5101L Search Results

HUWH_5101L

Contextual Info: HUWH-5101L 5.9 Features： Tolerance is 0.1mm unless otherwise noted. • Lighting color：White 1.0 5.0 • Device Outline：Φ5mm Round Type 25.4 Min 2.54 • Lens Type：Water Clear 8.6 1.5 Ta = 25℃） Absolute Maximum Ratings Series Symbol Testing Condition

HUUV-5101L

Contextual Info: ROITHNER LASERTECHNIK office@roithner-laser.com www.roithner-laser.com Vienna, Austria Tel.: +43 1 586 52 43-0 Fax: +43 1 586 52 43 44 Product Specification HUUV-5101L 5.9 Features: Tolerance is 0.1mm unless otherwise noted. l Lighting color: Ultraviolet 1.0

5101 RAM

Abstract: intel 2101 Static RAM
Contextual Info: intei P/N Typ. Current @ 2V Typ. Current @ 5V PA (HA) 5101L 5101L-1 5101L-3 0.14 0.14 0.70 • Single +5V Power Supply ■ Ideal for Battery Operation (5101L) 0.2 0.2 1.0 RAM 5101 FAMILY x 256 x 4 BIT STATIQXMOSjRAM Max Access (ns) 650 450 650 ■ Directly TTL Compatible:

HUWH-5101L

Contextual Info: ROITHNER LASERTECHNIK office@roithner-laser.com www.roithner-laser.com Vienna, Austria Tel.: +43 1 586 52 43-0 Fax: +43 1 586 52 43 44 Product Specification Device Part No:HUWH-5101L 5.9 Features： Tolerance is 0.1mm unless otherwise noted. z Lighting color：White

HUBL-5101L

Abstract: 5101L
Contextual Info: Product Specification HUBL-5101L 5.9 Features： Tolerance is 0.1mm unless otherwise noted. z Lighting color：Blue 1.0 2.54 5.0 z Lens Type：Water Clear 25.4 Min z Device Outline：Φ5mm Round Type 8.6 1.5 Absolute Maximum Ratings （Ta = 25℃） Characteristics

5101 RAM

Abstract: static 5101 M5101 M5101-4 M5101L-4 5101 cmos ram
Contextual Info: in te i M 5101-4, M 5101L-4 256 X 4 BIT S TA TIC CMOS RAM • M ilitary Temperature Range: -55° C to +125° C Single + 5 V Power Supply ■ Ultra Low Standby Current: 200nA /B it C E 2 Controls Unconditional Standby Mode ■ Fast Access Time — 800ns Three-State Output

5101LP-1

Abstract: ic 5101 ram 5101L-1
Contextual Info: MITSUBISHI LSIs M5L 5101L P -1 1 0 2 4 -B IT 2 5 6 -W O R D B Y 4 -B IT CM O S STATIC R A M DESCRIPTION This is a 256-w o rd by 4 -b it static R A M fabricated w ith the silicon-gate CM OS process and designed fo r low power dis­ PIN CONFIGURATION (TOP VIEW)

5101L

Contextual Info: MITSUBISHI LSI« M 5L 5101LP-1 1024-BIT 256-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION This is a 256-word by 4-bit static RAM fabricated with the silicon-gate CMOS process and designed for low power dis­ PIN CONFIGURATION (TOP VIEW) sipation and easy application of battery back-up.

5101 RAM

Abstract: M5101-4 M5101 ram 5101 M5101L-4 5101 intel
Contextual Info: intei M 5101-4, M 5101L-4 2 5 6 x 4 BIT S TA TIC CMOS RAM Single +5V Power Supply Military Temperature Range: -55° C to +125° C Ultra Low Standby Current: 200nA/Bit CE 2 Controls Unconditional Standby Mode Fast Access Time — 800ns Three-State Output Th e In te l M 5101 is an u ltra -lo w p o w e r 2 5 6 X 4 CM OS R A M sp ecifie d over th e - 5 5 ° C to + 1 2 5 ° C te m p e ra tu re range. Th e R A M

011kHz

Contextual Info: Product Specification HSBL-5101L 5.9 Features： Tolerance is 0.1mm unless otherwise noted. z Lighting color：Blue 1.0 2.54 5.0 z Lens Type：Water Clear 25.4 Min z Device Outline：Φ5mm Round Type 8.6 1.5 Absolute Maximim Ratings （Ta = 25℃） Characteristics

5101 RAM

Abstract: ram 5101 intel 5101 intel 2101 5101L ram 5101L-1 intel 2101 Static RAM 5101L-3 5101 intel 5101L
Contextual Info: intei 5101 FAMILY ^ 256 x 4 BIT STATIQX M O S jR A M P/N Typ. Current @ 2V Typ. Current @ 5V PA (HA) Max Access (ns) 0.14 0.2 0.2 1.0 650 450 650 5101L 5101L-1 5101L-3 0.14 0.70 •Single +5V Power Supply ■ Ideal for Battery Operation (5101L) ■ Directly TTL Compatible:

POWER MODULE SVI 3101 D

Abstract: bc power module svi 3101 d SVI 3206 SVI 3101 POWER MODULE SVI 3101 temperature digital display JUMO Lan M UAA 1004 DP tda 8210 INTERFACING OUTPUT DISPLAYS 8212 TDA 9394
Contextual Info: \ V* %%ŸÎ\ \ k A. ' In December 1973 Intel shipped the first 8-bit, N-channel microprocessor, the 8080. Since then it has become the most widely usea microprocessor in the industry. Applications of the 8080 span from large, intelligent systems terminals to decompression computers for deep sea divers.

UPD5101L

Abstract: 5101L PD5101L PD5101 d5101l 5101L-1
Contextual Info: 5101L SEC N E C E le c tr o n ic s U S A In c . m P D 51 o i h Microcomputer Division 1024 BIT 256x4 ST A T IC C M O S RAM DESCR I P T I O N T h e /5101L and p P D 5 1 0 1 L -1 are v e ry lo w p o w e r 1024 b it (2 56 w o rd s b y 4 bits) sta tic C M OS R an d o m Access M e m ories. T h e y m e et th e lo w p o w e r re q u ire m e n ts o f

la 76805 volt on pin

Abstract: intel 8708 eprom M3002 Pulse M3001 eprom 8708 2316a rom UPP-103 interfacing 8275 crt controller with 8086 intel 1402a Pascall
Contextual Info: Intel Corporation 3065 Bowers Avenue • Santa Clara, CA 95051 Telephone: 408 987-8080 TWX: 910-338-0026- Telex: 34-6372 inter Component Data Catalog 1978 Numerical and Functional Indexes 1 General Information 2 Random Access Memory 3 Read Only Memory 4

Contextual Info: 0.364 [9.24] 1/4-40NS SPECIFICATIONS FUNCTION: 1P2T ON-ON RATINGS: 5A 125 VAC 2A 250 VAC 5A 28 VDC CONTACT RESISTANCE: 10mfi Max. ot 2-4VDC INSULATION RESISTANCE: 1.OOOMii Min. DIELECTRIC STRENGTH: 1.500VAC for 1 Minute ELECTRICAL LIFE: 50,000 Cycles at Full Load

Contextual Info: In t e l M5101-4, 5101L-4 256 X 4 BIT STATIC CMOS RAM • Military Temperature Range: -5 5 °C to +125°C Single +5V Power Supply ■ Ultra Low Standby Current: 200nA/Bit CE 2 Controls Unconditional Standby Mode ■ Fast Access Time — 800ns Three-State Output

S5101L-3

Abstract: S5101L-1
Contextual Info: AMI S5101 AMERICAN MICROSYSTEMS. INC. 1024 BIT 256X4 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The AMI S5101 family of 256x 4-bit ultra low power CMOS RAMs offers fully static operation with a single + 5 volt power supply. All inputs and outputs are direct­

5101 RAM

Abstract: Intel 4289 CD4011AE Intel mcs-40 intel 4002 intel 2101 Static RAM MCS 4040 ttl 7404 draw pin configuration of ic 7404 4011AE
Contextual Info: irrte1 « In te l C o rp o ra tio n 1975 APPLICATION NOTE AP-12 Contents Designing Non-Volatile Memory Systems with Inters 5101 RAM IN T R O D U C T IO N . 1 D E V IC E D E S C R IP T IO N .

Contextual Info: PRODUCTS TYPE MULTI-LAYER CERAMIC CHIP CAPACITOR PAGE M C H 2 1 Series P R O D U C T S : HULTI-LAYER CERAMIC CHIP CAPACITOR MCH21 Series DESIGN CHECK APPROVAL / DATE: May. 6th . 2003 SPECIFICATION No.: S P - M C H 2 1 - 0 0 1 E Jf. REV. A TSZ22111-03 2012 0805 Size

LH5101-45

Abstract: PCD5101 LH5101S M5L5101LP-1 rca cdp1822 HM435101P HM435101P-1 LH5101L3 lh5101 5101L
Contextual Info: - IK St iâKIcS £ tfc ÍT CC> x TAAC max ns TCAC max (ns) TOE max (ns) 'i 7 TOH •in (ns) CMOS f y TOD max (ns) / S t a t i c If RAM ( 2 5 6 x 4 ) m 1i TWP min (ns) TDS min (ns) TDH min (ns) TWD rain (ns) TWR max (ns) V D D or V C C (V) 22PI N m I DD lax

Intel mcs-40

Abstract: intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40
Contextual Info: PRIC E 15 00 memory design handbook m in ia i O k p a r » lio n 1 0 7 7 INTRODUCTION The Intel Memory Design Handbook contains information on the use of Intel’s memory components and support circuits in system application. It is intended to aid the system designer to gain a thorough

Contextual Info: 0.364 [9.24] 1/4-40NS SPECIFICATIONS FUNCTION: 1P2T ON-ON RATINGS: 0.4VA Maximum at 20V AC or DC Maximum CONTACT RESISTANCE: 10mfi Max. at 2-4VDC INSULATION RESISTANCE: 1,OOOM£i Min. DIELECTRIC STRENGTH: 1.500VAC for 1 Minute ELECTRICAL LIFE: 50,000 Cycles at Full Load

intel 2102 Static RAM

Abstract: M2102A 2107B-6 abb inverter manual acs 800 display 1602A M3101 D1 intel 8008 cpu LCD display 1602A
Contextual Info: in t e l' d a t a c a t a l o g Intel Corporation 3065 Bowers Ave. Santa Clara, C A 95051 Tel: 408/246-7501, T W X: 910-338-0026, Telex: 34-6372 1. INDEXES & GENERAL INFORMATION contents Page 1. 2. Indexes and General Information . 1-1

UPD5101L

Abstract: 5101L 5101L-1 mpD5101
Contextual Info: SEC 5101L N E C E le c tr o n ic s U S A In c . m PD51o i h Microcomputer Division 1024 BIT 256x4 ST A T IC C M O S RAM DESCR I P T I O N T h e /5101L and p P D 5 1 0 1 L -1 are v e ry lo w p o w e r 1024 b it (2 56 w o rd s b y 4 bits) sta tic C M OS R an d o m Access M e m ories. T h e y m e et th e lo w p o w e r re q u ire m e n ts o f