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    ICE20N170 Search Results

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    ICE20N170 Price and Stock

    IceMOS Technology

    IceMOS Technology ICE20N170

    Superjunction MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ICE20N170 Tube 50
    • 1 -
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    • 100 $2.51
    • 1000 $2.35
    • 10000 $2.15
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    IceMOS Technology ICE20N170B

    Superjunction MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ICE20N170B Tape & Reel 800
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    • 1000 $2.46
    • 10000 $1.94
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    IceMOS Technology ICE20N170FP

    Superjunction MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ICE20N170FP Tube 50
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    • 100 $2.47
    • 1000 $2.31
    • 10000 $2.12
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    ICE20N170 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: ICE20N170U Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE20N170U 250uA O-262 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00 PDF

    Contextual Info: ICE20N170 Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE20N170 250uA O-220 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 0E-00 PDF

    Contextual Info: ICE20N170FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE20N170FP 250uA O-220 0E-06 0E-04 0E-02 0E-00 PDF

    Contextual Info: ICE20N170B Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE20N170B 250uA O-263 100us 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 PDF

    Contextual Info: ICE20N170FP Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability


    Original     		ICE20N170FP 250uA O-220 100us 0E-06 0E-04 0E-02 0E-00 PDF