I1018 Search Results

APPLE A6 CHIP

Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
Contextual Info: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6

su 550

Contextual Info: S H IELD o- lOOOpFj £KV ELECTRICAL SPECIFICATIONS: NO TE S 1.0 PINS WITHDUT E L E C T R I C A L CDNNECTIDN ARE EMITTED, 1.0 TURNS RATIO: P 6 - P 5 - P 4 : (J 6 -J3 ) ( P 3 - P 2 - P 1 ) : (J 2 -J1 ) 1CT : 1± 3% 2CT : 1 ± 3% 2.0 INDUCTANCE: 350uH MIN. @ 0.1V, 100KHz, 8mA DC Bias

IRLM2402

Abstract: c4977 cf325 NEC c5292 VD357 C5292 nec NEC "C4305" cf406 C4934 C5248
Contextual Info: 8 6 7 2 3 4 5 CK APPD FINO M23 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 19 397409 ENGINEERING RELEASED

SI-10183

Contextual Info: lOOOpF j 2 K V SHIELDo- ELECTRICAL SPECIFICATIONS: N D TE S 1.0 TU RN S RATIO: P 6 - P 5 - P 4 (P 3 -P 2 -P 1 : (J6 -J3 : (J2 -J1 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 ) (P 6 -P 4 )

Contextual Info: lOOOpFj £ K V S H IELD o- ELECTRICAL SPECIFICATIONS: NOTES 1 .0 TURNS RATIO: P 6 - P 5 - P 4 (P 3 -P 2 -P 1 ) : (J 6 -J 3 ) : (J 2 -J 1 ) 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE : 5 .0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 )

cf325

Abstract: Broadcom EMI NEC c5292 UE401 c5885 CF-325 CE015 CF219 I1016 C1900 PCB
Contextual Info: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS 2 System Block Diagram FINO-M23 08/26/2005 4 Power Block Diagram FINO-M23 08/26/2005 5 Table Items FINO-M23 10/07/2005 6 FUNC TEST 1 OF 2 FINO-M23 08/26/2005 7 POWER CONN / ALIAS M33-PC 06/20/2005 8