I200M Search Results

FUSE f10l 250v

Abstract: ADJUSTABLE VOLTAGE AND CURRENT REGULATOR 12v 30a lambda LMS Zener C218 fbt 073 12v to 230v inverters circuit diagrams sfbt-00 FBL-00-243 FBL-00 FBM-Z
Contextual Info: INSTRUCTION MANUAL FOR REGULATED POWER SUPPLY LL S-7000 SERIES This manual provides instructions intended for the operation of Lambda power supplies, and is not to be reproduced without the written consent of Lambda Electronics. All information contained herein

STV 2268 H

Abstract: RC7315
Contextual Info: General Product Description ♦ High output slew rate 1.8 V/ns typical ♦ Wide output voltage range (-2.5V to +7V), and up to 9.5 Vp-p swings ♦ Three-state/high impedance output ♦ High repetition rate (250 MHz for ECL swings) ♦ Low output offset (20 mV typ.) and output offset drift

inverter klima

Abstract: I200M
Contextual Info: 1 D I 2 M - 1 2 0 2o o a '<•7 — : Outline Drawings 10 13 21 P O W E R T R A N S IS T O R M O D U L E 2Ì ■ 4 t £ : Features High Arm Short Circuit Capability • h F E fr'ffii' High DC Current Gain • 7 ') — Including F reew heeling Diode •

Contextual Info: RC7310 High Speed Driver Features General Product Description ♦ High output slew rate 1.2 V/ns minimum ♦ Wide output voltage range (-3.0V to +8V), and up to 10 Vp-p swings ♦ 250 MHz minimum operation for ECL swings ♦ Wide input common mode range for ease of interface

VTZ330M25

Contextual Info: I Type VTZ MallorY Radial Leaded Capacitors GENERAL SPECIFICATIONS +105°C - Long Life Very Low Impedance and ESR DC Leakage Current: I = .01 CV C = Capacitance in ¡¿F V = Rated Voltage I = Leakage Current in mA QA Stability Test: Apply W VDC for 1,000 hrs if

um61256

Abstract: um61256fs 15 TI07 um61256fs Hitachi DSA0088 Nippon capacitors HM62C3232
Contextual Info: Preliminary HB66C6464BA Series 64K x 64 bits Synchronous Fast Static RAM Module with TAG, Burst Counter and Pipelined Data Output Rev. 0.0 Dec. 29, 1995 Description The HB66C6464BA has been developed as an optimized cache memory solution for 8 Bytes processor application.

Contextual Info: Integrated Devi»ce Technology, Inc. CMOS DUAL-PORT RAM 3.3V, 16K 2K x 8-BIT WITH INTERRUPTS FEATURES: • Low-power operation — ID T 7 1 V 3 2 1 S Active: 2 5 0 m W (typ.) Standby: 3.3 m W (typ.) — ID T 7 1 V 3 2 1 L Active: 25 0 m W (typ.) Standby: 6 6 0 |iW (typ.)

CLC501AID

Abstract: CLC501A8D CLC501AJP
Contextual Info: H W M M High-Speed Output Clamping Op Amp CLC501 |F Ì Comlinear cLJ Corporation pBE APPLICATIONS: FEATURES typical : • residue am plifier in high-accuracy, subranging A/D system s • high-speed com m unications • output clam ping applications • pulse am plitude m odulation system s

Contextual Info: RC7315/T Features General Product Description ♦ High output slew rate 1.8 V/ns typical ♦ Wide output voltage range (-2.5V to +7V), and up to 9.5 Vp-p swings ♦ Three-state/high impedance output ♦ High repetition rate (250 MHz for ECL swings) ♦ Low output offset (20 mV typ.) and output offset drift

um61256

Abstract: um61256fs 15 UM61256fs UM61256F Hitachi DSA0088 Nippon capacitors
Contextual Info: Preliminary HB66C3264BB Series 32K x 64 bits Synchronous Fast Static RAM Module with TAG, Burst Counter and Pipelined Data Output Rev. 0.0 Feb. 02, 1996 Description The HB66C3264BB has been developed as an optimized cache memory solution for 8 Bytes processor application.

Contextual Info: CMOS STATIC RAM 256K 64K x 4-BIT ADVANCED INFORMATION IDT61298 Integrated Device Technology, Inc. FEATURES: _ • Fast Output Enable (O E ) pin available for added system flexibility • High speed (equal access and cycle times) — Military: 2 5 /3 5 /4 5 /5 5 (m ax.)

M208 B1

Abstract: fuji darlington module fuji transistor modules 1di50
Contextual Info: High Hf e Series Darlington Modules Ratings and Characteristics Type Single Darlington Modules 600V Dual Darlington Modules 600V Six Pack Darlington Modules 600V SIL Six Pack Darlington Modules 600V v CE0 sus IV) v CEX(sus) <V) (A) •c hFE (min) (A) VCE

A120C

Abstract: DUT11 micronde
Contextual Info: DETECTEUR COAXIAL HAUTE S E N S IB IL IT E Désignation Série 451 -CARACTERISTIQUES DIMENSIONNELLES R iM mâle Su b vis mâle E N T R E E HF SO RTIE < 3 - 5 d« aana an VIDEO s-Jzl -CARACTERISTIQUES ELECTRIQUES Fraquanoa d 'ut11iaat1on RÜS typique Sansibi1it*

J200M

Contextual Info: ^EDI ED I784M SV ELECIRONCDE9GIS&NC 4Megx8NAND Flash PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

Contextual Info: LMC6762 Dual MicroPower Rail-To-Rail Input CMOS Comparator with Push-Pull Output General Description Features The LM C6762 is an ultra low pow er dual com parator with a maxim um supply current of 10 pA/com parator. It is designed to operate o ver a w ide range of supply voltages, from 2 .7V to

S1998

Abstract: TFK 614
Contextual Info: HIGH-SPEED 32K x 8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT709079S/L FEATURES: • True Dual-Ported memory cells which allow simultaneous access of the same memory location • High-speed clock to data access — Commercial: 9/12/15ns max.

2sc1093

Abstract: 2SC1026 2SC1015 2SC1091 2SC1093 equivalent 2SC1015 equivalent 2SC1018 2sc1027 2SC1020 2SC1003
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc 40 4 500 2SC1002 36 4 1A 2SC1003 36 4 2A 2SC1004 1100 5 500 2SC1004A 1500 5 500 2SC1005 1100 5 5A 2SC1005A 1400 5 5A 2SC1006 2SC1007 2SC1008 2SC1008A 2SC1009 2SC1010 50 60 80 100 50 50

Contextual Info: SIPEX CORP C I k « / I U n a W bOE J> m 0203711 0003353 054 H S P X SP-2500/02/05 v A * C o rp o ra tio n ^ Precision, High Slew Rate Operational Amplifiers SIGNAL PROCESSING EXCELLENCE T -7 « - o 7 - » 0 Features • 30 V/|xS Slew Rate • 10 nA Offset Current

SL5010

Abstract: SL5010P piezo ceramic transducer piezoceramic
Contextual Info: SL5010P Semiconductor TONE RINGER WITH BRIDGE DIODE Description The SL5010P is a bipolar IC designed to replace the mechanical bell in telephone sets. It generates two analog tones, and a warble frequency to drive either directly a piezo-ceramic transducer or a small loudspeaker in response to ringing signal on the telephone line.

DI200

Abstract: 1DI200M-120 M109 T151 b3171 BO-120
Contextual Info: 1 D I 2 M 2 0 2o o a - 1 '< • 7 — : Outline Drawings P O W E R T R A N S IS T O R M O D U L E 10 13 21 2Ì ■ 4 t £ : Features High Arm S hort Circuit Capability • h F E fr'ffii' High D C C urrent Gain • 7 ') — Including F re e w h e e lin g Diode

KIA2576

Contextual Info: KIA2576FP/PI00 ~ KIA2576FP/PI12 SEM ICO NDUCTO R TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT 5 2k H z 3 A S tep -D o w n D C /D C C onverter. The KIA2576 series are monolithic IC that design for a step-down DIM DC/DC converter,and own the ability o f driving a 3A load w ithout

lb902

Abstract: LCD 7 segment display with 13 pins lb8100m LCD display controller 40 pin dip LB8555M LB9051 LC7943 LC7730 MSM5298 LC7942A
Contextual Info: Continued from preceding' pag e. SANYO SEMICONDUCTOR CORP 32E D 7TT7D713 0 a 0 7 S b 7 LCD CONTROLLERS, DRIVERS monolithic integrated circuit B ~~/3 f'C a s e V. T acka^. Pins & Package • Circuit Functions & Applications ï] . Variation ît Së LA5640N