IC 5M8 Search Results

CM900HG-90H

Abstract: cm900hg hvigbt diode HVIGBT from Mitsubishi electric
Contextual Info: MITSUBISHI HVIGBT MODULES CM900HG-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HG-90H ● IC . 900 A ● VCES . 4500 V

CM600HG-130H

Abstract: HVIGBT from Mitsubishi electric
Contextual Info: MITSUBISHI HVIGBT MODULES CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HG-130H ● IC . 600 A ● VCES . 6500 V

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HG-66H ● IC . 1200 A ● VCES . 3300 V

Contextual Info: MITSUBISHI HVIGBT MODULES CM900HG-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HG-90H ● IC . 900 A ● VCES . 4500 V

Contextual Info: MITSUBISHI HVIGBT MODULES CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HG-130H ● IC . 600 A ● VCES . 6500 V

BIPOLAR TRANSISTOR

Abstract: CM1200HG-66H
Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HG-66H ● IC . 1200 A ● VCES . 3300 V

m5m8050

Abstract: M5M8050H 8050h M5M8050H-XXXP 8050-H M5L8243P 5M80 M5M8040HP
Contextual Info: n i T S U B I S H I í M I C n P T R / n i P R O TI » e | b H 4 c105ñ DOllSñS D M IT S U B IS H I M IC RO CO M PUTERS M5M8050H-XXXP/M5M8040HP 6249828 MITSUBISHI MICMPTR/MIPRC 9 1D 1 1585 D S IN G L E -C H IP 8 -B IT M IC RO CO M PUTER DESCRIPTION PIN CONFIGURATION (TOP VIEW)

CM900HG-90H

Abstract: HVIGBT transistor 103 cm900hg ic 5m8 CM900HG-90
Contextual Info: 三菱半導体〈HVIGBTモジュール〉 CM900HG-90H 大電力スイッチング用 絶縁形 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール CM900HG-90H ● IC . 900 A

CM600HG-130H

Abstract: CM600HG-130 CM600HG 50IC CM600H
Contextual Info: 三菱半導体〈HVIGBTモジュール〉 CM600HG-130H 大電力スイッチング用 絶縁形 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール CM600HG-130H ● IC . 600 A

CM400E2G-130H

Abstract: cm400e CM400E2 P-20095
Contextual Info: 三菱半導体〈HVIGBTモジュール〉 CM400E2G-130H 大電力スイッチング用 絶縁形 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール CM400E2G-130H ● IC . 400 A

iec 61287

Abstract: CM1200HG-66H HVIGBT
Contextual Info: 三菱半導体〈HVIGBTモジュール〉 CM1200HG-66H 大電力スイッチング用 絶縁形 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール CM1200HG-66H ● IC . 1200 A

Contextual Info: DATA SHEET f MOS INTEGRATED CIRCUIT fiP D 4 2 S1 S1 6 0 ,4 21 6 16 0 ,4 2 S1 8 1 6 0 ,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The juPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynam ic CM OS RAMs.

M5M82C51AP

Abstract: M5M82C51 M5M82C51AFP 82c51afp M5L8085
Contextual Info: M ITSU B ISH I LSIs M5M82C51AP/FP/J C M O S PR O G R A M M A B LE C O M M U N IC A TIO N IN TER FA CE DESCRIPTION The M5M82C51AP is a universal synchronous/asynchronous PIN CONFIGURATION TOP VIEW re c e iv e r/tra n s m itte r (U S A R T) 1C chip d e s ig n e d for data

BB88

Abstract: SMB313 SM8313 79931
Contextual Info: SM8313 - 23 FCR8 . 0 MC5 T a - 20 Cdeg] G a . V 1H /V 1L 7 5 CV3 0 T y p ic a l - « Worst • » 3 I 1 1 1 1 b . V2H/V2L CV] -1 7 1 1 i i • i i 1 ■ i i i i 5 3 ; 1 -1 .5 .3 V2H — -\»i » - -i i i i i c . Fosc U4Ï - - .1 - .1 - - .3 i - .S 200

