SDF460 Search Results
SDF460 Datasheets (12)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SDF460 | Solitron Devices | VDS (V) =, Id Continuous Tc=25C (A) = 21, Idm Pulsed (A) = 84, RDS (On) (Ohms) = 0... | Scan | 170.46KB | 1 | ||
| SDF460JEAD | Solitron Devices | N-CHANNEL ENHANCEMENT MOS FET | Scan | 170.45KB | 1 | ||
| SDF460JEAS | Solitron Devices | N-CHANNEL ENHANCEMENT MOS FET | Scan | 170.45KB | 1 | ||
| SDF460JEAU | Solitron Devices | N-CHANNEL ENHANCEMENT MOS FET | Scan | 170.45KB | 1 | ||
| SDF460JEBS | Solitron Devices | N-CHANNEL ENHANCEMENT MOS FET | Scan | 170.45KB | 1 | ||
| SDF460JEBU | Solitron Devices | N-CHANNEL ENHANCEMENT MOS FET | Scan | 170.45KB | 1 | ||
| SDF460JECD | Solitron Devices | N-CHANNEL ENHANCEMENT MOS FET | Scan | 170.45KB | 1 | ||
| SDF460JECS | Solitron Devices | N-CHANNEL ENHANCEMENT MOS FET | Scan | 170.45KB | 1 | ||
| SDF460JECU | Solitron Devices | N-CHANNEL ENHANCEMENT MOS FET | Scan | 170.45KB | 1 | ||
| SDF460JEDD | Solitron Devices | N-CHANNEL ENHANCEMENT MOS FET | Scan | 170.45KB | 1 | ||
| SDF460JEDS | Solitron Devices | N-CHANNEL ENHANCEMENT MOS FET | Scan | 170.45KB | 1 | ||
| SDF460JEDU | Solitron Devices | N-CHANNEL ENHANCEMENT MOS FET | Scan | 170.45KB | 1 |
SDF460 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SDF460JECSHU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)84 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55 |
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SDF460JECSHU1N | |
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Contextual Info: SDF460JECSHSN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)84 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55 |
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SDF460JECSHSN | |
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Contextual Info: SDF460JECSHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)84 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55 |
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SDF460JECSHD1N | |
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Contextual Info: SDF460JECVHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)84 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55 |
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SDF460JECVHD1N | |
SDF460Contextual Info: Jolltron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS PET 500V, 21A , 0.27Q ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-source Volt. l Drain-Gate Vo 1tage (RGs=1.0Mn) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25 *C) Drain Current Pulsed(3) |
OCR Scan |
300nS, SDF460 MIL-S-19500 | |
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Contextual Info: Æ iitro n ,- _ PRODUCT liz? 5b¥f SSÏÏsn'î’n'x"1?[E?Ì3ÌE.'S i:fì S ì ;a«” ”« 6 n - ch a n n el en h an cem en t m o s f e t 500 V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 1t .(1 VDSS Drain-Gate Vo 1tage VDGR (R g s -I.OM ci) (l) |
OCR Scan |
SDF460 5DF460 5DF460 i/dt-100A/ | |
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Contextual Info: U ntren PRODUCT DEVICES.INC. ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Drain-source Volt. l VDSS Drain-Gate Vo 1tage VDGR (Rcs-l.OMn) (l) Gate-Source Voltage VGS Cont inuous Drain Current Continuous ID (Tc = 25*C) Drain Current Pulsed(3) IDM PD Total Power Dissipation |
OCR Scan |
PARA25 IF-21A fib02 |