ID12A Search Results
ID12A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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APT1201R2BFLL
Abstract: APT1201R2SFLL APT1201R2BFLLG 1400G
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APT1201R2BFLL APT1201R2SFLL O-247 O-247 APT1201R2BFLLG 1400G | |
APT10090BLL
Abstract: APT10090SLL
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APT10090BLL APT10090SLL O-247 O-247 APT10090BLL APT10090SLL | |
APT1201R2BFLL
Abstract: APT1201R2SFLL
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APT1201R2BFLL APT1201R2SFLL O-247 O-247 APT1201R2BFLL APT1201R2SFLL | |
2SK895Contextual Info: 2SK895 FIELD EFFECT TRANSISTOR_ SILICON N CHANNEL MOS TYPE TT-MOSn INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR D RIVE APPLICATIONS. • Low Drain-Source OH Resistance : Rd s (ON)=0 .38fi(Typ.) |
OCR Scan |
2SK895 300yA 2SK895 | |
APT10090BFLL
Abstract: APT10090SFLL
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APT10090BFLL APT10090SFLL O-247 APT10090BFLL APT10090SFLL | |
SDF460Contextual Info: Jolltron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS PET 500V, 21A , 0.27Q ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-source Volt. l Drain-Gate Vo 1tage (RGs=1.0Mn) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25 *C) Drain Current Pulsed(3) |
OCR Scan |
300nS, SDF460 MIL-S-19500 | |
Contextual Info: TOSHIBA DISCRETE/OPTO 4SE D TOSHIBA FIELD EFFEC T TRANSISTOR SILICON N C H A N N EL MOS T Y P E (tt - • CJ D C1 7 2 S G □□ITTÔÔ 4 «TO S M - YTFP453 MOSI) 'T 3A - ' l INDUSTRIAL APPLICATIONS Unit in Bin HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. |
OCR Scan |
YTFP453 IDSS-250u VDS-450V I0-25O H360V VGS-10V Ta-25Â IDR-12A dlQR/dt-100A/us | |
YTFP452Contextual Info: TOSHIBA DI SC RETE/OPTO 45E D TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - • TOTTBSQ OOlTTÛb □ ■TOSH Y T r P 1 - rt YTFP452 MOSI) T 1IPs ~\ 3 INDUSTRIAL APPLICATIONS Unit ln nm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. |
OCR Scan |
0017Tflb YTFP452 IDSS-250uA VDS-500V Ijj-250uA Te-25Â RGSm20kfi) Vddn210V VGS-10V Ta-25< YTFP452 | |
Contextual Info: t¡ T O S H I B A -CDISCRETE/OPTO> 9097250 TOSHIBA CDIS C R E T E /OPTO SEMICONDUCTOR dFI^gtosd 99D 16743 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 9 4 TECHNICAL DATA SILICON N CHANNEL MOS TYPE 7T-M0S I ) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. |
OCR Scan |
100nA 300uA 00A/ys | |
Contextual Info: APT10090BFLL APT10090SFLL 1000V 12A POWER MOS 7 FREDFET 0.950 BFLL TO -2 47 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering |
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APT10090BFLL APT10090SFLL O-247 | |
Contextual Info: PRODUCT CATÂLO' Æ lltron N -CHANNEL ENHANCEMENT MOS FET 500V, 24A, 0.25 Q SDF24N50 FEATURES • • • • • • • • GAF RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE |
OCR Scan |
SDF24N50 11age IF-24A fl3Lflti02 | |
Contextual Info: APT10090BLL APT10090SLL 1000V 12A 0.900Ω POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
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APT10090BLL APT10090SLL O-247 | |
APT1201R2BFLL
Abstract: DSA00757 APT1201
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APT1201R2BFLL APT1201R2SFLL O-247 DSA00757 APT1201 | |
APT10090BFLL
Abstract: APT10090SFLL
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APT10090BFLL APT10090SFLL O-247 O-247 APT10090BFLL APT10090SFLL | |
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APT10090BLL
Abstract: APT10090SLL JESD24
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APT10090BLL APT10090SLL O-247 APT10090BLL APT10090SLL JESD24 | |
APT1201R2BFLLContextual Info: APT1201R2BFLL G APT1201R2SFLL(G) 1200V 12A 1.25 Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) |
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APT1201R2BFLL APT1201R2SFLL O-247 O-247 | |
Contextual Info: PRODUCT Æ utTon CÁTALO' N-CHANNEL ENHANCEMENT MOS FET 50 0V, 24A, 0.25Q SDF24N50 GAF FEATURES • • • • • • • • SCHEMATIC GH D ra in -s ou rc e Vo 1t . 1 D r ai n- Ga te Voltage G GATE DRAIN 3 SO U R C E STANDARD BEND CONFIGURATIONS (1) Ga te - So ur ce Voltage |
OCR Scan |
SDF24N50 MIL-S-19500 di/dt-100A/ | |
Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt - YTFP453 MOSI INDUSTRIAL APPLICATIONS Unit ln nun HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1&9MAX. 0*i±ag DRIVE APPLICATIONS. iSL FEATURES: |
OCR Scan |
YTFP453 250uA Ta-25 20kft) Tc-25 VGS-10V ID-12A VDS-25V, ID-16A | |
DD 127 DContextual Info: APT10090BFLL APT10090SFLL 1000V 12A 0.900Ω R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
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APT10090BFLL APT10090SFLL O-247 DD 127 D | |
TRANSISTOR 1300 1bContextual Info: TO SH IB A D I S C R E T E / O P T O 45E ß • T C H T B S D DDlTTfib □ ■ T0S4 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - YTFP452 MOSI) T 1 INDUSTRIAL APPLICATIONS Unit ln HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR |
OCR Scan |
YTFP452 IDSS-250uA VDS-500V 250uA Ta-25Â IDR-12A 00A/us TRANSISTOR 1300 1b | |
Contextual Info: APT10090BLL APT10090SLL 1000V 12A 0.950 BLL POWER MOS 7 MOSFET TO -2 47 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering |
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APT10090BLL APT10090SLL O-247 |