IC 5101 RAM Search Results

5101 RAM

Abstract: intel 2101 Static RAM
Contextual Info: intei P/N Typ. Current @ 2V Typ. Current @ 5V PA (HA) 5101L 5101L-1 5101L-3 0.14 0.14 0.70 • Single +5V Power Supply ■ Ideal for Battery Operation (5101L) 0.2 0.2 1.0 RAM 5101 FAMILY x 256 x 4 BIT STATIQXMOSjRAM Max Access (ns) 650 450 650 ■ Directly TTL Compatible:

Contextual Info: In t e l M5101-4, M5101L-4 256 X 4 BIT STATIC CMOS RAM • Military Temperature Range: -5 5 °C to +125°C Single +5V Power Supply ■ Ultra Low Standby Current: 200nA/Bit CE 2 Controls Unconditional Standby Mode ■ Fast Access Time — 800ns Three-State Output

UM5101

Abstract: ums 3691
Contextual Info: □ M C UM5101 WÊÊÊÊÊÊÊÊtÊÊÊBHBÊÊnÊÊÊÊÊÊÊÊSÊÊÊÊÊÊÊÊÊÊÊÊÊÊ Voice Recorder and Reproducer Features • ■ It can be co nnected to one o r tw o D R A M and used to ■ store v o ice data. ■ The B it rates can be selected

N5101

Abstract: n5100 ASJ3 5100H
Contextual Info: MN5100 MN5101 i —m M IC R O HIGH-SPEED 8-Bit AID CONVERTERS N E T W O R K S DESCRIPTION • H igh C on versio n S peed 90 0 n s e c MN5101 1.5 iSec MN5100 • S m all 24-P in D IP • + 1 /2 L S B L in ea rity and N o M issing C od es O ve r Tem p eratu re

HM435101

Abstract: L0145 D11-CR HM43 MCM5101 ram 5101 s5101* ami D11/CR HM6501 MCM5101C65
Contextual Info: r> • r . @ M O T O R O L A \ > >.\ 0 u MCM5101 MCM51L01 2 5 6 x4 BIT STATIC RAM CMOS T h e M C M 5 1 0 1 fa m ily o f C M O S R A M s o ffe r s u ltra lo w p o w e r a n d f u l­ ly s ta tic o p e ra tio n w it h a s in g le 5 -v o lt s u p p ly . T h e C M O S 1 0 2 4 -b it

OPTOCOUPLER 5V

Abstract: ph7d diode ITT 7HO Diode SV-02 LMS100 LHB1 X 25 UMI 2.5A 150 200W-500W LM5020 LM5069
Contextual Info: is a ia | tfê J M 2 0 0 6 0 4 n z . .1 n s . 5L#<$ n ia u - a s * ll# . 2 - 3 * l|g 5 ^ |E fO |E . 4 . 7 ^ ^ S :-§ -« H 4 . S-E\o\ q ^ o j . 8 o > ^ S 5L%\<# A c l $ 1 ^ 4 l ^ § * 1 3 - ^ € 3 1 ^ 3 M ^ ^ ^ ] i r

Contextual Info: y UCC3996 U I M IT R O D E ADVANCE INFORMATION Dual Sequencing Hot Swap Power Manager FEATURES DESCRIPTION • Precise Linear Current Amplifier for high efficiency and low voltage drop The UCC3996 family of Hot Swap Power Managers provides hot swap control, fault handling and power supply sequencing of two positive sup­

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 72 M-bit 256Kx 18x 16d Direct Rambus DRAM Description The Direct Rambus DRAM (Direct RDRAM™) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where

S0211

Abstract: SD306 5200vg
Contextual Info: DIMOS ELECTR ICA L CH A RA CTERISTICS = +25°C unless otherwise specified b v S b <v > IV Drain-To-Substrate SourceTo-Substrate <DSS fc«A) Zero Bias V GB = 0V Source * Open V g b = »v Drain = Open Drain Current IS D iO W nA> Orain-To-Source V d s = +15V

Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M CM 62963 Product Preview 4 K x 1 0 B it S ynchronous S ta tic R A M with Output Registers The MCM62963 is a 40,960 bit synchronous static random access memory organized as >1096 words of 10 bits, fabricated using Motorola's second-generation high-performance

Ba 33 bco

Contextual Info: Direct RDRAM RAMBUS TM 32/36-M bit 256K x16/18x8d ADVANCE INFORMATION O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application

