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    HY5116400B Search Results

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    HY5116400BT

    Contextual Info: -HYUNDAI • HY5117400B, HY5116400B 4Mx4, F ait Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mods which is useful for the read operation. The circuit and process design allow this


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    HY5117400B

    Abstract: HY5116400B HY5117400 4Mx4 DRAM
    Contextual Info: HY5117400B,HY5116400B 4Mx4, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


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    hy5117400bhy5116400bhy51174004mx4 dram PDF

    HY5117400BT

    Abstract: HY5117400B
    Contextual Info: HY5117400B, HY5116400B -HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed random access of memory cells within the same row.


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    Contextual Info: “H Y U H DAI HY5116400B Series 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY5116400B is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. T he HY5116400B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


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    hy5116400blogic3001ad42-00-may95mb750fifi+2000ms3bhy5116400bslj PDF

    hy5116400b

    Abstract: OS136 CK37
    Contextual Info: “H Y U N D A I H Y 5 1 1 6 4 0 0 B S e r ie s 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY5116400B is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY5116400B utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


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    hy5116400b1ad42-00-may95hy5116400bjhy5116400bslj+5hy5116400bthy5116400bslthy5116400bros136ck37 PDF

    BEDO RAM

    Abstract: hy5118160b HY512264 HY5117404 HY5118164B
    Contextual Info: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE


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    hy531000ahy534256a16-bithy5216257+7x16-bitdb101-20-may95bedo ramhy5118160bhy512264hy5117404hy5118164b PDF

    HY5116400BT

    Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
    Contextual Info: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC


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    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


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    cp005-1fis89c51z16c02z86e30+16zz16c03z8036z8536z8038z5380z53c80mn4117405nn5118165xl93lc46apnn514265ms6264l-10pcw24m257nn514265aw24m257ak-15hy62256alp10mhs p80c51 PDF

    HY514260

    Abstract: HY5117404A 164-04A 4m 300mil
    Contextual Info: I' PRODUCT AVAILABILITY DRAM PRODUCT 1Mbit 2M bit 4Mbit DESCRIPTION PACKAGE OPTION ACCESS TIME ns - As of '96.3Q OPERATI!« CURRENT (mA,MAX) STA»IDBY CURI*ENT (rtiA, MAX) TTL CMOS AVAILABILITY 1M x 1 F a s t Pa ge HY531000A SOJ 60/7 0/80 85/7 5/65 2 1


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    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Contextual Info: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


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    Contextual Info: •HYUNDAI HY5117400B ,H Y 5116400B 4Mx4, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -bit configuration w ith Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


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    hy5117400b5116400b PDF

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Contextual Info: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


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    HY514260

    Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
    Contextual Info: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .


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    hy531000ahy534256a256kx4-bithy512260+7128kx16-bithy514260hy5118160hy5116160hy5117404hy51v65400hy511616 PDF