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    APT1201 Datasheets (30)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    APT1201R2BFLL
    		Microsemi Power MOS 7 Low Loss FREDFET Original PDF 160.34KB 5
    APT1201R2BFLLG
    		Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 12A TO-247 Original PDF 5
    APT1201R2BLL
    		Advanced Power Technology POWER MOS 7 1200V 12A 1.200 Ohm Original PDF 70.95KB 2
    APT1201R2BLL
    		Advanced Power Technology Low loss, high voltage, N-Channel enhancement mode power MOSFET Original PDF 71KB 2
    APT1201R2SFLL
    		Microsemi Power MOS 7 Low Loss FREDFET Original PDF 160.34KB 5
    APT1201R2SLL
    		Advanced Power Technology Low loss, high voltage, N-Channel enhancement mode power MOSFET Original PDF 71KB 2
    APT1201R2SLL
    		Advanced Power Technology POWER MOS 7 1200V 12A 1.200 Ohm Original PDF 70.95KB 2
    APT1201R4BFLL
    		Microsemi Power MOS 7 Low Loss FREDFET Original PDF 122.98KB 4
    APT1201R4BFLLG
    		Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 9A TO-247 Original PDF 5
    APT1201R4BLL
    		Advanced Power Technology POWER MOS 7 1200V 9A 1.400 Ohm Original PDF 70.99KB 2
    APT1201R4BLL
    		Advanced Power Technology Low loss, high voltage, N-Channel enhancement mode power MOSFET Original PDF 66.89KB 4
    APT1201R4SFLL
    		Microsemi Power MOS 7 Low Loss FREDFET Original PDF 122.98KB 4
    APT1201R4SFLLG
    		Microchip Technology MOSFET N-CH 1200V 9A D3PAK Original PDF 251.81KB
    APT1201R4SLL
    		Advanced Power Technology POWER MOS 7 1200V 9A 1.400 Ohm Original PDF 70.99KB 2
    APT1201R4SLL
    		Advanced Power Technology Low loss, high voltage, N-Channel enhancement mode power MOSFET Original PDF 66.89KB 4
    APT1201R5BFVR
    		Unknown Power MOS V, 1200V 10A, MOS-FET N-Channel enhanced Original PDF 117.23KB 4
    APT1201R5BVFR
    		Microsemi Power MOS V FREDFET Original PDF 139.43KB 4
    APT1201R5BVFRG
    		Microchip Technology MOSFET N-CH 1200V 10A TO247 Original PDF 149.28KB
    APT1201R5BVR
    		Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF 64.88KB 4
    APT1201R5SFVR
    		Unknown Power MOS V, 1200V 10A, MOS-FET N-Channel enhanced Original PDF 117.23KB 4
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    APT1201 Price and Stock

    Microchip Technology Inc

    Microchip Technology Inc APT1201R6SVFRG

    Trans MOSFET N-CH 1.2KV 8A 3-Pin(2+Tab) D3PAK Tube
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    Microchip Technology Inc APT1201R6SVFRG Tube 28 Weeks
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    Microchip Technology Inc APT1201R4SFLLG

    Trans MOSFET N-CH 1.2KV 9A 3-Pin(2+Tab) D3PAK Tube
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    Master Electronics APT1201R4SFLLG
    • 1 $23.31
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    Onlinecomponents.com APT1201R4SFLLG
    • 1 $23.31
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    Richardson RFPD APT1201R4SFLLG 30
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    Microchip Technology Inc APT1201R5BVRG

    MOSFET (Metal Oxide) Transistor - N-Channel - 1200 V - 10A Continuous Drain (Id) @ 25°C - 1.5 Ohm @ 5A 10V - TO-247-3 Package - Through Hole.
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    Master Electronics APT1201R5BVRG
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    Microchip Technology Inc APT1201R5BVRG Tube 28 Weeks
    • 1 $35.87
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    Onlinecomponents.com APT1201R5BVRG
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    Microchip Technology Inc APT1201R2BLLG

    MOSFET (Metal Oxide) Transistor - N-Channel - 1200 V - 12A Continuous Drain (Id) @ 25°C - 1.2 Ohm @ 6A 10V - TO-247-3 Package - Through Hole.
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    Master Electronics APT1201R2BLLG
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    Microchip Technology Inc APT1201R2BLLG Tube 28 Weeks
    • 1 $26.90
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    Onlinecomponents.com APT1201R2BLLG
    • 1 -
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    Richardson RFPD APT1201R2BLLG 30
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    Vyrian APT1201R2BLLG 7,835
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    Microchip Technology Inc APT1201R4BFLLG

    Trans MOSFET N-CH 1.2KV 9A 3-Pin(3+Tab) TO-247 Tube
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    Master Electronics APT1201R4BFLLG
    • 1 $22.28
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    Avnet Americas APT1201R4BFLLG Tube 26 Weeks 30
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    Microchip Technology Inc APT1201R4BFLLG Tube 28 Weeks
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    Onlinecomponents.com APT1201R4BFLLG
    • 1 $22.28
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    Richardson RFPD APT1201R4BFLLG 30
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    Find more APT1201 price and stock on Findchips.com

    APT1201 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    APT1201R2BFLL

    Abstract: APT1201R2SFLL APT1201R2BFLLG 1400G
    Contextual Info: APT1201R2BFLL G APT1201R2SFLL(G) 1200V 12A 1.25 Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)


    Original     		apt1201r2bfllapt1201r2sfllo-247apt1201r2bfllg+11400g PDF

    Contextual Info: APT1201R5BVR ADVANCED W 7Æ P o w e r Te c h n o l o g y 1200V io a 1.500a POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		apt1201r5bvro-247mil-std-750o-247ad PDF

