ICE20N170B Search Results
ICE20N170B Datasheets Context Search
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Contextual Info: ICE20N170B Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 20A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability |
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ice20n170b250uao-263100us+6 |