IC WE 3 LZ 01 Search Results

Contextual Info: TT WS256K8-XCX M/HITE /M ICRO ELECTRO N ICS 256Kx8 SRAM MODULE FEATURES FIG. 1 • A c c e ss T im e s 25 to 45n S PIN CONFIGURATION TOP VIEW NCC A16C A14C A I2 C A7T A6C A5L A4 C A3C A2¿ A1C AO □ i/oor 1/01 c 1/0 2 C Vss Q 1 2 3 4 5 6 7 8 9 10 11 12 13

Contextual Info: WHITE /MICROELECTRONICS 64Kx16 SRAM WPS64K16-XUX p r e li m i n a r y * PLASTIC PLUS FEATURES • Access Times of 15,17, 20nS PIN CONFIGURATION TOP VIEW AO C 1 A1 C 2 A2 C 3 A3 C 4 A4 E S CS C 6 1/01 C 7 I/Q2 C 8 I/03 C 9 I/04 C 10 Vcc E 11 Vss C 12 1/05 C 13

Contextual Info: □PM V<" P - M icrosvstem s In I~-c D ense-Pac - - - -C - DPS128M8A h i g jn h s ed rA am c n ik a prce c u c L etK M iiL ¿ - -O 128K X 8 C M O S SRAM M O N O LITH IC ADVANCED INFORMATION D ESC R IP TIO N : T h e D P S 1 2 8 M 8 A is a high speed m o no lithic

Contextual Info: M/HITE /MICROELECTRONICS WMS256K4-XDSX 256Kx4 SRAM MONOLITHIC FEATURES PIN CONFIGURATION TOP VIEW 28 □ Vcc 27 □ A17 26 □ A16 25 □ A15 24 HA14 23 ZJA13 22 □ A12 21 3A11 20 ]N C 19 Di/os 18 Hl/02 17 31/01 16 ni/oo 15 □ WÊ A cce ss Times 25, 35, 45ns

rev counter

Abstract: n262 R8A66120FFA 1024K-WORD N258
Contextual Info: R8A66120FFA RJJ03FXXXREJ03F0161-0170 Rev.1.70 May.16.2008 4M-bit x 2 MULTIPLE FIELD MEMORY Description R8A66120FFA is high-speed field memory with two FIFO First In First Out memories of 4M-bit, which uses high-performance silicon gate process technology.

424260-70

Abstract: 424260-70 nec japan 424260-80 PD424260LE
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿P D 4 2 4 2 6 0 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /uPD424260 is a 262,144 words by 16 bits dynamic CMOS RAM. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

Contextual Info: □PM Dense-Pac Microsystems, Inc. ^ CERAMIC 128K X DESCRIPTION: The DPS128M8 is a monolithic 128K X 8 Static Random Access Memory SRAM fabricated using CMOS technology. It is designed for use in high density, high speed, low power applications. All pins

Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT BZX384-C2V4 THRU BZX384-C75 ZENER DIODES SOD-323 FEATURES 012 0.3 ♦ Silicon Planar Power Zener Diodes Cathode Mark ♦ The Zener voltages are graded according to the international E 24 standard. Standard Zener voltage

TDA 7450

Abstract: MVL blower PAPST TYP 8412 NGH papst typ 614 papst 8412 L papst 4214/12h papst variofan 4314 v papst 4312 ebm papst RG 160 papst-motoren
Contextual Info: PAPST BASICS S t a n d a rd R a n g e of Fans and Blowers Tr e n d s e t t e r i n F a n Te c h n o l o g y Among the best. Trendsetting with innovative technologies. Listening to customers’ needs. Developing new ideas to meet requirements and realising them with pioneering spirit.

p 32 lcc 300 r

Abstract: 32-PIN Dense-Pac Microsystems
Contextual Info: 30A03 7-01 B DENSE FAC 1 Megabit High Speed CM O S SRAM MICROSYSTEMS DPS128M8En PRELIMINARY DESCRIPTION: The DPS128M8En is a very high speed 12 8 K x 8 Static Random Access M em ory SRAM fabricated w ith a CMOS silicon gate process. The memory utilizes asynchronouscircuitryand may be maintained in any

Contextual Info: M O S E L V IT E LIC V53C8126H ULTRA-HIGH PERFORMANCE, 128K X 8 B IT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE PRELIMINARY 35 40 45 50 Max. RAS Access Time, tpjAc 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (tcAA) 18 ns 20 ns 22 ns 24 ns

Contextual Info: M O S E L V IT E L IC V53C8126L ULTRA-HIGH PERFORMANCE, 3.3 VOLT 128K X 8 B IT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 60 60 ns Max. RAS Access Time, tpjAc Max. Column Address Access Time, PRELIMINARY 30 ns ( Ìq a a ) Min. Fast Page Mode Cycle Time, (tPC)

