G100H Search Results

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

Contextual Info: TOSHIBA { D IS CR ETE/ OP TO} 9097250 TOSHIBA TOSHIBA "ID DISCRETE/O PTO SEMICONDUCTOR DE [ t OTO SD []01t,;L3fl 7 | ~ 90D 16138 D TOSH I B A G T R M O D U L E M G 1 0 0 H 1 B S 1 TECHNICAL DATA SILICON N C H A N N E L IGBT HIGH POWER SWITCHING APPLICATIONS.

fet amplifier with unit gain

Abstract: dual photodiode photodiode receiver photodiode germanium Germanium Amplifier db9 connector germanium photodiode
Contextual Info: Receiver Modules Part no: HI / LO SWITCH _ DB-9 PIN OUT A 1 2 3 4 OUTPUT + 5 1.5 G-100-H .35 1.035-40 THD 2.2 NO NO NO NO NO CONNECT CONNECT CONNECT CONNECT CONNECT 6 7 8 9 +V -V GND CASE GND OUTPUT BNC .160 HI LO DB-9 GAIN SELECT POWER CABLE 1/4 - 20 MOUNTING

MG100H2YS1

Contextual Info: GTR MODULL SILICON N CHANNEL IGBT G100H2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf = 1. O/js M a x . trr= 0 . 5 y s ( M a x .) . Low Saturation Voltage : V c E ( s a t )=5.O V (

Contextual Info: TOSHIBA -CDISCRETE/OPTOD- TD 9097250 TOSHIBA DISCRETE/OPTO T O S H IB A T0T7SSD DDltiDSS 0 90D 16022 SEMICONDUCTOR DT"33 '35 TOSHIBA GTR MODULE MG100G2YL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

MG30H1BL1

Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
Contextual Info: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX

MG100H2CK1

Abstract: mg100h2ck MG100H2
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE G100H2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case . With Built-in Free Wheeling Diodes . High DC Current Gain : hFE=200 Min. (IC=100A) . Low Saturation Voltage: VcE(sat)= 2 .5V(Max.)

MG100g2ys1

Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
Contextual Info: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series