EDI784MSV50BC Search Results

TA 7609

Contextual Info: EDI784MSV 4Megx8 NAND Flash PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic Features • Single 3.3 - Volt Supply • Separate Output Buffer power supply 3.3V or 5V • Organization Memory Cell array (4M+128K) bit x 8bit Data Register (512 +16) bit x 8 bit

Contextual Info: ^EDI E D I788M S V 8Megx8 NAND Flash ElÉCTUONC DESICN& HC. ADVANCED 8Mx8 Bit NAND Flash CMOS, Monolithic ¡Features • Single 3.3 - Volt Supply • Separate Output Buffer power supply 3.3V or 5V • Organization Memory Cell array (8M+256K) bit x 8bit Data Register

J200M

Contextual Info: ^EDI ED I784M SV ELECIRONCDE9GIS&NC 4Megx8NAND Flash PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

EDI784MSV50BB

Abstract: EDI784MSV50BC EDI784MSV50BI
Contextual Info: EDI788MSV 8Megx8 NAND Flash ADVANCED 8Mx8 Bit NAND Flash CMOS, Monolithic Features • Single 3.3 - Volt Supply • Separate Output Buffer power supply 3.3V or 5V • Organization Memory Cell array (8M+256K) bit x 8bit Data Register (512 +16) bit x 8 bit