Contextual Info: □PM •C Dense-Pac Microsystems, Inc ^ DPS3232V 32K X 32 CMOS SRAM VERSAPAC MODULE DESCRIPTION: The DPS3232V is a 66-pin Pin Grid Array PGA consisting of four 32K X 8 SRAM devices in ceramic LCC packages surface mounted on a co-fired c eram ic substrate w ith m atching thermal

Contextual Info: PR ELIM IN A R Y M O SEL VI TELI C V53C816H 512K X 16 FA ST P A G E M O D E CM O S DYNAM IC R A M HIGH PERFORMANCE 40 45 50 60 Max. RAS Access Tim e, tpj^c 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tcAA) 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, (tpc)

16GH066V1

Contextual Info: SKiiP 16GH066V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter L:BG *: *: *:.` L+BG $G P FE R:Z 1'7&- /2 &%68-& -?& 858&4 $- P FE ]^U_ R: Z$T P QEU R: $- P FE ]^U_ R: Z$T P Q^E R: 2? P Q M- $T MiniSKiiP 1 H-bridge inverter SKiiP 16GH066V1 Diode - Inverter

Contextual Info: W24512A-35NS Winbond Electronics Corp. 64 K x 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24512A is a high speed, low power CMOS static RAM organized as 65536 x 8 bits that operates on a single 5-volt power supply, This device is manufactured using Winbond‘s high

Contextual Info: COPM D P S 1M S 1 6 P 1024KX 16 CMOS SRAM MODULE Dense-Pac Microsystems, Inc. O D ESC R IP TIO N : The DPS1MS16P is a 16 megabit, low-power static RAM module. The module is comprised of sixteen 128K X 8 SRAM devices and two high-speed decoders. The DPS1MS16P can

Contextual Info: DPS129 □PM Dense-Pac Microsystems, Inc. ^ 16K X 8 CMOS SRAM MODULE NOT RECOMENDED FOR NEW DESIGNS D E S C R IP T IO N : The DPS 129 is a 16K X 8 Static Random Access Memory SRAM module using 8 C M O S 16K X 1 SRAMs. The memory utilizes asynchronous circuitry

Contextual Info: TT M/HITE M I C R O E L E C T R O N I C S W M S2 5 6 K 1 6 -X X X 256Kx16 MONOLITHIC SRAM FEATURES • A ccess Tim es 17, 20, 25, 35ns D ata I/O C om patible w ith 3.3V devices ■ M IL-S TD -883 C om p lian t Devices A v a ila b le 2V M in im u m Data R ete ntion fo r b a tte ry back up operatio n

Contextual Info: Creation Date: October 7, 1997 Revision: October 6, 1998 filc o m o R PRELIMINARY A P 9 B 1 1 4 /A P 9 B 1 1 4 L 3.3V, 6 4K x 16, Very High- Speed, Low-Power, CMOS Static RAM With Optional 2V Data Retention Features • • • • • • • • • •

Contextual Info: DENSE-PAC 4 M egabit CMOS SRAM MI CROS YSTEMS DPS512S8N D E S C R IP T IO N : The DPS512S8N is a Military 512K X 8 high-density, low-power static RAM module comprised of four ceramic 128K X 8 monolithic SRAM's, an advanced high-speed CMOS decoder and decoupling capacitors

HM671400H

Abstract: HM671400HJP-15 HM671400HJP-20 Hitachi DSA0019 Hitachi DSA00190 NS07
Contextual Info: HM671400H Series 4,194,304-words x 1-bit High Speed Static Random Access Memory ADE-203-086G Z Rev. 8 Aug. 28, 1996 Features • • • • • • • 4194304-words × 1 bit organization Directly TTL compatible input and output +5.0 V Single Supply Completely static memory

Contextual Info: P R E L IM IN A R Y M O SEL V I T E L I C V 53C 816H 5 1 2 K X 16 F A S T P A G E M O D E C M O S D Y N A M IC R A M HIGH PERFORMANCE 40 45 50 60 Max. RAS Access Tim e, tp^c 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, ( t c ^ ) 20 ns 22 ns 24 ns

Contextual Info: □PM v Dense-Pac Microsystems, Inc. DPS1024 64K X 16 C M O S SRAM M O D U LE O DESCRIPTIO N: The D PS1 0 2 4 is a 64K X 16 high-speed, low-power static R A M module comprised of sixteen 64K X 1 monolithic SR A M 's, and decoupling capacitors surface mounted on a co-fired ceramic substrate