IC 1200 P 60 Search Results

Contextual Info: nixYS Common Cathode Fast Recovery Epitaxial Diode FRED DSEK30 r— v nsM V v RRM V 1200 1200 ~l Type I -N -. f 4 " — A DSEK 30-12A iFAVM ic V,RR M 2x26 A 1200 V t„ 40 ns TO-247 AD Î A A C (TAB) Symbol Test C onditions ^FRMS "^"vj IpAVM ^FRM JPdt P,o,

D61500

Contextual Info: APPENDIX A S P E C IF IC A T IO N S Single-Pulse Peak Current Ratings Per Safety Agency Certification Testing CSAC22.2 VAC Range 120-150 180-300 320-580 620-1000 D58 na na na na D73 1200 1200 na na D61 2000 2000 2000 na Disk Series Designation D71 D62 D69

actel 5962

Abstract: ACTEL 1020B MAX4437 6ba1 5602m e/actel 1240a
Contextual Info: Æ ic te - m H i R e i F P G A ! v 2 .0 s Features 3 2 0 0 DX • H ighly P re d ic ta b le P erform ance w ith 100 Percent A utom atic P lacem ent and Routing • 100 M H z System Logic In teg ratio n • • Device Sizes from 1200 to 20,000 gates

WESTCODE SW

Contextual Info: T E C H N IC A L P U B L IC A T IO N $ WESTCODE SEMICONDUCTORS D P20 ISSUE 2 May, 1989 — - - - - Stud-Base Silicon Rectifier Diodes Type PCN/PCR020 30amperes average: up to 1200 volts Vr r m RATINGS Maximum values at 175°C Tj unless stated otherwise

C45N equivalent

Abstract: general electric c350 C350 cdi dc with scr for 15 ampere, 12 volt C150P C147D TRANSISTOR D1651 General electric SCR C147M C147 C45U
Contextual Info: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S |V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1} 500 -13 00

General electric SCR C147M

Abstract: C147N C147pb SCR C147PB GE C147P GE C150 C147 C52U C147D GE C147S
Contextual Info: 109 PHASE CO N T R O L SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2 N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S |V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1}

General Electric SCR C52T

Abstract: C52 SCR General electric SCR c50 General electric SCR C52 c52m 50 20 500 C52T scr c52u scr C50 C52 "SCR" C52E
Contextual Info: 109 PHASE CO N T R O L SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2 N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S | V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1}

c45 scr

Abstract: scr C50 C46U C46C C46M TRANSISTOR D1651 2N1909 C147 C147U C350
Contextual Info: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 2N 1909-16 2 N 1792-98 JEOEC C 60, 62 C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S |V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1} 500 -13 00

C520D

Abstract: C530A C600PB scr high current C520C C530 C530B C501PS C520A GE SCR 1000
Contextual Info: PHASE CONTROL SCR’s HIGH CURRENT 850 TO 1400 AM PERES GE TYPE C501 C530 C520 C600 C601 C602 700 -1700 100 - 600 100 - 400 500 - 1200 1100-1700 1600 - 2600 E L E C T R IC A L S P E C IF IC A T IO N S V O LTAG E RANGE FORW ARD C O N D U C T IO N I t |»ms

Contextual Info: HIGH VOLTAGE, HIGH CURRENT ULTRA-FAST RECOVERY SILICON RECTIFIER DIODES P RV 1200 1500 1800 TYPE 3RUS2120 3RUS4120 3RUS2150 3RUS4150 3RUS2180 3RUS4180 ELECTRICAL C H A R A C T E R IST IC S at T a =25°C Unless Otherwise Specified 3RUS2 3RUS4 1.25 Amp 1.50 Amp

C60N

Abstract: GE C150e GE C150 ge c46b C145T GE C150M C45U scr c52u C60M C150 SCR
Contextual Info: PHASE CONTROL S C R ’s HIGH CURRENT 55 TO 200 AM PERES C45, 46 GE T Y P E C145 C50, Ü2 C150, 152 2N1909-1 G 2N1792-98 JEDEC C60, 62 C350 C178 2N2023-30 ELEC TR IC AL SPECIFICATIONS 25*600 VOLTAGE RANGE 500-1200 25-800 500-1300 25-600 500-1300 500-1300 110

supercapacitor

Contextual Info: PART NUMBER: 128DCA2R7RW AXIAL LEADED SUPERCAPACITOR P a rts a re R oH S c o m p lia n t !j 3 ELEC TR IC AL SPECIFICATIONS C apacitance: 1200 F T ole ra n ce: -0 % . +20 T em p e ra tu re range: -40°C to +65°C WVDC: 2.7 Volts DC ESR AC :0.4 milliOhms at 120 Hz and 20°C

C45E

Abstract: C147U C45U C45PB C150PA scr stud 280 C150PB C52T N2030 C46D
Contextual Info: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C 45, 46 GE TYPE C147 C 5 0 , 52 C l 50, 152 2N1909-16 2N 1792-98 JE O E C C350 C 6 0 , 62 2N 2023-30 E L E C T R IC A L S P E C IFIC A T IO N S | V O LTA G E RAN GE 2b 1200 II 25-1200 2 5 120Ü 500-1300 25 500 1}

