IC 30MA Search Results

CMPT6517

Abstract: CMPT6520
Contextual Info: Central TM Semiconductor Corp. 315 R3 28-Mar 2001 SYMBOL VBE (SAT) TEST CONDITIONS IC=30mA, IB=3.0mA MIN MAX 0.90 UNITS V 2.0 V VBE (ON) hFE VCE=10V, IC=100mA VCE=10V, IC=1.0mA hFE VCE=10V, IC=10mA VCE=10V, IC=30mA 30 30 200 VCE=10V, IC=50mA VCE=10V, IC=100mA

2SD2439

Abstract: 2SB1588
Contextual Info: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA

2SD2439

Abstract: 2SB1588
Contextual Info: Equivalent circuit 2SD2439 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1588 V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC 10 A hFE IC=30mA 150min VCE=4V, IC=7A 5000min∗ IC=7A, IB=7mA 2.5max 15.6±0.2 A PC 80(Tc=25°C) W VBE(sat) IC=7A, IB=7mA

2SD2642

Abstract: 2SD2642 equivalent 2sb1687 FM20 transistor 2SB1687
Contextual Info: Equivalent circuit 2SD2642 V VCEO 110 V VEBO 5 V .V BR CEO IC 6 A ICBO Unit VCB=110V 100max µA 100max µA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 16.9±0.3 VEB=5V IC=30mA IEBO 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max

SAP16N

Abstract: SAP16P SAP16N equivalent SAP16 sap16n circuit
Contextual Info: Equivalent circuit SAP16N D E V 5 V IC 15 A IB 1 A 150 Tc = 25°C W 10 mA 150 °C –40 to +150 °C Tj Tstg Unit max 100 µA 100 µA IEBO VEB = 5V VCEO IC = 30mA 160 hFE ✽ VCE = 4V, IC = 10A 5000 VCE (sat) IC = 10A, IB = 10mA 2.0 V VBE (sat) IC = 10A, IB = 10mA

2sd2495 equivalent

Abstract: 2SD2495 2SB1626 FM20
Contextual Info: Equivalent circuit 2SD2495 ICBO VCEO 110 V IEBO VEBO 5 V V BR CEO IC 6 A VCB=110V 100max µA VEB=5V 100max µA IC=30mA 110min V hFE VCE=4V, IC=5A 5000min∗ IC=5A, IB=5mA 2.5max 10.1±0.2 A PC 30(Tc=25°C) W VBE(sat) IC=5A, IB=5mA 3.0max V Tj 150 °C fT VCE=12V, IE=–0.5A

2SD2389

Abstract: 2SB1559 in401
Contextual Info: Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1559 V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max

transistor 2SD2389

Abstract: 2SD2389 2SB1559
Contextual Info: Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1559 V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max

2SD2390 equivalent

Abstract: 2SD2390 2SB1560
Contextual Info: Equivalent circuit 2SD2390 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1560 VCB=160V 100max µA V IEBO VEB=5V 100max µA V V VCEO 150 5 V V(BR)CEO IC=30mA 150min IC 10 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max

2SD2401

Abstract: 2SB1570
Contextual Info: C Equivalent circuit 2SD2401 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1570 2SD2401 Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA V 5 V V(BR)CEO IC=30mA 150min IC 12 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA

2SD2390

Abstract: 2SB1560
Contextual Info: Equivalent circuit 2SD2390 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1560 VCB=160V 100max µA V IEBO VEB=5V 100max µA V V VCEO 150 5 V V(BR)CEO IC=30mA 150min IC 10 A hFE VCE=4V, IC=7A 5000min∗ IB 1 A VCE(sat) IC=7A, IB=7mA 2.5max

SAP16

Abstract: SAP16N SAP16P SAP16N equivalent SAP16*p sap16n circuit
Contextual Info: Equivalent circuit C Application: Audio –160 V –5 V IC –15 A IB –1 A 150 Tc=25°C W 10 mA IEBO VEB = – 5V VCEO IC = – 30mA –160 hFE ✽ VCE = – 4V, IC=–10A 5000 typ max Unit –100 µA –100 µA (36°) V 20000 VCE (sat) IC = – 10A, IB =–10mA