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

M5L8253P-5

Abstract: M5M82C54P M5M82C54P-6 24P4 RL011 CU16 m5l8253
Contextual Info: MITSUBISHI LS Is & M 5 M 8 2 C 5 4 P ,- 6 AÛO*'. s/ » 'S * c * CMOS P ROGRAMM ABLE IN T E R V A L T IM E R 9 1D 1 1984 6249828 MITSUBISHI<MICMPTR/MIPRC> _ DESCRIPTION T h e M 5 M 8 2 C 5 4 P .-6 is a p ro g ra m m a b le g e n e ra l-p u rp o s e tim ­

m5l8085

Abstract: M5L8085a M5L8085AP e15f M5M82C37AP M5M82C37AP-5
Contextual Info: MITSUBISHI LSIs M 5 M 8 2 C 3 7 A P -4 .-5 • s a s s i'* ' *» * 9 1D 11947 D / T-52-33-19 CMOS PROGRAMMABLE DMA CONTROLLER I 6249828 MITSUBISHICMICMPTR/MIPRC DESCRIPTION The M5M82C37AP-4.-5 is a programmable 4-channel DMA D ire ct Memory Access) controller. This device is specially

30f 124 equivalent

Contextual Info: SMBG AND SMBJ5.0 THRU 170CA SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Stand-off Voltage - 5.0 to 170 Volts Peak Pulso Power - 600 Watts PO-214AA FEATURES MODIFIED J'BEND ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0

M5M82C51AP

Abstract: M5M82C51AP/FP/J
Contextual Info: ETE D • bEM^asa O G I 4T S 1 2 ■ M ITSU B ISH I LSIs M5M82C51AP/FP/J MITSUBISHI HICMPTR/MIPRC CMOS PROGRAMMABLE COMMUNICATION INTERFACE T - r7 5 -3 '7 '0 7 DESCRIPTION The M5M82C51AP is a universal synchronous/asynchronous receiver/transmitter (USART) 1C chip designed for data

pin diagram of ic 8086

Abstract: 8085a 5M82C59AP2
Contextual Info: ni TS UB is Hi í n i c n P T R / n i P R O 1>F| ba>Hú2fl 0012027 3 j - ,M IT S U B IS H I LS ls ti M 5 M 8 2 C 5 9 A F P ,-2 6249828 MITSUBISHI MICMPTR/MIPRC “ 91D 12027 D CMOS PROG RAM M ABLE IN T E R R U P T C O N TRO LLER T - S ir 33-/3 DESCRIPTION

5M80ZT100

Abstract: 5M570ZM100 5M2210ZF256 5M160ZE64 5m240Zt100 5M1270ZF324 5m570ZT144 EP4CE15F17 5M40ZE64A5 5M1270ZT
Contextual Info: The Automotive-Grade Device Handbook The Automotive-Grade Device Handbook 101 Innovation Drive San Jose, CA 95134 www.altera.com AUT5V1-2.0 Document last updated for Altera Complete Design Suite version: Document publication date: 11.0 May 2011 Subscribe 2011 Altera Corporation. All rights reserved. ALTERA, ARRIA, CYCLONE, HARDCOPY, MAX, MEGACORE, NIOS, QUARTUS and STRATIX are Reg. U.S. Pat.

M5M82C255ASP

Abstract: M5M82C255 m5l8085ap m5m82c55AP-2 5m82c255 M5M82C55AP2 M5M82C55AP 5m82c55ap M5M82C55
Contextual Info: M ITSUBISHI L S I* M5M82C255ASP CMOS P R O G R A M M A B LE P E R IP H E R A L IN TER FACE DESCRIPTION The M5M82C255ASP is a LSI equivalent to two M5M82C55AP-2. It is housed in a single 64-pin shrink DIP. The M5M82C255ASP is fabricated using sillcon-gate CMOS technology for a single supply voltage. This LSI is a

LS486

Abstract: 1S485 1S486 S466 IS465 lS485
Contextual Info: lS485/lS486 1S485/1S486 Bulit-in Amp. Type OPIC Light Detector • Features 1. Built-in Schmidt trigger circuit 2. High sensitivity E : MAX. 35 L x at Ta = 25-C 3. A wide range of operating supply voltage (v. : –0.5 to 17V) 4. LSTTL and TTL compatible output

VIC068 ICMS

Abstract: A07-A01 BA543 VIC068 software
Contextual Info: VTC Incorporated VIC068 VMEbus INTERFACE CONTROLLER FEATURES • Complete VMEbus Interface Controller and Arbiter - 58 Internal Registers Provide Configuration Control and Status of VME and Local Operations - Drives Arbitration, Interrupt, Address Modifier