ICC05 Search Results

Contextual Info: G-7 ICC05 SERIES DIP TYPE IC SOCKET Dimensions for ICC05 Series 8,14,16,18,20,22pin Unit:mm(inch) C max. JAPAN No. of contacts Ref.E 16 KEL A max. B 2.54(0.100) Insulator Configuration 4.4 (0.173) 0.6 (0.024) 0.6 (0.024) 5.1 3.4 (0.134) (0.200) Ref.2.5 (0.098)

tc58v32ft

Abstract: TC58V32
Contextual Info: IN TEG RA TED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58V32 FT TO SHIBA TECHNICAL DATA SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58V32FT device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and

Contextual Info: TOSHIBA TC58V64FT/DC TENTATIVE T O S H IB A M O S D IG ITAL IN TEG RATED CIRCUIT SILICON GATE C M O S 2, 64-MBIT 8M X 8 BITS CMOS NAND E^PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND "E2PRQM) organized as 528 bytes X 16 pages X 1024 blocks.

NM29N16S

Abstract: C1996 ICC01 NM29N16 NM29N16R
Contextual Info: NM29N16 16 MBit 2M x 8 Bit CMOS NAND FLASH E2PROM General Description Features The NM29N16 is a 16 Mbit (2 Mbyte) NAND FLASH The device is organized as an array of 512 blocks each consisting of 16 pages Each page contains 264 bytes All commands and data are sent through eight I O pins To read

NM29N16ES

Abstract: C1996 ICC01 NM29N16E
Contextual Info: NM29N16E 16 MBit 2M x 8 Bit CMOS NAND FLASH E2PROM General Description Features The NM29N16E is a 16 Mbit (2 Mbyte) NAND FLASH which operates over the industrial (b40 C to a 85 C) temperature range The device is organized as an array of 512 blocks each consisting of 16 pages Each page contains 264 bytes

wf vqc 10 d a6

Abstract: TC58V32AFT tr-5-t
Contextual Info: T O S H IB A TC58V32AFT T O S H IB A M O S D IG ITAL IN TEG RATED CIRCUIT T E N T A T IV E SILICON GATE C M O S 32 M b it 4 M X 8 bit CM O S NAND E2PROM DESCRIPTION The TC58V 32 device is a sin g le volt 32 M (34,603,008) b it N A N D E lectrically Erasable and

toshiba NAND ID code

Contextual Info: TOSHIBA TC5832FT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E^PROM DESCRIPTION The TC5832FT device is a single 5.0-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.

SIC01

Abstract: "vlsi technology" on 5718 ICC05
Contextual Info: SIC01 SERIES 70mil 1.778mm SHRINK IC SOCKET SUMMARY As IC electronic packaging progresses towards further LSI/VLSI technology, KEL Corp. has met this challenge by developing a new 70mil Shrink IC socket. Kel has again incorporated a high reliability and quality

12v mic transistor amplifiers

Abstract: TA8155FN TA8155F
Contextual Info: TA8155F/FN TO SH IBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A 8 1 5 5 F , T A 8 1 5 5 F N REC/PB SYSTEM DUAL PRE-AMPLIFIER 1.5/3V USE The TA8155F and TA8155FN are REC/PB system dual pre amplifier ICs, which are developed for low voltage

Contextual Info: TC58V16BFT TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X

Contextual Info: TOSHIBA TENTATIVE TC5832FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E^PROM DESCRIPTION The TC5832FT device is a single 5.0-volt 33 M (34,603,008) bit N A N D Electrically Erasable and Programmable Read O nly Memory (N A N D E E P R O M ) organized as 528 byte X 16 pages X 512 blocks.

TC5816ADC

Contextual Info: IN TEG R A TED OSHIBA CIR CU IT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816 ADC SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only

ssfdc tc

Abstract: TC58V32ADC fDC22A a7611
Contextual Info: T O S H IB A TC58V32ADC TENTATIVE 3 2 M b it TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 4 M X 8 b it SILICON GATE CMOS C M O S N A N D E2 P R O M (4 M BYTE S m a r t M e d ia ) DESCRIPTION The TC58V32ADC device is a single 3.3 volt 32 M (34,603,008) bit NAND Electrically Erasable and

TC5832DC

Abstract: TC58V32ADC TC58V32AFT TC58V32DC
Contextual Info: TOSHIBA TENTATIVE TC58V3 2AFT/ADC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 Mbit 4 M x 8 bit CMOS NAND E2PROM DESCRIPTION The TC58V32AFT/ADC device is a single volt 32 M (34,603,008) b it NAND E lectrically E rasable and P rog ram m ab le Read O nly M emory (NAND EEPROM) organized as 528 bytes X 16 pages X 512 blocks.

eeprom toshiba L 510

Abstract: TC58V32FT
Contextual Info: TOSHIBA TENTATIVE TC58V32FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E^PROM DESCRIPTION The TC58V32FT device is a single volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.

swg 19

Abstract: condenser microphone 12v mic transistor amplifiers mic bias circuit TA8155F TA8155FN
Contextual Info: TOSHIBA TA8155F/FN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8155F, TA8155FN R EC /PB SYSTEM DUAL PRE-AMPLIFIER 1 . 5 / 3 V USE The TA8155F and TA8155FN are REC/PB system dual pre amplifier ICs, which are developed for low voltage operation (1.5/3V use). These are especially suitable for a

Contextual Info: T O S H IB A TC58V16BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 16 M b it 2 M SILICON GATE CMOS x 8 b it CMOS N A N D E2PROM (2M BYTE S m a rtM e d ia ) DESCRIPTION The TC58V16BDC device is a single 3.3 volt 16 M (17,301,504) bit NAND Electrically Erasable and

Contextual Info: National NM29N16 tß Semiconductor NM29N16 16 MBit 2M x 8 Bit CMOS NAND FLASH E2PROM General Description Features The NM29N16 is a 16 Mbit (2 Mbyte) NAND FLASH. The device is organized as an array of 512 blocks, each consist­ ing of 16 pages. Each page contains 264 bytes. All com­

chips 65554

Abstract: TSC-5 640x480x8bpp 05TM
Contextual Info: 17-1 •L nirb E l e c t r ic a l S p e c if ic a t io n s 1 7 E l e c t r ic a l S p e c if ic a t io n s Table 17-1: 65554 Absolute M aximum Conditions Symbol Pd Vcc V, Vo Parameter Power Dissipation package reliability limit Supply Voltage!" Input Voltage

microphone amplifier with alc

Abstract: 12v mic transistor amplifiers TA8155F TA8155FN
Contextual Info: TO SH IB A TA8155F/FN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8155F, TA8155FN REC/PB SYSTEM DUAL PRE-AMPLIFIER 1.5/3V USE The TA8155F and TA8155FN are REC /PB system dual pre amplifier ICs, which are developed for low voltage operation (1.5/3V use). These are especially suitable for a

Contextual Info: IN TEG RA TED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58V32 FT TO SHIBA TECHNICAL DATA SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58V32FT device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and

Contextual Info: TO SHIBA TH58V128FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 128 Mbit 16 M x 8 bit CMOS NAND E2PROM DESCRIPTION The TH58V128 device is a single 3.3 vo lt 128 M (138,412,032) b it N A N D E le ctrica lly Erasable and Program m able Read O nly Mem ory (N A N D E E P R O M ) organized as 528 bytes X 32 pages X 1024 blocks.

Contextual Info: TOSHIBA TENTATIVE TC5832DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 M BIT 4 M X 8 BITS CMOS NAND E^PROM DESCRIPTION The TC5832DC device is a single 5.0-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.