SIC01 Search Results

SIC01M-18

Contextual Info: SIC01M-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

uvc photodiode

Abstract: uv sensor SIC01M silicon carbide TO-39, UVC
Contextual Info: UVC-selective SiC based UV sensor SIC01M-C Features • UVC Photodiode with medium-sized photoactive area • Good compromise between signal strength and price • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294

SIC01S-HT

Abstract: silicon carbide UV photodiode
Contextual Info: Ultraviolet selective SiC based UV sensor SIC01S-HT Features • Operating Temperature up to 170°C • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness •

SIC01S-B18

Contextual Info: SIC01S-B18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01

Abstract: "vlsi technology" on 5718 ICC05
Contextual Info: SIC01 SERIES 70mil 1.778mm SHRINK IC SOCKET SUMMARY As IC electronic packaging progresses towards further LSI/VLSI technology, KEL Corp. has met this challenge by developing a new 70mil Shrink IC socket. Kel has again incorporated a high reliability and quality

uv flame sensor

Abstract: FLAME SENSOR UV ultraviolet sensor uv photodiode sic01m ultraviolet sensor flame cree Sic uv sensor Ultraviolet SIC01M
Contextual Info: Ultraviolet selective SiC based UV sensor SIC01M – LENS Features • Broad band UVA-UVB-UVC photodiode for weak and directed radiation • Perfectly suited for flame sensing • Silicon Carbide based chip for extreme low noise and dark current • Chip dimensions of 0.5 x 0.5 mm2 with 0.22 mm2 active area

TO-39, UVC

Abstract: SIC01L-5-C uvc photodiode uv sensor silicon carbide
Contextual Info: UVC-selective SiC based UV sensor SIC01L-5-C Features • UVC Photodiode with large photoactive area • Optimally suited for weak UVC intensities • Silicon Carbide based chip for extreme irradiation hardness • Spectral response in accordance with DVGW W 294

SIC01S-18ISO90

Abstract: SiC Photodiodes
Contextual Info: SIC01S-18ISO90 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC

SIC01L-5

Contextual Info: SIC01L-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01L-C5

Contextual Info: SIC01L-C5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

Contextual Info: SIC01D-B18 rev.6.1 04/15 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01M-5LENS

Contextual Info: SIC01M-5LENS V 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

uv photodiode SIC01L-18

Abstract: SIC01L-18 cree ultraviolet uv sensor
Contextual Info: Ultraviolet selective SiC based UV sensor SIC01L-18 Features • Broad band UVA-UVB-UVC photodiode in TO18 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material

SIC01S-C18

Contextual Info: SIC01S-C18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01S-18

Contextual Info: SIC01S-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01XL-5

Contextual Info: SIC01XL-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

ultraviolet sensors

Abstract: uv sensor ultraviolet sensor uvb sensor
Contextual Info: Ultraviolet selective SiC based UV sensor SIC01S Features • • • • • • Silicon Carbide based chip for extreme irradiation hardness Intrinsic visible blindness due to wide-bandgap semiconductor material TO-18 metal package with 0,054 mm2 active chip area

uv sensor

Abstract: SIC01L-5 SUN SENSOR silicon carbide
Contextual Info: Ultraviolet selective SiC based UV sensor SIC01L-5 Features • Broad band UVA-UVB-UVC photodiode in TO5 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material

Contextual Info: ROITHNER LASERTECHNIK PRESENTS. NEW HIGH POWER UV-LED NS375L-ERLM UV-LED, peak wavelength 375 nm - 380 nm, 19.0 - 26.0 mW at 20 mA, clear 5 mm UV resistant epoxy forward voltage typ. 3.6 V, FWHM typ. 15 nm sample price: EUR 10.86 get datasheet price list page 37

MSM 7225

Abstract: MOLEX 10PIN SD CARD TT 2146 female PCB connector 9pin d-sub 15PIN D-SUB CONNECTORS 68pin TO 50 PIN SCSI connector 50 pin (2x25), 2mm pitch header connectors 50PIN D-SUB CONNECTORS jst phr-6 68pin SCSI connector
Contextual Info: AUK Complete Cross Reference Competitor Part No. SLM-132-01-G-S SAMTEC SLM-140-01-G-S SAMTEC SLM-150-01-G-S SAMTEC SLM-103-01-G-S SAMTEC SLM-104-01-G-S SAMTEC SLM-106-01-G-S SAMTEC SLM-122-01-G-S SAMTEC SLM-104-01-G-D SAMTEC SLM-105-01-G-D SAMTEC SLM-106-01-G-D SAMTEC

smd diode UJ 64 A

Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
Contextual Info: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.