IBM 1MX4 Search Results

Contextual Info: IBM 11D1475B IBM 11E1475B IBM11D2475B IBM11E2475B 1M/2M x 32 Desktop ECC-on-SIMM Features • 72-Pin JED EC Standard Single-ln-Line Memory Module • High Performance C M O S process • Single 5V, ± 0.25V Power Supply • Performance: • All inputs & outputs are fully TTL & C M O S

IBM 1Mx4

Abstract: 1MX16
Contextual Info: 4. 8/4 Byte DIMM CROSS REFERENCE 8 Byte DIMM TYPE 1Mx64 P a rity Voltage 5V Com pany SEC 3.3V NEC Hitachi SEC 1Mx72 ( P a r ity ) 5V SEC 1 Mx72 (E C C ) 5V IBM SEC 3.3V NEC IBM Hitachi SEC 2M x64 ( P a r ity ) 2M x72 ( P a r ity ) 2M x72 (E C C ) 5V 3.3V

IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.

UTC 1316

Abstract: cq 0765 rt 82c386 cq 0765 8088 motherboard schematics CTC 1351 transistor CTC 1351 SCAT-SX CTC 1351 data sheet 82C836
Contextual Info: • 82C836 Single-Chip 386sx AT 82C836 The 82C836, also known as SCATsx, is a VLSI device that incorporates most of the motherboard logic required to build a low cost, highly integrated, IBM PC AT compatible computer using the 80386sx. It is designed to be used in

D2320B

Contextual Info: IB M 11 D2320B C IB M 11E2320BC 2M x 32 D R A M M odule Features All inputs & outputs are fully TTL & CMOS compatible Fast Page Mode access cycle Refresh Modes: RAS-Only and CBR 1024 refresh cycles distributed across 16ms 10/10 Addressing Row/Column Optimized for use in byte-write non-parity appli­

Contextual Info: IBM11 D1475B IBM11 E1475B IBM11D2475B IBM11E2475B 1M/2M x 32 Desktop ECC-on-SIMM Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: : -6R : rac RAS Access Tim e ; 60ns : tc A C CAS Access Tim e : 18ns : I U a I rc t|HPC • High Performance CMOS process

Contextual Info: IB M 1 1 D 1 3 6 0 E IB M 1 1 D 2 3 6 0 E IB M 1 1 E 1 3 6 0 E IB M 1 1 E 2 3 6 0 E 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 I : tRAc i RAS Access Time 60ns ; tcAc : CAS Access Time 15ns 70ns I I S 18ns j

SIMM 80 jedec

Contextual Info: IBM11D1320B1M x 3210/10, 5.0V, Sn/PbMMDS16DSU-001021720. IBM11D2320B2M x 3210/10, 5.0V, Sn/PbMMDS16DSU-001021720. IBM11D1320B IBM11D2320B 1M/2M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time

Contextual Info: IBM11D1360E1M 10/10, 5.0V, Sn/PbMMDS25DSU-001021620. x 36 QC10/10, 5.0V, Sn/PbMMDS25DSU-001021620. IBM11E1360E1M x 36 QC10/10, IBM11E2360E2M 5.0V, AuMMDS25DSU-001021620. x 36 QC10/10, 5.0V, Au MMDS25DSU-001021620. IBM11D2360E2M x 36 QC IBM11D1360E IBM11D2360E

code edo

Abstract: edo dram 60ns 72-pin simm IBM 1Mx4
Contextual Info: IBM11D1475B 10/10, 5.0V, Sn/Pb, 1M xAuMMDS47DSU-021044622. 3210/10, 5.0V, Sn/Pb, AuMMDS47DSU-021044622. IBM11E1475B 2M x 3210/10, IBM11E2475B2M 5.0V, Sn/Pb, x 3210/10, AuMMDS47DSU-021044622. 5.0V, Sn/Pb, AuMMDS47DSU-021044622. IBM11D2475B1M x 32 IBM11D1475B IBM11D2475B

