IC MARKING 1G Search Results

HN3C14F

Contextual Info: HN3C14F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 14 F VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO v EBO ic Ib MARKING

PA6E

Contextual Info: m R404441000 1 i TITLE: 1 w BNC/m lghz COAXIAL TERMINATION TECHNICAL DATA 8HEET LTR. E DRAWING ¿1 ma K • = =s — — PACKAGING IO & x -H Standard Uilt Otkar 100 *W opt io* Coitaci ic General tolerances: + /- 0.5 mm Without marking iLEÇTRIÇAL_ÇHARAÇTERISIIÇS

BCX70RG

Abstract: BCX70RK BCX70RJ
Contextual Info: 4684955 I T T SEMICONDUCTORS ~ fl7 87 D 0 2 3 2 1 D l f | 4 b f l 4 ,i S S G D Q E3S1 S I D NPN TRANSISTORS NPN Silicon Transistors Plastic Package TO-236 Marking Code VcEO h FE at VcEsat at Ices I c/ I b V ce/ I c C0b fT til •5:> Type at at Vce/Ic Vcb

MOSFET MARKING 3F

Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
Contextual Info: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz

marking MA

Abstract: 2SC3011
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3011 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low Noise Figure: NF=2.3dB Typ. f=1GHz 1 High fT : fT=6.5GHz 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High Gain :|S21e|2=12dB(TYP.) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: Transistors IC SMD Type Product specification 2SC3011 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low Noise Figure: NF=2.3dB Typ. f=1GHz 1 High fT : fT=6.5GHz 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High Gain :|S21e|2=12dB(TYP.) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1

marking code ce SOT23

Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Contextual Info: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A

Contextual Info: CPH6020 Ordering number : ENA1548 SANYO Semiconductors DATA SHEET CPH6020 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • Low-noise use : NF=1.2dB typ f=1GHz . High cut-off frequency : fT=16GHz typ (VCE=5V).

a1601

Contextual Info: MCH6001 Ordering number : ENA1601 SANYO Semiconductors DATA SHEET MCH6001 NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz . High cut-off frequency : fT=16GHz typ (VCE=5V).

CPH6020

Abstract: a1548 ENA1548 marking GT
Contextual Info: CPH6020 Ordering number : ENA1548 SANYO Semiconductors DATA SHEET CPH6020 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • Low-noise use : NF=1.2dB typ f=1GHz . High cut-off frequency : fT=16GHz typ (VCE=5V).

A1601

Contextual Info: MCH6001 Ordering number : ENA1601 SANYO Semiconductors DATA SHEET MCH6001 NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz . High cut-off frequency : fT=16GHz typ (VCE=5V).

1gm transistor

Abstract: 1GM sot-23 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

ITR06394

Abstract: ITR06395 ITR06396 ITR06397 ITR08172 a1088
Contextual Info: 2SC5375A Ordering number : ENA1088 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5375A VHF to UHF Band OSC, High-Frequency Amplifier Applications Features • • High gain : ⏐S21e⏐2=10dB typ f=1GHz . High cut-off frequency : fT=5.2GHz typ.

2a10902

Abstract: induction heating circuits ITR08168 ITR08169 ITR08170 ITR08171 ITR08172 2SC5374A
Contextual Info: 2SC5374A Ordering number : ENA1090 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5374A VHF to UHF Band OSC, High-Frequency Amplifier Applications Features • • High gain : ⏐S21e⏐2=10.5dB typ f=1GHz . High cut-off frequency : fT=5.2GHz typ.

2SC5538A

Abstract: A1094
Contextual Info: 2SC5538A Ordering number : ENA1094 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5538A VHF to UHF Band OSC, High-Frequency Amplifier Applications Features • • • • High gain : ⏐S21e⏐2=10.5dB typ f=1GHz . High cut-off frequency : fT=5.2GHz typ.

MARKING 1F

Abstract: CSC2712 CSC2712BL CSC2712GR CSC2712Y MARKING 1G TRANSISTOR
Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking C SC 2712Y=1E C S C 2712G R G =1F CSC 2712BL(L)=1G _3.0_ 2.8 0.14 0.09 0.48 0.38 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2.6 2.4 _l.02_

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

KTC3780U

Contextual Info: SEMICONDUCTOR KTC3780U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. NF=1.4dB, |S21e| =12dB f=1GHz . 2 G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage

KTC3780U

Contextual Info: SEMICONDUCTOR KTC3780U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M ・Low Noise Figure, High Gain. ・NF=1.4dB, |S21e| =12dB f=1GHz . 2 D G J A 2 1 3 SYMBOL RATING UNIT Collector-Base Voltage VCBO

BFS17

Abstract: H2D SOT23 h2d transistor MARKING 16 transistor sot23 H2D Marking
Contextual Info: BFS17 NPN 1GHz Medium Wideband Transistor P b Lead Pb -Free 3 COLLECTOR 3 1 1 BASE Applications: SOT-23 2 EMITTER * Mixers and oscillators in TV tuners * RF communications equipment. 2 Descreption: NPN Transistor In a Plastic SOT-23 Package. MAXIMUM RATINGS (TA = 25ºC)

mt3s18

Contextual Info: MT3S18FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S18FS Unit: mm Superior performance in oscillator and buffer applications. • Superior noise characteristics. • : NF = 1.4 dB, |S21e| = 12 dB f =1GHz Lead (Pb)-free. 1 3 0.8±0.05 1.0±0.05

Transistor hFE CLASSIFICATION Marking CE

Abstract: R24 marking code transistor transistor code R24 R24 marking DATASHEET R24 marking code sot23 MMBTSC4226 marking r25 marking r25 NPN NPN R25 transistor amplifier VHF/UHF
Contextual Info: MMBTSC4226 NPN Silicon Epitaxial Planar Transistor High Frequency Low Noise Amplifier. The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. Features: Low Noise NF=1.2dB TYP. @ f=1GHz, VCE=3V, IC=7mA High Gain S21e 2 =9.0dB TYP. @ f=1GHz, VCE=3V, IC=7mA

transistor code R24

Abstract: R24 marking code transistor R24 marking code sot23 marking r25 NPN NPN R25 R24 marking DATASHEET Transistor hFE CLASSIFICATION Marking CE transistor R24 MMBTSC4226
Contextual Info: MMBTSC4226 NPN Silicon Epitaxial Planar Transistor High Frequency Low Noise Amplifier. The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. Features: z Low Noise NF=1.2dB TYP. @ f=1GHz, VCE=3V, IC=7mA z High Gain S21e 2 =9.0dB TYP. @ f=1GHz, VCE=3V, IC=7mA

Contextual Info: MT3S16FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16FS Unit: mm • :NF = 2.4 dB @ 2V, 5mA,1GHz 2 :|S21e| = 4.5 dB (@ 2V, 10mA,1GHz) Lead (Pb)-free. 0.2±0.05 The Cre curve is flat. 0.35±0.05 fT is high and current dependability is excellent.