IC100A Search Results

QM100DY-H

Abstract: QM10
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM100DY-HK HIGH POWER SWITCHING USE _ INSULATED TYPE • • • • • f lc Collector current. 100A Vcex Collector-emitter voltage. 600V hFE DC current gain. 75

MG100H2CL1

Abstract: ic 741 free MG100H2CL
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100H2CL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-05,3±Ol5 FEATURES : . The Collector is Isolated from Case. . With Built-in Free Wheeling Diodes . High DC Current Gain : hFE= 80 Min. (Ic=100A)

dc motor control 100A

Abstract: A751 80-LI
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100H2YL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector :is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hyE=80 Min (Ic=100A) . Low Saturation Voltage

diodo 100a

Abstract: Mitsubishi transistor
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM100TX1-H HIGH POWER SWITCHING USE INSULATED TYPE OM100TX1-H • lc • V ce x • hFE Collector current . 100A Collector-emitter voltage. 600V DC current gain. 80 • Insulated Type

QM10

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM100E2Y/E3Y-HK HIGH POWER SWITCHING USE INSULATED TYPE QM100E2Y/E3Y-HK Collector current. 100A Collector-emitter voltage. 600V • hFE DC current gain. 75 • Insulated Type • UL Recognized

Contextual Info: Preliminary Data Sheet No. PD-9.939 International 1 ]Rectifier IRGKI0100M12 Fast IGBT "CHOPPER" INT-A-PAK™ MODULES VCE= 1200V *C DC “ 100A • Rugged Design • Simple gate-drive . Fast operation up to 10 kHz hard switching, or 50 kHz resonant .Switching-Loss Rating includes all "tail"

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

Contextual Info: TOSHIBA J {DISCRETE/OPTO} 9097250 TOSHIBA tfoiìììbu m D eT | T O T 75-50 9 0 D 16270 <DISCRETE/OPTO SEMICONDUCTOR DDlti57D D T -3 3 - 3 5 TOSHIBA GTR MODULE MG 10 0H 2C K 1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA -CDISCRETE/OPTOD- TD 9097250 TOSHIBA DISCRETE/OPTO T O S H IB A T0T7SSD DDltiDSS 0 90D 16022 SEMICONDUCTOR DT"33 '35 TOSHIBA GTR MODULE MG100G2YL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

Mitsubishi transistor

Abstract: QM10 QM100E
Contextual Info: MITSUBISHI TRANSISTOR MODULES Q M 10 0 E 2 Y / E 3 Y - 2 H K « Ic • hFE ! INSULATED TYPE I Collector current. 100A Coilector-emltter voltage. 1000V DC current gain. 75 • Insulated Type • UL Recognized

TRANSISTOR A104

Abstract: BCY59C BCY 85 A104 BCY58 Transistor BCY58 BCY59D A104 transistor BCY 68 CEB15
Contextual Info: MICRO GENERAL DESCRIPTION : BCY 58 BCY 59 MECHANICAL OUTLINE The BCY 58 and BCY 59 are NFN silicon planar epitaxial transistor. It features low saturation voltage and high gain. It is intended for use as audio frequency amplifier, magnetic core driver and general

1w200

Contextual Info: MICRO GENERAL DESCRIPTION : The BCY 58 and BCY 59 are NPN silicon planar epitaxial transistor. It features low saturation voltage and high gain. It is intended for use as audio frequency amplifier, magnetic core driver and general purpose industrial applications.

MG100H2CK1

Abstract: mg100h2ck MG100H2
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100H2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case . With Built-in Free Wheeling Diodes . High DC Current Gain : hFE=200 Min. (IC=100A) . Low Saturation Voltage: VcE(sat)= 2 .5V(Max.)

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-24K • lc Collector c u rre n t. 100A • V cex C ollector-em itter v o lta g e . 1200V • hFE DC current g a in . 75

Contextual Info: Preliminary Data S heet No. P D -9.938 International S Rectifier IRGNI0100M12 "CHOPPER" INT-A-PAK MODULES Fast™ IGBT V CE= 1 2 0 0 V W • Rugged Design .Simple gate-drive • Fast operation up to 10 kHz hard switching, or 50 kHz resonant • Switching-Loss Rating includes all "tail"

qm100hy-h

Contextual Info: I MITSUBISHI TRANSISTOR MODULES I QM100HY-H | HIGH POWER SWITCHING USE j INSULATED TYPE [ QM100HY-H • Ic Collector cu rre n t. 100A • V cex Cotlector-emitter • hFE DC current g a m . 75 . v o lta g e 600V