2SD2641

Abstract: 2SB1685
Contextual Info: Equivalent circuit 2SD2641 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1685 Unit V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 IC 6 V V(BR)CEO IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA

transistor 2sb1624 2sd2493

Abstract: 2SB1624 2SD2493 2sd2493 transistor
Contextual Info: Equivalent circuit 2SD2493 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1624 Unit V ICBO VCB=110V 100max µA VCEO 110 V IEBO VEB=5V 100max µA VEBO 5 IC 6 V V(BR)CEO IC=30mA 110min V A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA

Contextual Info: 2SD2589 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1659 VCB=110V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA

3202 a ic

Abstract: SAP09N SAP09P
Contextual Info: Equivalent circuit SAP09N B D Application: Audio V IC 10 A IB 1 A PC 80 Tc = 25°C W 10 mA 150 °C –40 to +150 °C Di IF Tj Tstg typ Unit max 100 µA 100 µA IEBO VEB = 5V VCEO IC =30mA 150 hFE ✽ VCE =4V, IC =6A 5000 VCE (sat) IC =6A, IB =6mA 2.0 V

IE5A

Abstract: Transistor 2Sd2589 2SD2589 2SB1659
Contextual Info: 2SD2589 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1659 VCB=110V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA

Contextual Info: MITSUMI Li-ion Battery Charge Control IC MM3658AR Li-ion Battery Charge Control IC Monolithic IC MM3658AR Outline This IC is a linear charge control IC for 1-cell lithium iron phosphate LiFePO4 battery. The chip temperature detection function can limit the temperature rise in the IC during high power charging

Contextual Info: MITSUMI 300mA Regulator IC MM3464 Series 300mA Regulator IC Monolithic IC MM3464 series Outline This IC is a high speed response 300mA regulator IC with low quiescent current and high ripple rejection. No load input current is 20µA typ. And ripple rejection is 75dB typ.

mm3464

Abstract: MM3464A18 MM3464A30 MM34 MM3464A11 MM3464A33 IC 2576 5.0v SC-82 mitsumi SC82
Contextual Info: MITSUMI 300mA Regulator IC MM3464 Series 300mA Regulator IC Monolithic IC MM3464 series Outline This IC is a high speed response 300mA regulator IC with low quiescent current and high ripple rejection. No load input current is 20µA typ. And ripple rejection is 75dB typ.

MM3464A33

Contextual Info: MITSUMI 300mA Regulator IC MM3464 Series 300mA Regulator IC Monolithic IC MM3464 series Outline This IC is a high speed response 300mA regulator IC with low quiescent current and high ripple rejection. No load input current is 20µA typ. And ripple rejection is 75dB typ.

HI 1000 IC PIN DIAGRAM

Abstract: MM1106 MM1106XD MM1106XF
Contextual Info: IC for System Reset with watchdog timer+battery back-up MM1106 MITSUMI IC for System Reset (with watchdog timer+battery back-up) Monolithic IC MM1106 Outline This IC combines the popular watchdog timer with a battery back-up, resulting in an IC that is easier to use.

Contextual Info: IC for System Reset with watchdog timer+battery back-up MM1106 MITSUMI IC for System Reset (with watchdog timer+battery back-up) Monolithic IC MM1106 Outline This IC combines the popular watchdog timer with a battery back-up, resulting in an IC that is easier to use.

MITSUMI 3465

Abstract: MM3464A33 MM3464A18
Contextual Info: MITSUMI 300mA Regulator IC MM3464 Series 300mA Regulator IC Monolithic IC MM3464 series Outline This IC is a high speed response 300mA regulator IC with low quiescent current and high ripple rejection. No load input current is 20µA typ. And ripple rejection is 75dB typ.