HYUNDAI HY 555 Search Results

Contextual Info: HY51V17400B Series •HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY 51V17400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: • HY UNDAI HYCFLF16008 Series _8MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16008 is the Flash memory card consisting of four 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Rash memory card is optimized for the application of data and file storage in

P55i

Contextual Info: •«}] Y U N D A l HY29F002 Series 256K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements Compatible with JEDEC-Standard Comm ands - Uses software comm ands, pinouts, and

Contextual Info: •HYUNDAI HYCFL001 Series 1MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFL001 is the Flash memory card consisting of two 5V-only 4Mbit 512Kx8 Flash memory chips in a metal plate housing. The Hyundai Flash memory card is optimized for the application of data and file storage in the

Contextual Info: «HYUNDAI HY29F040 Series _512K x 8-bit CMOS 5.0 V-Only, Sector Erase Flash Memory Preliminary DESCRIPTION The HY29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as a 512k X 8 bits each. The HY29F040 is offered in an industry standard 32 pin package which is backward compatible to 1 Megabit and also

HY29F002

Abstract: 29F002T hyundai tv hy 22 f circuit 29F002 HY29F002T PDIP32 PLCC32 TSOP32 hyundai tv circuits P55i
Contextual Info: HY29F002 2 Megabit 256K x 16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current

Contextual Info: HY628100A-I Series •HY UNDAI 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: HYUNDAI 512K x B-bit HYZ9FD4D Series CMOS 5.D V-Dnly, Sector Erase Flash Memory Preliminary D ESCRIPTION The HY29F04D is a 4 Megabit, 5.D Vtolts only Flash m em ory device organized as a 512k X 9 bits each. The HY29FD40 is offered in an industry standard 32 pin package which is backward com patible Id 1 M egabit and also

Contextual Info: •HYUNDAI HY29F800 8 M egabit 1M x 8/512K x 16 , 5V Only, Flash M em ory KEY FEATURES • ■ ■ ■ ■ ■ 5 Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as fast as 55 ns Low Power Consumption

Contextual Info: •HYUNDAI HY29F800 8 M egabit 1M x 8/512K x 16 , 5V Only, Flash M em ory KEY FEATURES • ■ ■ ■ ■ ■ 5 Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as fast as 55 ns Low Power Consumption

Contextual Info: HYU NDA I HV29F08° 8 M eg ab it 1M x 8 , 5 V o lt-o n ly , Flash M em o ry KEY FEATURES 5 Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as fast as 55 ns Low Power Consumption - 15 mA typical active read current

Contextual Info: HY29F080 8 Megabit 1M x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 15 mA typical active read current

A109D

Abstract: max3843 lcd hyundai WWD 3P hyundai hy 555
Contextual Info: HY51V17400B Series •HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY 51V17400B utilizes H yundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

NCC 5551

Abstract: SS LSE 0530 HY6264AL ZT 5551 y626
Contextual Info: HY6264A-I Series •HYUNDAI 8K X CMOS SRAM 8 -b it DESCRIPTION The H Y 6 26 4A -I is a high-speed, low power and 8,192 x 8-bits C M O S static R A M fabricated using H yundai's high performance twin tub C M O S pro cess technology. This high reliability pro cess coupled with innovative circuit

29F080

Abstract: HY29F080T90 1N3064 HY29F080 PSOP44 7915 full pack hyundai tv hy 22 f circuit 3611-1
Contextual Info: HY29F080 Series 8 Megabit 1M x 8 , 5-volt Only, Flash Memory KEY FEATURES n 5-Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as low as 55 ns n Low Power Consumption – 15 mA typical active read current

29F080

Abstract: yura hyundai tv hy 22 f circuit 1N3064 HY29F080 PSOP44
Contextual Info: HY29F080 8 Megabit 1M x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 15 mA typical active read current

HY5118160

Abstract: 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit
Contextual Info: “HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS 2. PRODUCT QUICK REFERENCE GUIDE

Hv62256A

Abstract: hy62256a HV622
Contextual Info: HYUNDAI ELECTRONICS S1E D •* 4b7SOflû DOOllSl T71 ■ H Y N K T HY62256A «HYUNDAI SEMICONDUCTOR 32K X 8-Hit C M O S SRAM M241201B-MAY92 'T % DESCRIPTION ' 2 3 - i3 FEATURES The HY62256A is a high speed low power, 32,768 words by 8-bit CMOS static RAM fabricated using HYUNDAI’S high perfor­

C551

Abstract: HY29F040A P55i
Contextual Info: “H Y U N D A I HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 55 ns access tim e Com patible with JEDEC-Standard Comm ands

Contextual Info: “H Y U N D A I HY29F002 Series 256K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements Com patible with JEDEC-Standard Comm ands - Uses softw are com m ands, pinouts, and

Contextual Info: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current

29F040A

Abstract: hyundai HY29F040A 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits HY29F040AT
Contextual Info: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current

hyundai HY29F040A

Abstract: 29f040a 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits
Contextual Info: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current

1EE12-10-OEC94

Contextual Info: •HYUNDAI HYM572A414A N-Series 4M X 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The H YM572A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY5117404A in 24/28 pin TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22nF