MAXIM Pin Compatible Upgrade for

Contextual Info: ~ Semiconductor, Inc. TC1223 TC1224 50 mA AND 100 mA CMOS LDOs WITH SHUTDOWN FEATURES GENERAL DESCRIPTION • ■ ■ The TC1223 and TC1224 are high accuracy typically ±0.5% CMOS upgrade for older (bipolar) low dropout regulators such as the LP2980. Designed specifically for

Contextual Info: TAIWAN LITON ELECTRONIC 4TE D • ôfi3SbTS ODOBôlb 473 ■ TLIT T - a 1-3 3 482XC L IT E M : 0.4" DUAL DIGIT NUMERIC DÏSPiAYS FEATURES • 0.4 INCH 10.21 mm D IG IT HEIG HT. • CONTINUOUS U N IFO R M SEGMENTS. • CHOICE OF FOUR B R IG H T C O L O R S -R E D /

Contextual Info: 606HM Transmit Converter Features • Accom m odates either single-rail or dual-rail u n ipolar input ■ Provides the required overshoot on the trailing edge of the DS1 ou tp u t pulse ■ Contains 5 selectable equalizers ■ Provides the line loopback function

AM29F040B

Contextual Info: PRFLifVliNApv AM D il Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35nm process technology

p-channel pin mosfet 5102

Abstract: 1N5823 300khz pwm ic for step down converter 473 coilcraft d 7411 3 INPUT AND gate IC 7414 NSQ03A02L PIN diagram 7411 RCH875 MAX1649
Contextual Info: 19-0305; Rev 2; 9/95 KIT ATION EVALU E L B AVAILA 5V/3.3V or Adjustable, High-Efficiency, Low-Dropout, Step-Down DC-DC Controllers The MAX1649/MAX1651 BiCMOS, step-down, DC-DC switching controllers provide high efficiency over loads ranging from 1mA to more than 2.5A. A unique, currentlimited pulse-frequency-modulated PFM control scheme

Contextual Info: MITSUBISHI LSIs M5M482128AJ,TP,RT-7,-8,-10 1 0 4 8 5 7 6 -B IT DUAL-PORT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION TOP VIEW M 5 M 4 8 2 1 2 8 A J , TP , RT is a high speed 1 0 4 8 5 7 6 -b it Dual Port D ynam ic M em o ry equipped w ith a 1 2 8 K x 8 S E R IA L

MAX820T

Contextual Info: 19-0147; Rev. 0; 6/93 w iy jx i/ i/ i Microprocessor and Non-Volatile Memory Supervisory Circuits 1 2) nP reset: Assertion of RESET and RESET outputs during power-up, power-down, and brownout conditions. RESET is guaranteed valid for Vcc down to 1V. Manual-reset input.

Contextual Info: TMS44100 4 194 304-BIT DYNAMIC RANDOM-ACCESS MEMORY S M H S 410B — SEPTEM BER 1 9 8 9 — REVISED JANUARY 1991 This Data Sheet is Applicable to A ll TMS44100s Symbolized With Revision "B" and Subsequent Revisions as Described on Page 5-106. DM and DJ Packages*

TC524258B

Abstract: TC524258BZ TC524258BJ TC524258 tc5242588
Contextual Info: TOSHIBA TC524258B t a r g e t s il ic o n g a t e c m o s 262,144WORDS X 4BITS MULTIPORT DRAM DESCRIPTION T he TC524258B is a CM OS m ultiport m em ory equipped with a 262,144-words by 4-bits dynam ic random access m em ory RAM port and a 5 12-words by 4-bits static serial access memory (SAM ) port. The TC524258B

TDA1301T

Abstract: west 6500 PID tda1302 B302
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA1301T Digital servo processor DSIC2 Product specification File under Integrated Circuits, IC01 Philips Semiconductors January 1996 Philips Semiconductors Product specification Digital servo processor (DSIC2) TDA1301T FEATURES

Contextual Info: in tb l. 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ju,s Typical Byte-Program — 0.5 Second Chip-Program ■ Command Register Architecture for Microprocessor/Microcontroller

TDA8362 B

Abstract: TDA8361 ic tda8361 TDA8362 PROTECTION PIN NUMBER OF TDA8361 TDA8360 TDA8361 TDA8362 Philips TDA8362 TDA8361 5 y TDA8362 a TDA8360
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8360; TDA8361; TDA8362 Integrated PAL and PAL/NTSC TV processors Objective specification File under Integrated Circuits, IC02 Philips Semiconductors March 1994 Philips Semiconductors Objective specification Integrated PAL and PAL/NTSC TV

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog