IC LA 3661 Search Results

MS25237

Abstract: MIL-L-3661B LH89 LH76 MIL-L-3661 24-20-41 367-8430-09-503 24184 t-1 midget
Contextual Info: SECURE LIGHTING DESIGNED TO MEET REQUIREMENTS OF MIL-L-3661B Used for secure low light level nighttime operation and normal daytime operation. Features • These indicators are designed to meet the Secure Lighting Statement o f Work Priorities instituted by CECOM Communications

LC11GN2

Abstract: LC11BT2 178-0333-500 LC11BN2 LC11RT2 LC11RN2 LC11CN2 MIL-L-3661B MIL-L-6723 178-0331-500
Contextual Info: Incandescent Indicators T-1 3/4 M ID G ET FLA N G E BASE TWO T E R M IN A L S - FULLY INSULATED See lamp ratings on page J. FOR MOUNTING IN 15/32" CLEARANCE HOLE M EET OR EXCEED E N V IR O N M E N T A L A N D O P E R A T IO N A L REQ U IREM ENTS OF M IL-L -6 7 2 3 A N D M IL L -3661B.

qml-38535

Abstract: qml38535
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 1 2 3 PMIC N/A PREPARED BY STANDARDIZED MILITARY DRAWING CHECKED BY THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENT S AND AGENCIES OF THE DEPARTMENT OF DEFENSE

ci scl 4001 be

Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT MC-4516CB64KS, 4516CB64ES 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CB64KS, 4516CB64ES is a 16,777,216 words by 64 bits synchronous dynam ic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM : ^¡PD45128841 are assembled.

T726

Abstract: 1N914 BDX53 BDX53A BDX53B BDX53C BDX63 BDX63A 60si50 ION-M
Contextual Info: T E X A S IN ST R bE -COPTO} D eT| STblVSb DD3thl7 1 _T-33-29_ — g§5T7^~TEXAS~TNSTR 62C 36617 COPTO BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS R E V IS E D O C TO B E R 1 9 8 4 60 W at 2 5 °C Case Temperature

STR w 6053 n

Abstract: STR w 6053 S STR 6053 n STR 6053 PC-620 protech str w 6053 S277-7 STR 6053 S
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North East North Central Northwest 20 M all Road S u ite 410 B u rlin g to n, M A 01803 617 2 7 3 -4 8 88 FAX: (617) 2 7 3 -9 3 63 901 W a rre n v ille R oad S u ite 120 Lisie, IL 6053 2 -13 5 9 (708) 852-2011 FAX: (708) 852-3096

MS25041

Abstract: MS25041-7 MS25041-1 MS25041-4 MS25041-3 MS25041-8 MS25041-2 MIL-L-7961B MS25041-10 800033-1
Contextual Info: S u b -M in ia tu r e In c a n d e s c e n t P R E S S - T O - T E S T In d ic a to rs M IL IT A R Y S T A N D A R D D RAW ING MS25041 - 1 to 11 For back of panel mounting in 15/32" clearance hole Meet or exceed requirements of M IL —L —7961B and M IL —L —3661

13A 648

Abstract: HLMP-0103
Contextual Info: lÜ P J k • i integrated nesistor Lamps 5 Volt and 12 Volt in T-l and T-l3/* Packages HLMP- 1100 , HLMP- 1120 HLMP- 1600, HLMP- 1601 HLMP- 1620, HLMP- 1621 HLMP- 1640* HLMP- 1641 TTT H T D 0 1 A ÍT T1JT “ O i U U . J .X J U L T J X •3112 HLMP- 3600, HLMP- 3601

Contextual Info: M O S E L V IT E L IC V43648Z04VTG 3.3 VOLT 8M x 64 HIGH PERFORMANCE 100 M H Z SDRAM UNBUFFERED SODIMM PRELIMINARY Features Description • Using 8M x 8 SDRAMs ■ JEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module SODIMM ■ Serial Presence Detect with E2PROM

Contextual Info: MOSEL V IT E L IC V43648Z0V 3.3 VOLT 8M x 64 HIGH PERFORMANCE 100 M H Z SDRAM UNBUFFERED SODIMM PRELIMINARY Features Description • Using 8M x 8 SDRAMs ■ JEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module SODIMM ■ Serial Presence Detect with E2PROM

Contextual Info: M O S E L V IT E L IC V43644Y04VTG 3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM PRELIMINARY Features Description • JEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module SODIMM ■ Serial Presence Detect with E2PROM ■ Nonbuffered

Contextual Info: MOSEL V IT E L IC V43648Z04VTG 3.3 VOLT 8M x 64 HIGH PERFORMANCE 100 M H Z SDRAM UNBUFFERED SODIMM PRELIMINARY Features Description • Using 8M x 8 SDRAMs ■ JEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module SODIMM ■ Serial Presence Detect with E2PROM

Contextual Info: MOSEL VITELIC V43648Z0V 3.3 VOLT 8M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM PRELIMINARY Features Description • Using 8M x 8 SDRAMs ■ JEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module SODIMM ■ Serial Presence Detect with E2PROM

Contextual Info: MOSEL V IT E L IC V43644Y0V 3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 M H Z SDRAM UNBUFFERED SODIMM PRELIMINARY Features Description • JEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module SODIMM ■ Serial Presence Detect with E2PROM ■ Nonbuffered

Contextual Info: HYMD18M6456-H/L 8Mx64 DDR Unbuffered SO-DIMM SERIAL PRESENCE DETECT Bin S o r t: K DDR266A@ CL=2 , H(DDR266B@ CL=2.5), L(DDR200@ CL=2) Function Supported Byte# H e x a V a lu e F u n c tio n D e s c rip tio n Note K Number of Bytes written into serial memory at module

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

B5218

Abstract: uc 1201a 14001-1
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. N orth C entral N o rth w e st N orth E a s t 20 M all R oad S u ite 410 B u rlin g to n, M A 01803 617 2 7 3 -4 8 88 F A X (6 1 7 )2 7 3 -9 3 6 3 901 W a rre n v ille R oad S uite 120 Lisle, IL 6 0 5 3 2 -13 5 9

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD64KS, 4516CD64ES 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CD64KS, 4516CD64ES is a 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM: ,uPD45128163 are assembled.

Contextual Info: HYMD132G725A8-K/H/L 32Mx72 DDR SDRAM Registered DIMM SERIAL PRESENCE DETECT Bin Sort : K D D R 266A eC L=2 , H(DDR266B C L=2.5), L(DDR 200® CL=2) Hexa Value Function Supported Function Description Byte# Note K H L K H Number of Bytes written into serial memory at module

JXXX

Contextual Info: MITSUBISHI LSIs e MH64S72QJA -7,-8 e°- 4,831,838,208-BIT 67,108,864-WQRD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY S o m e o f c o n te n ts are s u b je c t to c h a n g e w ith o u t n o tice . DESCRIPTION The MH64S72QJA is 67108864 - word x 72-bit

WIMA TFM

Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Contextual Info: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-454DA726 4 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-454DA726 is an 4,194,304 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 64M SDRAM : ,uPD4564163 Rev. E are assembled. This module provides high density and large quantities of memory

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.

4229P-LOO-3C8

Contextual Info: MOT OR OL A SC 1EE D | b3fe,72S4 QOflSlGS b | XSTRS/R F MOTOROLA M J1 2 0 2 0 TECHNICAL DATA MJ12021 MJ12022 SEMICONDUCTOR De s i g n e r ’ s D a t a She et 5 .0 , 8 .0 and 1 5 A M P E R E NPN SILIC O N DEFLECTION POWER T R A N SISTO R S HIGH PERFORMANCE NPN