Contextual Info: IBM11D2320BD2M x 3210/10, 5.0V, Sn/Pb. IBM11E2320BD2M x 3210/10, 5.0V, Au. IBM11D1320B IBM11D2320B 1M/2M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time

edo dram 60ns 72-pin simm

Contextual Info: IBM11D1325B1M x 3210/10, 5.0V, Sn/PbMMDS16DSU-001045421. IBM11D2325B2M x 3210/10, 5.0V, Sn/PbMMDS16DSU-001045421. IBM11D1325B IBM11D2325B 1M/2M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line Memory Modules • Performance: -60 -70 tRAC RAS Access Time

1829pf

Contextual Info: IBM11D1360Q1M 10/10, 5.0V, Sn/PbMMDS25DSU-001023221. x 36 QC10/10, 5.0V, Sn/PbMMDS25DSU-001023221. IBM11E1360Q1M x 36 QC10/10, IBM11E2360Q2M 5.0V, Au MMDS25DSU-001023221. x 36 QC10/10, 5.0V, Au MMDS25DSU-001023221. IBM11D2360Q2M x 36 QC IBM11D1360Q IBM11D2360Q

IBM REV 2.8

Abstract: 4620 IBM11M4730C4M
Contextual Info: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11M1735B 1M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx72 Extended Data Out Page Mode DIMM • Performance: -60 -70 RAS Access Time 60ns 70ns CAS Access Time 20ns 25ns

Contextual Info: IBM11M2720Q2M x 72 QC10/10, 5.0V, AuMMDL22DSU-001015828. IBM11M2720Q 2M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx72 Dual Bank Fast Page Mode DIMM • Performance: -60 -70 • System Performance Benefits:

4346-01

Contextual Info: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D1365E IBM11D2365E 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time 15ns

Contextual Info: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D1360Q IBM11D2360Q IBM11E1360Q IBM11E2360Q 1M/2M x 36 DRAM Module Features • Single 5V, ± 0.5V Power Supply • All inputs & outputs are fully TTL & CMOS compatible • Low active current dissipation

IBM11M4730C4M

Contextual Info: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11M1645B 1M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 RAS Access Time 60ns 70ns CAS Access Time 20ns 25ns

IBM 1Mx4

Contextual Info: IB M 1 1 D 1 4 8 0 B A IB M 1 1 E 1 4 8 0 B A 1M x 36 ECC-on-SIMM Features Single-error-correct SEC high-speed ECC • 72-Pin JEDEC-Standard Single In-Line Memory Module algorithm • Performance: Single 5V ± 0.25V Power Supply All inputs & outputs are fully TTL & C M O S

Contextual Info: IBM11M1730BB1M x 72 E10/10, 3.3V, Au. IBM11M1730B IBM11M1730BB 1M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx72 Fast Page Mode DIMM • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time

Contextual Info: IBM11D2320BD2M x 3210/10, 5.0V, Sn/Pb. IBM11E2320BD2M x 3210/10, 5.0V, Au. IBM11D1325B IBM11D2325B 1M/2M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line Memory Modules • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time

Contextual Info: IBM11D1360Q IBM11E1360Q IBM11D2360Q IBM11E2360Q 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 : W c ; RAS Access Time 60ns 70ns I tcAC i CAS Access Time 15ns 20ns 30ns 35ns j Iaa !Access Time From Address

Contextual Info: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D1360E IBM11D2360E IBM11E1360E IBM11E2360E 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns

Contextual Info: Discontinued 9/98 - last order; 3/99 last ship IBM11N1645L1M x 64 E10/10, 3.3V, Au, EDOMMDL24DSU-001020631. IBM11N1735Q1M x 72 E10/10, 3.3V, Au, EDOMMDL24DSU-001020631. IBM11N1645L IBM11N1735Q 1M x 64/72 DRAM Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte