IC 5101 RAM Search Results

5101 RAM

Abstract: intel 2101 Static RAM
Contextual Info: intei P/N Typ. Current @ 2V Typ. Current @ 5V PA (HA) 5101L 5101L-1 5101L-3 0.14 0.14 0.70 • Single +5V Power Supply ■ Ideal for Battery Operation (5101L) 0.2 0.2 1.0 RAM 5101 FAMILY x 256 x 4 BIT STATIQXMOSjRAM Max Access (ns) 650 450 650 ■ Directly TTL Compatible:

5101ab

Abstract: ic 5101 ram 5101 cmos ram L21S
Contextual Info: in t e i M5101-4, M5101L-4 256 x 4 BIT STATIC CMOS RAM Single +5V Power Supply Military Temperature Range: -55° C to +125° C Ultra Low Standby Current: 200nA/Bit C E 2 Controls Unconditional Standby Mode Fast Access Time — 800ns Three-State Output T h e Intel M 5101 is an u ltra -lo w p o w er 2 5 6 X 4 C M O S R A M sp e cifie d over th e - 5 5 ° C to + 1 2 5 °C tem p e ra tu re range. T h e R A M

Contextual Info: In t e l M5101-4, M5101L-4 256 X 4 BIT STATIC CMOS RAM • Military Temperature Range: -5 5 °C to +125°C Single +5V Power Supply ■ Ultra Low Standby Current: 200nA/Bit CE 2 Controls Unconditional Standby Mode ■ Fast Access Time — 800ns Three-State Output

UM5101

Abstract: ums 3691
Contextual Info: □ M C UM5101 WÊÊÊÊÊÊÊÊtÊÊÊBHBÊÊnÊÊÊÊÊÊÊÊSÊÊÊÊÊÊÊÊÊÊÊÊÊÊ Voice Recorder and Reproducer Features • ■ It can be co nnected to one o r tw o D R A M and used to ■ store v o ice data. ■ The B it rates can be selected

N5101

Abstract: n5100 ASJ3 5100H
Contextual Info: MN5100 MN5101 i —m M IC R O HIGH-SPEED 8-Bit AID CONVERTERS N E T W O R K S DESCRIPTION • H igh C on versio n S peed 90 0 n s e c MN5101 1.5 iSec MN5100 • S m all 24-P in D IP • + 1 /2 L S B L in ea rity and N o M issing C od es O ve r Tem p eratu re

HM435101

Abstract: L0145 D11-CR HM43 MCM5101 ram 5101 s5101* ami D11/CR HM6501 MCM5101C65
Contextual Info: r> • r . @ M O T O R O L A \ > >.\ 0 u MCM5101 MCM51L01 2 5 6 x4 BIT STATIC RAM CMOS T h e M C M 5 1 0 1 fa m ily o f C M O S R A M s o ffe r s u ltra lo w p o w e r a n d f u l­ ly s ta tic o p e ra tio n w it h a s in g le 5 -v o lt s u p p ly . T h e C M O S 1 0 2 4 -b it

OPTOCOUPLER 5V

Abstract: ph7d diode ITT 7HO Diode SV-02 LMS100 LHB1 X 25 UMI 2.5A 150 200W-500W LM5020 LM5069
Contextual Info: is a ia | tfê J M 2 0 0 6 0 4 n z . .1 n s . 5L#<$ n ia u - a s * ll# . 2 - 3 * l|g 5 ^ |E fO |E . 4 . 7 ^ ^ S :-§ -« H 4 . S-E\o\ q ^ o j . 8 o > ^ S 5L%\<# A c l $ 1 ^ 4 l ^ § * 1 3 - ^ € 3 1 ^ 3 M ^ ^ ^ ] i r

Contextual Info: y UCC3996 U I M IT R O D E ADVANCE INFORMATION Dual Sequencing Hot Swap Power Manager FEATURES DESCRIPTION • Precise Linear Current Amplifier for high efficiency and low voltage drop The UCC3996 family of Hot Swap Power Managers provides hot swap control, fault handling and power supply sequencing of two positive sup­

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 72 M-bit 256Kx 18x 16d Direct Rambus DRAM Description The Direct Rambus DRAM (Direct RDRAM™) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where

S0211

Abstract: SD306 5200vg
Contextual Info: DIMOS ELECTR ICA L CH A RA CTERISTICS = +25°C unless otherwise specified b v S b <v > IV Drain-To-Substrate SourceTo-Substrate <DSS fc«A) Zero Bias V GB = 0V Source * Open V g b = »v Drain = Open Drain Current IS D iO W nA> Orain-To-Source V d s = +15V

PAL20RA10-20

Contextual Info: Asynchronous PAL20RA10 Ordering Information Features/ Benefits • Programmable clock for asynchronous operation PAL20RA10-20 C NS STD • Programmable asynchronous set and reset • Programmable polarity PROGRAMMABLE ARRAY LOGIC XTTTTT1 • Local and global output enable control

Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M CM 62963 Product Preview 4 K x 1 0 B it S ynchronous S ta tic R A M with Output Registers The MCM62963 is a 40,960 bit synchronous static random access memory organized as >1096 words of 10 bits, fabricated using Motorola's second-generation high-performance

Ba 33 bco

Contextual Info: Direct RDRAM RAMBUS TM 32/36-M bit 256K x16/18x8d ADVANCE INFORMATION O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application

MAXIM Pin Compatible Upgrade for

Contextual Info: ~ Semiconductor, Inc. TC1223 TC1224 50 mA AND 100 mA CMOS LDOs WITH SHUTDOWN FEATURES GENERAL DESCRIPTION • ■ ■ The TC1223 and TC1224 are high accuracy typically ±0.5% CMOS upgrade for older (bipolar) low dropout regulators such as the LP2980. Designed specifically for

Contextual Info: 606HM Transmit Converter Features • Accom m odates either single-rail or dual-rail u n ipolar input ■ Provides the required overshoot on the trailing edge of the DS1 ou tp u t pulse ■ Contains 5 selectable equalizers ■ Provides the line loopback function

intel 8282

Abstract: INTEL I7 microprocessor circuit diagram pin diagram of ic 8088 2817A 8031 Intel Microprocessor 8088 intel microprocessor pin diagram INTEL 2817a 2817A-2 8088 intel microprocessor circuit diagram intel 2816A
Contextual Info: r a iO M O lM W 2817A 16K 2K x 8 ELECTRICALLY ERASABLE PROM 5 Volt Only Operation • Write Protect Circuit to Preserve Data on Power Up and Power Down On-Chip Latches for Direct Microprocessor Interface ■ 10,000 Erase/Write Cycles per Byte Automatic Byte-Erase-before-Write

Contextual Info: ANALOG DEVICES INC M2E » □ A N ALO G D E V IC E S FEATURES 150MSPS Encode Rate Low Input Capacitance: 17pF Low Power: 750mW -S .2 V Single Supply MIL-STD-883 Compliant Versions Available • OOltfiQO OOBObMM 7 » A H A High Speed 8-Bit Monolithic A/D Converter

l441

Contextual Info: August 1994 Micro Linear ML4410 Sensorless Spindle Motor Controller GENERAL DESCRIPTION Th e M L4 4 1 0 provides com plete com m utation for delta or w y e w ound Brushless D C B LD C motors w ithout the need for signals from H all Effect sensors. This IC senses

Contextual Info: TOSHIBA TH M R2 E4Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 18-BIT 128M Bytes Direct Rambus D RAM MODULE DESCRIPTION The THMR2E4Z is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 4 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.

47C400

Abstract: TMP47C423AF lg lcd monitor circuit diagram QFP64 Display 7 segment sec 5101 8 pin configuration LCD 5110 Display 7 segment sec 5101
Contextual Info: TO SH IBA TMP47C423A CMOS 4-BIT MICROCONTROLLER TMP47C423AF The 47C423A is a high speed and high performance 4-bit single chip microcomputer based on the TLCS-47 CMOS series with LCD driver, High Speed Event Counter and Pulse output circuit. PART No. ROM RAM

B49A

Abstract: TSI S 14001
Contextual Info: TOSHIBA THMR1E16E-6/-7/-8 TENTATIVE T O SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-W ORD BY 18-BIT 256M Bytes Direct Rambus D R A M M O D U LE DESCRIPTION The THMRIË16E is a 134,217,728-word by 18-bit direct rambus dynamic RAM module consisting of

Contextual Info: SMJ416160, SMJ418160 1048576 BY 16-BIT DYNAMIC RANDOM-AGCESS MEMORIES _ SQ M S7200- APRH. 1.89».-. REVISED SEPTEMBER 1997 Organization . . . 1048576 by 16 Bits Single 5-V Power Supply ±10% Tolerance Performance Ranges: ACCESS ACCESS ACCESS TIME

RDRAM Clock

Abstract: RR15
Contextual Info: Direct RDRAM 64/72-Mbit 256Kx16/18x16d SIEM EN S O I ADVANCE INFORMATION Overview n Uses R am bus Signaling Level (RSL) for up to 800MHz operation Preliminary Data The R am bus Direct RDRAM™ is a general p u rp o se high-perform ance m em ory device suitable for u se in a

infineon TPMS sp37

Abstract: ISO106 smd diode A82 PG-DSOSP-14
Contextual Info: Sensor Solutions for Automotive Applications Vehicle Safety, Body and Powertrain Applications [ www.infineon.com/sensors ] Today semiconductor sensors in cars are widely deployed in safety applications e.g. Anti Blocking System/Vehicle Stability Control, Radar, Airbag or Tire Pressure Monitoring