HVIGBT Search Results

CM800HC-66H

Abstract: r 1241 transistor
Contextual Info: MITSUBISHI HVIGBT MODULES CM800HC-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HC-66H ● IC . 800A ● VCES . 3300V

CM1800HCB-34N

Abstract: HVIGBT
Contextual Info: MITSUBISHI HVIGBT MODULES CM1800HCB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1800HCB-34N ● IC . 1800 A ● VCES . 1700 V

CM1200HCB-34N

Abstract: TRANSISTOR JC 515 transistor 2955
Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HCB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HCB-34N ● IC . 1200A ● VCES . 1700V

Contextual Info: MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.1 Approved by H. Yamaguchi : Apr. 2009 CM1200HC-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-90R ● IC ………………………

MT 2800 N

Abstract: D 1062 transistor CM800HG-90R
Contextual Info: Prepared by S. Iura Approved by H. Yamaguchi : Jul. 2010 MITSUBISHI HVIGBT MODULES Revision: 1.0 CM800HG-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HG-90R ● IC ………………………

Contextual Info: CM1200E4C-34N Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Chopper IGBTMOD HVIGBT Module 1200 Amperes/1700 Volts A D U D K (4 TYP) 4 F 2 B C V E 3 1 C E G M (3 TYP) W G H L (6 PLACES) J N T 4(C) 2(A) 3(E) 1(K) C

D 1062 transistor

Abstract: HVM-1062
Contextual Info: CONFIDENTIAL MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.0 Approved by H. Yamaguchi : Jul. 2010 CM800HG-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE COMPANY PROPRIETARY

QID4515002

Abstract: RG409 551 diode
Contextual Info: QID4515002 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING

transistor k 975

Contextual Info: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING

CM400HG130H

Contextual Info: CONFIDENTIAL Revision: A Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules COMPANY PROPRIETARY

CM1500HG-66R

Abstract: cm1500hG CM1500HG -66R
Contextual Info: MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.1 Approved by H. Yamaguchi : Apr. 2009 CM1500HG-66R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1500HG-66R ● IC ………………………

150004

Contextual Info: CM1200DB-34N Dual IGBTMOD HVIGBT Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 1200 Amperes/1700 Volts A D D U K (4 TYP) 4 2 Q F B C E 3 Y 1 Z E1 E2 AA G1 M (3 TYP) G2 V W C1 C2 L (6 PLACES) J H G AB

Contextual Info: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING DEPTH)

1035 transistor

Contextual Info: CONFIDENTIAL Revision: C Prepared by S.Iura Date I.Umezaki 5-Sep.-2011 MITSUBISHI HVIGBT MODULES CM2400HC-34N th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor MODULES HIGH POWER SWITCHING USE INSULATED TYPE COMPANY PROPRIETARY NOT TO BE REPRODUCED OR DISCLOSED WITHOUT SPECIFIC

CM2500DY-24S

Abstract: 5000Amperes 016C
Contextual Info: CM2500DY-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual Half-Bridge IGBTMOD HVIGBT Series Module 2500 Amperes/1200 Volts G F A G G J (18 PLACES) H (12 PLACES) G E2 G2 C2 E2 C1 C1 F S L C2E1 V C B D C2E1

CM1800DY-34S

Abstract: 103T-D 10 kw igbt inverter thermistor ntc 60 1102
Contextual Info: CM1800DY-34S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual Half-Bridge IGBTMOD HVIGBT Series Module 1800 Amperes/1700 Volts G F A G G J (18 PLACES) H (12 PLACES) G E2 G2 C2 E2 C1 C1 F S L C2E1 V C B D C2E1

CM900HB-90H

Contextual Info: MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HB-90H ● IC . 900A ● VCES . 4500V

CM1800HC-34H

Contextual Info: MITSUBISHI HVIGBT MODULES CM1800HC-34H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1800HC-34H ● IC . 1800A ● VCES . 1700V

CM1200DC-34N

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200DC-34N 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200DC-34N ● IC . 1200A ● VCES . 1700V

CM1000HC-66R

Abstract: 1061 transistor HVIGBT transistor h 1061
Contextual Info: < HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1000HC-66R       IC •······························································ 1000A

CM800DZ-34H

Contextual Info: MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800DZ-34H ● IC . 800A ● VCES . 1700V

CM800HB-50H

Contextual Info: MITSUBISHI HVIGBT MODULES CM800HB-50H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-50H ● IC . 800A ● VCES . 2500V

CM1800HC-34H

Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1800HC-34H PRE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE

hvigbt diode

Abstract: Converter for Induction Heating CM800HB-66H M6 transistor
Contextual Info: MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-66H ● IC . 800A ● VCES . 3300V