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Infineon Technologies AG


Infineon Technologies AG EVALM7HVIGBTPFCINV1TOBO1 EVALM7HVIGBTPFCINV1TOBO1 - Boxed Product (Development Kits) (Alt: EVALM7HVIGBTPFCINV1TOBO1)
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Avnet Americas	EVALM7HVIGBTPFCINV1TOBO1	Box	2	8 Weeks, 5 Days	1	1 $58.38 10 $58.38 100 $58.38 1000 $58.38 10000 $58.38	Buy Now
Newark	EVALM7HVIGBTPFCINV1TOBO1	Bulk			1	1 $88.29 10 $88.29 100 $88.29 1000 $88.29 10000 $88.29	Buy Now
Infineon Technologies AG EVALM7HVIGBTPFCINV4TOBO1 EVALM7HVIGBTPFCINV4TOBO1 - Boxed Product (Development Kits) (Alt: EVALM7HVIGBTPFCINV4TOBO1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	EVALM7HVIGBTPFCINV4TOBO1	Box	2	8 Weeks, 5 Days	1	1 $58.38 10 $58.38 100 $58.38 1000 $58.38 10000 $58.38	Buy Now
Newark	EVALM7HVIGBTPFCINV4TOBO1	Bulk			1	1 $88.29 10 $88.29 100 $88.29 1000 $88.29 10000 $88.29	Buy Now
Infineon Technologies AG EVALM7HVIGBTINVTOBO1 IKD04N60RC2 TRENCHSTOP RCD2 IGBT Modular Application Design Kit Evaluation Board - Boxed Product (Development Kits) (Alt: EVALM7HVIGBTINVTOBO1)
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Avnet Americas	EVALM7HVIGBTINVTOBO1	Box			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	EVALM7HVIGBTINVTOBO1	Bulk			1	1 $77.53 10 $77.53 100 $77.53 1000 $77.53 10000 $77.53	Buy Now

HVIGBT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CM800HC-66H Abstract: r 1241 transistor Contextual Info: MITSUBISHI HVIGBT MODULES CM800HC-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HC-66H ● IC . 800A ● VCES . 3300V	Original	cm800hc-66h /-15v r 1241 transistor	PDF
CM1800HCB-34N Abstract: HVIGBT Contextual Info: MITSUBISHI HVIGBT MODULES CM1800HCB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1800HCB-34N ● IC . 1800 A ● VCES . 1700 V	Original	cm1800hcb-34n hvigbt	PDF
CM1200HCB-34N Abstract: TRANSISTOR JC 515 transistor 2955 Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HCB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HCB-34N ● IC . 1200A ● VCES . 1700V	Original	cm1200hcb-34n transistor jc 515 transistor 2955	PDF
Contextual Info: MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.1 Approved by H. Yamaguchi : Apr. 2009 CM1200HC-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-90R ● IC ………………………	Original	cm1200hc-90r hvm-1057-a	PDF
MT 2800 N Abstract: D 1062 transistor CM800HG-90R Contextual Info: Prepared by S. Iura Approved by H. Yamaguchi : Jul. 2010 MITSUBISHI HVIGBT MODULES Revision: 1.0 CM800HG-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HG-90R ● IC ………………………	Original	cm800hg-90r hvm-1062 mt 2800 n d 1062 transistor	PDF
Contextual Info: CM1200E4C-34N Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Chopper IGBTMOD HVIGBT Module 1200 Amperes/1700 Volts A D U D K (4 TYP) 4 F 2 B C V E 3 1 C E G M (3 TYP) W G H L (6 PLACES) J N T 4(C) 2(A) 3(E) 1(K) C	Original	cm1200e4c-34n amperes/1700	PDF
D 1062 transistor Abstract: HVM-1062 Contextual Info: CONFIDENTIAL MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.0 Approved by H. Yamaguchi : Jul. 2010 CM800HG-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE COMPANY PROPRIETARY	Original	cm800hg-90r hvm-1062 d 1062 transistor	PDF
QID4515002 Abstract: RG409 551 diode Contextual Info: QID4515002 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING	Original	qid4515002 amperes/4500 083k/w 157k/w +2rg409 551 diode	PDF
transistor k 975 Contextual Info: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING	Original	qid4515001 amperes/4500 180nh 100nh +1transistor k 975	PDF
CM400HG130H Contextual Info: CONFIDENTIAL Revision: A Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules COMPANY PROPRIETARY	Original	cm400hg-130h hvm-1045-a cm400hg130h	PDF
CM1500HG-66R Abstract: cm1500hG CM1500HG -66R Contextual Info: MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.1 Approved by H. Yamaguchi : Apr. 2009 CM1500HG-66R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1500HG-66R ● IC ………………………	Original	cm1500hg-66r hvm-1059 cm1500hg cm1500hg -66r	PDF
150004 Contextual Info: CM1200DB-34N Dual IGBTMOD HVIGBT Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 1200 Amperes/1700 Volts A D D U K (4 TYP) 4 2 Q F B C E 3 Y 1 Z E1 E2 AA G1 M (3 TYP) G2 V W C1 C2 L (6 PLACES) J H G AB	Original	cm1200db-34n amperes/1700 150004	PDF
Contextual Info: QID4515001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Dual IGBTMOD HVIGBT Module 150 Amperes/4500 Volts S NUTS (3TYP) A D F J (2TYP) C N 7 8 F H 1 2 M 5 6 B E 3 4 H V (4TYP) G (3TYP) R (DEEP) K (3TYP) T (SCREWING DEPTH)	Original	qid4515001 amperes/4500 180nh 100nh	PDF
1035 transistor Contextual Info: CONFIDENTIAL Revision: C Prepared by S.Iura Date I.Umezaki 5-Sep.-2011 MITSUBISHI HVIGBT MODULES CM2400HC-34N th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor MODULES HIGH POWER SWITCHING USE INSULATED TYPE COMPANY PROPRIETARY NOT TO BE REPRODUCED OR DISCLOSED WITHOUT SPECIFIC	Original	cm2400hc-34n hvm-1035-c 1035 transistor	PDF

