% Small Signal Gain: 33dB Bias: VD = 25-32V CW or Pulsed , IDQ = 225mA, VG

MVB3030X103M2

Contextual Info: TGA2595 27.5 to 31GHz, 9W Power Amplifier Applications • Satellite Communications Product Features Functional Block Diagram • Frequency Range: 27.5 to 31 GHz • Pout @ Pin = 22 dBm: 39.5 dBm CW • PAE @ Pin = 22dBm: 24% CW • • • • • • 2 3 4

Contextual Info: TGA2597-SM 2 - 6 GHz GaN Driver Amplifier Applications • Commercial and Military Radar • Communications • Electronic Warfare EW Product Features • • • • • • • Functional Block Diagram Frequency Range: 2 - 6 GHz Small Signal Gain: > 24 dB

UGF09060F

Abstract: MRF9060 UGF09060 UGF09060P
Contextual Info: UGF09060 60W, 869-894MHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large signal amplifier applications in the frequency band 869-894MHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM,

Contextual Info: TGA2627-SM 6 - 12 GHz GaN Driver Amplifier Applications • • • Commercial and Military Radar Communications Electronic Warfare EW Product Features • • • • • • • • • • • Functional Block Diagram Frequency Range: 6 - 12 GHz Push-Pull Configuration

Contextual Info: TGA2598 6 – 12GHz 2W GaN Driver Amplifier Applications • Commercial and military radar  Communications  Electronic Warfare EW Product Features         Functional Block Diagram Frequency Range: 6 – 12GHz PSAT: >33dBm PAE: >31%

Contextual Info: T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Avionics • Wideband or narrowband ampliiers Product Features

UGF09060F

Abstract: Cree Microwave MRF9060 UGF09060 UGF09060P
Contextual Info: UGF09060 60W, 869-894MHz, 27V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large signal amplifier applications in the frequency band 869-894MHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM,

Contextual Info: TGA2237 0.03 – 2.5GHz 10W GaN Power Amplifier Applications • Commercial and military radar  Communications  Electronic Warfare Product Features            Functional Block Diagram Frequency Range: 0.03 – 2.5GHz

200w transistor amplifier circuit

Abstract: Cree Microwave UGF09200 UGF09200F IDQ Freq Products
Contextual Info: UGF09200 200W, 869-894MHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for industrial and commercial large-signal amplifier applications in the frequency band 869-894MHz. Rated with a minimum output power of 200W, it is ideal for CDMA / CDMA2000,

T1G4005528-FS

Abstract: C08BL242X-5UN-X0B 1078974 EAR99 RO3210 T1G4005528FS J546 CuMoCu VJ1206Y222KRA J-094
Contextual Info: T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Avionics • Wideband or narrowband amplifiers Product Features

T1G4005528-FS

Abstract: EAR99 RO3210
Contextual Info: T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Avionics • Wideband or narrowband amplifiers Product Features

Contextual Info: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 50.5 dBm Nominal PSAT at 3 GHz 70.5% Maximum PAE