IBM 1M X 4 Search Results

Contextual Info: IBM 11D1475B IBM 11E1475B IBM11D2475B IBM11E2475B 1M/2M x 32 Desktop ECC-on-SIMM Features • 72-Pin JED EC Standard Single-ln-Line Memory Module • High Performance C M O S process • Single 5V, ± 0.25V Power Supply • Performance: • All inputs & outputs are fully TTL & C M O S

Contextual Info: IWKIC MX83C1 BEE IBM-Bit Mask ROM MB/3BBit Output FEATURES ORDER INFORMATION • Bit organization 1M x 16 word mode) 512K x 32 (double word mode) Part No. • Fast access time Random access: 100ns (max.) MX23C1622MC-10 • Page • Current 8 double words per page

a8303

Contextual Info: IBM 0 1 1 6 1 6 0 M IBM 0 1 1 6 1 6 0 P 1M x 16 Low Power DRAM Features • 1 ,0 4 8 ,5 7 6 w ord by 16 bit organization • S ingle 3 .3 V ± 0 .3 V or 5 .0 V ± 0 .5 V pow er supply • 4 0 9 6 refresh cy cles/256m s • High P erform ance: Low P ow er Dissipation

442250

Contextual Info: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1M x 16 12/8 EDO DRAM Features • 1 ,0 4 8 ,5 7 6 w o rd by 16 bit o rg a n iz a tio n • • S in g le 3 .3 V + 0 .3 V or 5 .0 V + 0 .5 V p o w e r s u p p ly . .n ^ S ta n d a rd P o w e r S P a n d L o w P o w e r (LP )

1314E

Contextual Info: IB M 1 1 N 1 6 4 5 L IB M 1 1 N 1 7 3 5 Q 1 M x 6 4 /7 2 D R A M M o d u le Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • Optimized for byte-write, non-parity, or ECC applications. • 1 Mx64, 1Mx72 Extended Data Out Page Mode

014400m

Contextual Info: IBM014400M IBM014400P 1M x 4 Low Power DRAM Features • 1,048,576 word by 4 bit organization • Power Supply: 3.3 ± 0.3V or 5.0 ± 0.5V • 1024 Refresh Cycle Rate/128m s Low Power Dissipation - Active max - 85m A/70m A (5.0V) - 95m A/80m A (3.3V) - Standby (TTL Inputs) - 1 ,0mA (max)

IBM0144051M

Abstract: IBM014405B1M IBM014405M1M IBM014405P1M
Contextual Info: IBM0144051M x 410/10, 5.0V, EDO. IBM014405P1M x 410/10, 3.3V, EDO, LP, SR. IBM014405M1M x 410/10, 5.0V, EDO, LP, SR. IBM014405B1M x 410/10, 3.3V, EDO. IBM014405 IBM014405B 1M x 4 10/10 EDO DRAM Features • 1,048,576 word by 4 bit organization - Active max

IBM0144001M

Abstract: IBM014400B1M IBM014400M1M IBM014400P1M
Contextual Info: IBM0144001M x 410/10, 5.0V. IBM014400P1M x 410/10, 3.3V, LP, SR. IBM014400M1M x 410/10, 5.0V, LP, SR. IBM014400B1M x 410/10, 3.3V. IBM014400 IBM014400M IBM014400B IBM014400P 1M x 4 10/10 DRAM Features • 1,048,576 word by 4 bit organization • Power Dissipation

DM 4203

Abstract: ns 4203
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ns 4203

Contextual Info: IB M 1 1 M 1 6 4 0 L § € = ¥ ! ^ = -= 7 = 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Fast Page Mode DIMM • Performance: -60 -70 Wc i RAS Access Time 60ns 70ns tcAC i CAS Access Time 20ns 25ns

Contextual Info: IB M 1 1 M 1 6 4 5 B 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module Optimized for byte-write non-parity applications System Performance Benefits: - • 1Mx64 Extended Data Out Page Mode DIMM • Performance: -60

Contextual Info: IBM0116160 IBM0116160M IBM0116160B IBM0116160P 1M x 16 12/8 DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

Contextual Info: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1 M x 16 12/8 EDO DRAM Features 1,048,576 word by 16 bit organization Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply Standard Power SP and Low Power (LP) 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

Contextual Info: = =— ~ s z ~ - -Z _=-Z T IB M 1 1 T 1 6 4 0 L P 1M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts • Optimized for byte-write non-parity applications • Performance:

Contextual Info: IBM11M1645L 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: -Buffered inputs except RAS, Data -Reduced noise (32 W s s ^ C C pins) -4 Byte Interleave enabled -Byte write, byte read accesses

Contextual Info: IB M 1 1 T 1 6 4 0 L P 1M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • Performance: -60 ! -70 ! i^RAC ! R A S Access Tim e

Contextual Info: IBM014440 IBM014440M IBM014440P 1M x 4 10/10 QUAD CAS DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation - Active max - 95 m A / 8 0 mA (3.3V) - 85 mA / 70 mA (5.0V) - Standby Current: TTL Inputs (max) - 2.0 mA (SP version)

Contextual Info: IBM014445 IBM014445B 1M x 4 10/10 QUAD CAS EDO DRAM Features • Standard Power Low Power Dissipation 1,048,576 word by 4 bit organization - Active max - 95 mA / 80 mA (3.3V) - 85 mA / 70 mA (5.0V) QUAD CAS Parity Extended Data Out (Hyper Page) Mode - Standby Current: T T L Inputs (max)

Contextual Info: IBM014445 IBM014445M IBM014445B IBM014445P Preliminary 1M x 4 10/10 QUAD CAS EDO DRAM Features • Power Supply: 3.3V ± 0.3V or 5.0V ± 0.5V • 1,048,576 word by 4 bit organization • Standard Power SP and Low Power (LP) • QUAD CAS Parity • Low Power Dissipation

Contextual Info: IB M 1 3 T 4 6 4 4 M C IB M 1 3 T 1 6 4 9 N C 1M x 64 SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 1 Mx64 Synchronous DRAM SO DIMM • Performance: -10 CAS Latency j Units j 3 jf c K j Clock

Contextual Info: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1 M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

Contextual Info: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1 M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)

Contextual Info: IB M 1 3 T 1 6 4 9 N C 1M x 64 1 Bank SDRAM SO DIMM Features • 144 Pin em erging JE D E C S tandard, 8 Byte Sm all O utlin e D u al-In -lin e M em o ry M odule • P rog ram m a ble O peration: -C A S Latency: 1, 2, 3 • 1 M x64 S ynch ron ou s DR AM SO DIM M

Contextual Info: IBM014400 IBM014400M IBM014400B IBM014400P 1 M x 4 10/10 DRAM Features • 1,048,576 word by 4 bit organization • Power Dissipation - Active max - 85 mA / 70 mA (5.0V) - 95 mA / 80 mA (3.3V) - Standby Current: TTL Inputs (max) - 2.0 mA (SP version) - 1.0 m A(LP version)