IC MARKING 1G Search Results

D880 voltage regulator

Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5

HN3C14F

Contextual Info: HN3C14F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 14 F VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO v EBO ic Ib MARKING

Contextual Info: T E C H N IC A L DATA S H E E T R404442120 TITLE: 1 W lGHZ BNC/m COAXIAL TERMINATION LTR .E DRAWING 31 max. Did 4 Bead chain length=70 mm Without marking General tolerances: + /- 0.5 mm ELECTRICAL CHARACTERISTICS DC 1GHz 75 Ohms 75 Ohms ± 1 % 1 W at 25°C

PA6E

Contextual Info: m R404441000 1 i TITLE: 1 w BNC/m lghz COAXIAL TERMINATION TECHNICAL DATA 8HEET LTR. E DRAWING ¿1 ma K • = =s — — PACKAGING IO & x -H Standard Uilt Otkar 100 *W opt io* Coitaci ic General tolerances: + /- 0.5 mm Without marking iLEÇTRIÇAL_ÇHARAÇTERISIIÇS

Contextual Info: S O T- 2 3 B I P O L A R T R A N S I S T O R S NPN TRANSISTORS • New Product Marking VCEO hFE @VCE/IC VCEsat @IC/IB ICES @VCE Type Code V V/mA max.V mA/mA max.nA V BC817-16 6A 45 100-250 1/100 0.7 500/50 100 45 BC817-25 6B 45 160-400 1/100 0.7 500/50 100

BCX70RG

Abstract: BCX70RK BCX70RJ
Contextual Info: 4684955 I T T SEMICONDUCTORS ~ fl7 87 D 0 2 3 2 1 D l f | 4 b f l 4 ,i S S G D Q E3S1 S I D NPN TRANSISTORS NPN Silicon Transistors Plastic Package TO-236 Marking Code VcEO h FE at VcEsat at Ices I c/ I b V ce/ I c C0b fT til •5:> Type at at Vce/Ic Vcb

MOSFET MARKING 3F

Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
Contextual Info: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz

marking MA

Abstract: 2SC3011
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3011 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low Noise Figure: NF=2.3dB Typ. f=1GHz 1 High fT : fT=6.5GHz 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High Gain :|S21e|2=12dB(TYP.) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: Transistors IC SMD Type Product specification 2SC3011 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low Noise Figure: NF=2.3dB Typ. f=1GHz 1 High fT : fT=6.5GHz 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High Gain :|S21e|2=12dB(TYP.) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1

marking code ce SOT23

Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Contextual Info: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A

Contextual Info: CPH6020 Ordering number : ENA1548 SANYO Semiconductors DATA SHEET CPH6020 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • Low-noise use : NF=1.2dB typ f=1GHz . High cut-off frequency : fT=16GHz typ (VCE=5V).

a1601

Contextual Info: MCH6001 Ordering number : ENA1601 SANYO Semiconductors DATA SHEET MCH6001 NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz . High cut-off frequency : fT=16GHz typ (VCE=5V).

CPH6020

Abstract: a1548 ENA1548 marking GT
Contextual Info: CPH6020 Ordering number : ENA1548 SANYO Semiconductors DATA SHEET CPH6020 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • Low-noise use : NF=1.2dB typ f=1GHz . High cut-off frequency : fT=16GHz typ (VCE=5V).

Contextual Info: MCH6001 Ordering number : ENA1601 SANYO Semiconductors DATA SHEET MCH6001 NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz . High cut-off frequency : fT=16GHz typ (VCE=5V).

bc847at

Contextual Info: BC847AT/BT/CT SOT-523 Transistor NPN SOT-523 1. BASE 2. EMITTER 3. COLLECTOR Features — — Ideally suited for automatic insertion For Switching and AF Amplifier Applications MARKING: BC847AT=1E; BC847BT=1F; BC847CT=1G Dimensions in inches and (millimeters)

1gm transistor

Abstract: 1GM sot-23 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

ITR06394

Abstract: ITR06395 ITR06396 ITR06397 ITR08172 a1088
Contextual Info: 2SC5375A Ordering number : ENA1088 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5375A VHF to UHF Band OSC, High-Frequency Amplifier Applications Features • • High gain : ⏐S21e⏐2=10dB typ f=1GHz . High cut-off frequency : fT=5.2GHz typ.

2a10902

Abstract: induction heating circuits ITR08168 ITR08169 ITR08170 ITR08171 ITR08172 2SC5374A
Contextual Info: 2SC5374A Ordering number : ENA1090 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5374A VHF to UHF Band OSC, High-Frequency Amplifier Applications Features • • High gain : ⏐S21e⏐2=10.5dB typ f=1GHz . High cut-off frequency : fT=5.2GHz typ.

ITR06396

Abstract: ITR06397 ITR08172 ITR06394 ITR06395 2SC5375
Contextual Info: 2SC5375A Ordering number : ENA1088 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5375A VHF to UHF Band OSC, High-Frequency Amplifier Applications Features • • High gain : ⏐S21e⏐2=10dB typ f=1GHz . High cut-off frequency : fT=5.2GHz typ.

2SC5538A

Abstract: A1094
Contextual Info: 2SC5538A Ordering number : ENA1094 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5538A VHF to UHF Band OSC, High-Frequency Amplifier Applications Features • • • • High gain : ⏐S21e⏐2=10.5dB typ f=1GHz . High cut-off frequency : fT=5.2GHz typ.

MARKING 1F

Abstract: CSC2712 CSC2712BL CSC2712GR CSC2712Y MARKING 1G TRANSISTOR
Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking C SC 2712Y=1E C S C 2712G R G =1F CSC 2712BL(L)=1G _3.0_ 2.8 0.14 0.09 0.48 0.38 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2.6 2.4 _l.02_

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

KTC3780U

Contextual Info: SEMICONDUCTOR KTC3780U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M Low Noise Figure, High Gain. NF=1.4dB, |S21e| =12dB f=1GHz . 2 G J A 2 SYMBOL RATING UNIT Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage

KTC3780U

Contextual Info: SEMICONDUCTOR KTC3780U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES B M M ・Low Noise Figure, High Gain. ・NF=1.4dB, |S21e| =12dB f=1GHz . 2 D G J A 2 1 3 SYMBOL RATING UNIT Collector-Base Voltage VCBO