MC145447

Abstract: MC145447P MC145447DW CSB455J
Contextual Info: Order this document by MC145447/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC145447 Calling Line Identification CLID Receiver with Ring Detector P SUFFIX PLASTIC DIP CASE 648 The MC145447 is a silicon gate HCMOS IC designed to demodulate Bell 202 and V.23 1200-baud FSK asynchronous data. The primary application for this

Contextual Info: ÜË GEC P L E S S E Y o c t o b e r 1995 SE M IC OND UC TOR S DS4231 -2.2 DSF21060SV FAST RECOVERY DIODE KEY PARAMETERS vR R M 6000V 1690A | A V 16000A FSM 1200(lC Q r 6 .5]lls *rr APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ f Inverters.

FZ 77 1000

Abstract: IGBT FZ 1200 FZ 77 FF R 1200 FZ200
Contextual Info: IGBT modules VcES IC R M lc v CEsal to n ts tf R th J C Wj ' l l i • DC V A '• i * 2 5 °C . ty p t., = 2 5 °C , ty p 'v, 2 5 °C , ly p p e r a rm V us us MS ° C /W °c tp = 1 ms •vi = 2 5 °C A ty p Dual modules FF 15 R 12 KF 1200 15 30 3 0.4 0.5

diode c648

Abstract: C648 GE SCR 1000 AMP scr c385 GE SCR C648 c358 C612 C613 C648E 25C312
Contextual Info: 700 TO 1500 A M P E R E S C648 C612 C613 C712 A M P L IF Y IN G G A TE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500 1200 1500-1800 1150 700 800 1150 700 800 1500 - 800 1500 GE TYPE CONSTRUCTION ELE C T R IC A L SPECIFIC AT IO N S

H12CD4850

Abstract: H12CA4850 H12CA4890 H12CD4850F H12CD4890 RS-443
Contextual Info: Series H12C 50-90Amp • 480 Vac • AC Output • • • • 1200 Volt Blocking Panel Mount Up to 660 Vac Zero Voltage and Random Turn-On • SCR Output • Integrated Overvoltage Protection by Automatic Self Turn-On Suffix P High voltage relays use IC driven circuits for switching loads up to 660

alcoa electrical joint compound

Abstract: SF1154 C613 3M Electric Joint Compound C612 C648 C648E C648M C648P C648T
Contextual Info: 700 TO 1500 AMPERES C648 C612 C613 C712 A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500 1200 1 5 0 0 -1 8 0 0 GE TYPE CONSTRUCTION ELE C T R IC A L SPECIFIC AT IO N S VO LTAG E RANG E FO RW ARD CONDUCTION . 'T R M S

WESTINGHOUSE DIODE

Abstract: westcode sw 1035A
Contextual Info: T E C H N IC A L P U B LIC A T IO N WESTCODE ® SEMICONDUCTORS D P55 ISSU E 1 March, 1980 Stud-Base Silicon Rectifier Diodes Type PCN/PCR055 75amperes average: up to 1200 volts VRRM R A T IN G S Maximum values at 175°C Tj unless stated otherwise R A T IN G

SW06PCR030

Contextual Info: T E C H N IC A L P U B LIC A TIO N $ WESTCODE SEMICONDUCTORS D P30 ISSUE 2 May, 1989 Stud-Base Silicon Rectifier Diodes Type PCN/PCR030 30amperes average: up to 1200 volts Vr r m RATINGS Maximum values at 175°C Tj unless stated otherwise R A T IN G C O N DITIO N S

westcode england diode stud

Abstract: SU3A
Contextual Info: T E C H N IC A L P U B LIC A TIO N $ WESTCODE SEMICONDUCTORS D P30 ISSUE 2 May, 1989 Stud-Base Silicon Rectifier Diodes Type PCN/PCR030 30amperes average: up to 1200 volts Vr r m RATINGS Maximum values at 175°C Tj unless stated otherwise R A T IN G C O N DITIO N S

WESTINGHOUSE DIODE

Abstract: WESTINGHOUSE diode DO
Contextual Info: T E C H N IC A L P U B LIC A TIO N WESTCODE ® SEMICONDUCTORS D P40 ISSUE 1 March, 1980 Stud-Base Silicon Rectifier Diodes Type PCN/PCR040 70amperes average: up to 1200 volts R ATING S Maximum values at 175°C Tj unless stated otherwise R A T IN G C O N D ITIO N S

triacs BTW 30

Abstract: AL 2450 dv triacs BTW 30 800 BTW 67 btw 600 btw 20 450
Contextual Info: Æ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MEDIUM POWER THYRISTORS & TRIACS < RjooMULggirmiDSS 100 A S T A N D A R D T H Y R IS T O R S P L A S T IC C A S E Tamb = Type '0 VRRM >t s m VDRM See NOTE 30 Arms / Tease = 75°C Tj 16 BTW 68-200 —»-1200