    APT1201R4BLL

    Abstract: APT1201R4SLL
    Contextual Info: APT1201R4BLL APT1201R4SLL 9A 1.400W 1200V POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		apt1201r4bllapt1201r4sllo-247 PDF

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Contextual Info: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		apt1201r6bvrapt1201r5bvrapt1001rbvrapt10086bvr+16apt8075bvrapt8065bvrapt8056bvrapt6040bvrapt6035bvrapt6030bvrnt 6600 gapt60m75jvrapt30m40jvrapt20m45bapt50m50jvrapt12080jvr130-131apt5014lvrapt5020bvfrapt40m70jvr PDF

    APT1201R2BFLL

    Abstract: APT1201R2SFLL
    Contextual Info: APT1201R2BFLL APT1201R2SFLL 1200V 12A 1.200Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		apt1201r2bfllapt1201r2sfllo-247 PDF

    APT1201R4BFLL

    Abstract: 05-07392 APT1201R4SFLL APT60D120B APT1201R4BFLLG
    Contextual Info: APT1201R4BFLL G APT1201R4SFLL(G) 1200V POWER MOS 7 R 9A 1.50 Ω FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)


    Original     		apt1201r4bfllapt1201r4sfllo-24705-07392+2apt60d120bapt1201r4bfllg PDF

    APT1201R2

    Contextual Info: APT1201R2BLL APT1201R2SLL 1200V 12A 1.200Ω R POWER MOS 7 MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		apt1201r2bllapt1201r2sllo-247apt1201r2 PDF

    APT1201R6BVR

    Contextual Info: APT1201R6BVR 8A 1.600Ω 1200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		apt1201r6bvro-247 PDF

    TC 7107

    Contextual Info: APT1201R2BLL APT1201R2SLL 1200V 12A 1.200W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		apt1201r2bllapt1201r2sllo-247tc 7107 PDF

    Contextual Info: APT1201R5BVFR APT1201R5SVFR 1.500Ω Ω 1200V 10A POWER MOS V TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		apt1201r5bvfrapt1201r5svfro-247 PDF

    TC 7107

    Abstract: IL 7107 N APT1201R2BLL APT1201R2SLL
    Contextual Info: APT1201R2BLL APT1201R2SLL 1200V 12A 1.200W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		apt1201r2bllapt1201r2sllo-247tc 7107+1il 7107 n PDF

    APT1201R6BVR

    Abstract: APT1201R6SVR
    Contextual Info: APT1201R6BVR APT1201R6SVR 1200V 8A 1.600Ω Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		apt1201r6bvrapt1201r6svro-247apt1201r6bvr/svr PDF

    APT1201R4BFLL

    Abstract: APT1201R4SFLL 05-07392
    Contextual Info: APT1201R4BFLL APT1201R4SFLL 1200V POWER MOS 7 R 9A 1.400Ω FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		apt1201r4bfllapt1201r4sfllo-24705-07392 PDF

    APT1201R6BVFR

    Abstract: APT1201R6SVFR
    Contextual Info: APT1201R6BVFR APT1201R6SVFR 1200V POWER MOS V FREDFET 8A 1.600Ω BVFR TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		apt1201r6bvfrapt1201r6svfro-247100ms PDF

    APT1201R2BFLL

    Abstract: DSA00757 APT1201
    Contextual Info: APT1201R2BFLL APT1201R2SFLL 1200V 12A 1.200Ω POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		apt1201r2bfllapt1201r2sfllo-247dsa00757+1apt1201 PDF

    Contextual Info: APT1201R6BVR APT1201R6SVR 1200V 8A 1.600Ω Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		apt1201r6bvrapt1201r6svro-247apt1201r6bvr/svr+1dr065 PDF

    Contextual Info: APT1201R4BLL APT1201R4SLL 9A 1.400W 1200V R POWER MOS 7 MOSFET BLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		apt1201r4bllapt1201r4sllo-247 PDF

    Contextual Info: APT1201R5BVR 1200V 10A 1.500Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		apt1201r5bvro-24730to-source PDF

    APT1201R5BFVR

    Abstract: APT1201R5BVFR APT1201R5SFVR
    Contextual Info: APT1201R5BFVR APT1201R5SFVR 1.500Ω Ω 1200V 10A POWER MOS V TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		apt1201r5bfvrapt1201r5sfvro-247apt1201r5bvfr PDF

    APT1201R2BFLL

    Contextual Info: APT1201R2BFLL G APT1201R2SFLL(G) 1200V 12A 1.25 Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)


    Original     		apt1201r2bfllapt1201r2sfllo-247 PDF

    Contextual Info: APT1201R4BFLL G APT1201R4SFLL(G) 1200V POWER MOS 7 R 9A 1.50 Ω FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)


    Original     		apt1201r4bfllapt1201r4sfllo-247 PDF

    APT1201R6BVR

    Abstract: BAT 545
    Contextual Info: APT1201R6BVR 8A 1.600Ω 1200V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.


    Original     		apt1201r6bvro-247bat 545 PDF

    APT1201R4BFLL

    Abstract: APT1201R4SFLL APT60D120B 05-07392
    Contextual Info: APT1201R4BFLL APT1201R4SFLL 1200V POWER MOS 7 R 9A 1.400Ω FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		apt1201r4bfllapt1201r4sfllo-247apt60d120b+105-07392 PDF

    Contextual Info: APT1201R4BLL APT1201R4SLL 9A 1.400W 1200V POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		apt1201r4bllapt1201r4sllo-247 PDF