YTS2222A
Abstract: transistor marking 1p Z
Contextual Info: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage
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500mayts2222a300mhzyts2907a+3ta-25150matransistor marking 1p z
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MM4048
Abstract: BC406 L17D D29A10 D29A12 D29A7 D29A8 D29A9 MA7809 SA2255
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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/at-10uv/degsa2720sa2721sa2722+13sa2723sa2724/at-10uv/deamm4048bc406l17dd29a10d29a12d29a7d29a8d29a9ma7809sa2255
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TIL78
Abstract: til78 phototransistor L44A BFX82 K1504 MT101B P1028 phototransistor OCP71 transistor k1502
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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til78til78 phototransistorl44abfx82+5k1504mt101bp1028phototransistor ocp71transistor k1502
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TIL78
Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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npn110fab-100mcbvcb0-30vpc-125mw+13lc-10mafab-150mcfab-200mctil78sa2739phototransistor ocp71cm601jan2n491photo transistor til78til78 phototransistorcm602fpn100ft06
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2N4241
Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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npn11012x084b12x165vceo-15v+16hfe-30icbo-200mapa-300mwvceo-55vhfe-100pt-25w2n4241oc74cm6012n4042bsv392n3523bc143bc222 transistorft06200s
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TIL78
Abstract: photo transistor til78 K1202 phototransistor OCP71 photo TIL78 til78 phototransistor 2n318 2SK19GR 2SK19Y C682A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C
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npn110fab-100mcbvcb0-30vpc-125mw+13lc-10mafab-150mcfab-200mctil78photo transistor til78k1202phototransistor ocp71photo til78til78 phototransistor2n3182sk19gr2sk19yc682a
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51t35
Abstract: J3E diode 5N 2MBI150LB-060 M221 J3E diode
Contextual Info: 2MBI1 50LB-060 15 oa IGBT ‘ Outline Drawings IGBT MODULE • Features • S & X 'f High Speed Switching • i&fS*n$t/± Low Saturation Voltage • B A f i t f — H & it(M O S - y — hfllia) • High Input Impedance Module Packaging •Applications = A
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50lb-06051t35j3e diode 5n2mbi150lb-060+2m221j3e diode
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KN2222S
Abstract: KN2222AS
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KN2222S/AS EPITAXIAL PLANAR NPN TRA N SISTO R GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current DIM : I c E x - 1 0 n A M a x . A B ; V c e = 6 0 V , V e b (o f f ) - 3 V .
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kn2222s/as150makn2907s/2907askn2222s+2kn2222as10x8x0
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TA550c
Abstract: 2N4033 2N3019 and applications TA-550C 2N5020 2N3019 2N3020 2N4031 550C
Contextual Info: 2N3019 2N 3020 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES ' * •\ • * ’ * V •’ , ¿: u \ r> r 1 ¿ 7 . j * * V / • •' ¿ r . .* i f ^ C M i ? > % - ' l,- - • , • • . i * Í ;•: i Í ■ sir4 : 1 1' ; : ; > * ?• K v y i : r ^ V ; y . ‘£
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2n30192n30202n50202n4033+92n4031ic-150ma150mavce-10v500mata550c2n3019 and applicationsta-550c550c
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2SB1025
Abstract: 2SB1026 2SD1419 2sb102
Contextual Info: HITACHI 2SB1026 SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1419 1. » a * 2. Coiiicior 3. limmer 4. Collector Flange "I (DiiMiiMom» in mill) (UPAK) MAXIMUM COLLECTOR DISSIPATION CURVE • A SSO LU T E MAXIMUM RATINGS (Ta=25°C)
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2sb10262sd14192sbi026-100v+7ic--150ma-500ma-50ma-l50ma-150ina2sb10252sb102
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MA7809
Abstract: 2S711 SA2713 L17D STL51 BC412 KIS434 NS435 NS436 NS437
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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/at-10uv/degsa2720sa2721sa2722+13sa2723sa2724/at-10uv/deama78092s711sa2713l17dstl51bc412kis434ns435ns436ns437
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BC138 TRANSISTOR
Abstract: 2N4043 ME2001 2N1020 2N3523 2N4042 2N4241 BC138 bc143 TLO 61
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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bc138 transistor2n4043me20012n1020+62n35232n40422n4241bc138bc143tlo 61
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TIL78
Abstract: photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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fab-100mcbvcb0-30vpc-125mwlc-10ma+13fab-150mcfab-200mcbvcbo-15vtil78photo transistor til 78photo transistor til78sk 110 19 20n2sc640 transistor2sc2862sc2872sc430400mpmt222
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TIL78
Abstract: photo transistor til78 TIL78 em
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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til78photo transistor til78til78 em |
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transistor KN2222A
Abstract: kn2222a KN2222 Kn2222A transistor 2907A
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KN2222/A EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx-10nA M ax. ; V ce-60V , V eb(off)-3V. • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150mA, lB=15mA.
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kn2222/a150makn2907/2907akn2222+4kn2222atransistor kn2222akn2222a transistor2907a
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Contextual Info: SOT223 NPN SILICON PLANAR SW ITCHING TRANSISTOR FZT2222A ISSUE 3 - OCTOBER 1995 FEATURES * * 40 Volt V CE0 Fast switching C O M P L E M E N T A R Y TYPE P A R T M A R K IN G D ET A IL - FZT2907A FZT2222A ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L
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ot223fzt2907afzt2222a100mhz+2140kbz150ma
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BC138 TRANSISTOR
Abstract: 2N4241 BD117 2N4042 BC138 transistor bc138 BC222 TRANSISTOR 2N4043 2N5508 2N5511
Contextual Info: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12
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diff40v12x084b12x165vceo-15v+16hfe-30icbo-200mapa-300mwvceo-55vhfe-100pt-25wbc138 transistor2n4241bd1172n4042bc138transistor bc138bc222 transistor2n40432n55082n5511
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2N2906A
Abstract: 2N2221 2N2221A 2N2906 PN2221 PN2221A PN2906 PN2906A
Contextual Info: 2N PN 2906 2N2906A PN2906A í PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES CASE TO-18 CASE TO-92A CBE EBC 2N2906 2N2906A PN2906 PN2906A THE 2N2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM
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2n2q062n2906apn2906pn2906a+52n22212n2221apn2221pn2221a2n2906
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2n4401- 38
Abstract: 2N4401 EBC 2N4401 2N4400 2N4402 2N4403
Contextual Info: CASE T0-92A THE 2N4400, 2N4401 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N4402 AND 2N4405 RESPECTIVELY. EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage
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2n44012n44002n44022n4403+5t0-92a310mw150ma2n4401- 382n4401 ebc
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MA7809
Abstract: 2sc395 transistor L17D STE401
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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ma78092sc395 transistorl17dste401 |
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NS662
Abstract: L17D RT3500
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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ns662l17drt3500 |
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SA2713
Abstract: MA7809 MEM808 transistor k1502 RN1030A UC320 RN3020 L17D ML111B ML132A
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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npn110/at-10uv/degsa2720sa2721+14sa2722sa2723sa2724/at-10uv/deasa2713ma7809mem808transistor k1502rn1030auc320rn3020l17dml111bml132a
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L17D
Abstract: MA7809
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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l17dma7809 |
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Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS J Q Q J HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS. Unit in mm ELECTRICAL CHARACTERISTICS (Ta«25°C) CHARACTERISTIC TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector Cut-off Current
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vcb-200vvce-10vic-150maic-200ma+3-20mavcb-10v2sc3963
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