CM2500DY-24S Abstract: 5000Amperes 016C Contextual Info: CM2500DY-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual Half-Bridge IGBTMOD HVIGBT Series Module 2500 Amperes/1200 Volts G F A G G J (18 PLACES) H (12 PLACES) G E2 G2 C2 E2 C1 C1 F S L C2E1 V C B D C2E1	Original	cm2500dy-24s amperes/1200 5000amperes 016c	PDF
CM1800DY-34S Abstract: 103T-D 10 kw igbt inverter thermistor ntc 60 1102 Contextual Info: CM1800DY-34S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual Half-Bridge IGBTMOD HVIGBT Series Module 1800 Amperes/1700 Volts G F A G G J (18 PLACES) H (12 PLACES) G E2 G2 C2 E2 C1 C1 F S L C2E1 V C B D C2E1	Original	cm1800dy-34s amperes/1700 16k/kw 27k/kw +3103t-d 10 kw igbt inverter thermistor ntc 60 1102	PDF
CM900HB-90H Contextual Info: MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HB-90H ● IC . 900A ● VCES . 4500V	Original	cm900hb-90h	PDF
CM1800HC-34H Contextual Info: MITSUBISHI HVIGBT MODULES CM1800HC-34H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1800HC-34H ● IC . 1800A ● VCES . 1700V	Original	cm1800hc-34h /-15v 13k/kw	PDF
CM1200DC-34N Contextual Info: MITSUBISHI HVIGBT MODULES CM1200DC-34N 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200DC-34N ● IC . 1200A ● VCES . 1700V	Original	cm1200dc-34n 19k/kw 42k/kw /-15v	PDF
CM1000HC-66R Abstract: 1061 transistor HVIGBT transistor h 1061 Contextual Info: < HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1000HC-66R       IC •······························································ 1000A	Original	cm1000hc-66r hvm-1061-b 1061 transistor hvigbt +1transistor h 1061	PDF
CM800DZ-34H Contextual Info: MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800DZ-34H ● IC . 800A ● VCES . 1700V	Original	cm800dz-34h	PDF
CM800HB-50H Contextual Info: MITSUBISHI HVIGBT MODULES CM800HB-50H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-50H ● IC . 800A ● VCES . 2500V	Original	cm800hb-50h 012k/w 024k/w	PDF
CM1800HC-34H Contextual Info: MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1800HC-34H PRE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE	Original	cm1800hc-34h	PDF
hvigbt diode Abstract: Converter for Induction Heating CM800HB-66H M6 transistor Contextual Info: MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800HB-66H ● IC . 800A ● VCES . 3300V	Original	cm800hb-66h hvigbt diode converter for induction heating m6 transistor	PDF

HVIGBT Search Results

HVIGBT Price and Stock

Infineon Technologies AG EVALM7HVIGBTPFCINV1TOBO1

Infineon Technologies AG EVALM7HVIGBTPFCINV4TOBO1

Infineon Technologies AG EVALM7HVIGBTINVTOBO1

HVIGBT Datasheets Context Search

CM800HC-66H

CM1800HCB-34N

CM1200HCB-34N

MT 2800 N

D 1062 transistor

QID4515002

transistor k 975

CM400HG130H

CM1500HG-66R

150004

1035 transistor

CM2500DY-24S

CM1800DY-34S

CM900HB-90H

CM1800HC-34H

CM1200DC-34N

CM1000HC-66R

CM800DZ-34H

CM800HB-50H

CM1800HC-34H

hvigbt diode