HX6218 Search Results

Contextual Info: Honeywell Military & Space Products HX6409 HX6218 HX6136 FIFO— SOI FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jim Process (Leff = 0.65|am) • Read/Write Cycle Times <35 ns (-55° to 125°C)

x-ray cmos

Abstract: HX6409 6409D 6218 FIFO 065um capacitor enw
Contextual Info: FIFO – HX6409/HX6218/HX6136 First-In First-Out Memory HX6409/HX6218/HX6136 The HX6409, HX6218, and HX6136 are high speed, low power, first-in first-out memories with clocked read and write interfaces. The HX6409 is a 4096-word by 9bit memory array; the HX6218 is a 2048-word by 18-bit

065um

Contextual Info: FIFO – HX6409/HX6218/HX6136 First-In First-Out Memory HX6409/HX6218/HX6136 The HX6409, HX6218, and HX6136 are high speed, low power, first-in first-out memories with clocked read and write interfaces. The HX6409 is a 4096-word by 9bit memory array; the HX6218 is a 2048-word by 18-bit

HX6409

Abstract: D1878
Contextual Info: Aerospace Electronics FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 µm Process (Leff = 0.65µm) • Read/Write Cycle Times <35 ns (-55° to 125°C)

Contextual Info: Honeywell Military & Space Products FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jam Process (Leff = 0.65|im) OTHER • Read/Write Cycle Times <35 ns (-55° to 125°C)

Contextual Info: Aerospace Electronics FIFO— SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |a,m Process (Leff = 0.65|a,m) • Read/Write Cycle Times <35 ns (-55° to 125°C)

Contextual Info: FIFO - HX6409/HX6218/HX6136 First-In First-Out Memory HX6409/HX6218/HX6136 The HX6409, HX6218, and HX6136 are high speed, low In addition, the three FIFOs have an output enable pin power, first-in first-out memories with clocked read and write OE and a master reset pin (MR). The read (CKR)

HX6409

Contextual Info: Aerospace Electronics FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 µm Process (Leff = 0.65µm) • Read/Write Cycle Times <35 ns (-55° to 125°C)

Contextual Info: HX6409/HX6218/HX6136 First-In First-Out Memory The HX6409, HX6218, and HX6136 are high speed, low power, first-in first-out FIFO memories with clocked read and write interfaces. The HX6409 is a 4096-word by 9-bit memory array; the HX6218 is a 2048-word by 18-bit memory array; and the HX6136

Contextual Info: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |a,m Process (Leff = 0.65|a,m) • Read/Write Cycle Times <35 ns (-55° to 125°C)

Contextual Info: Honeywell Military & Space Products Preliminary FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 n.m Process (Lelf = 0.65}im) • Read/Write Cycle Times

Contextual Info: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • • 1 K x 36, 2 K x 18, 4 K x 9 O rganizations Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 j^m Process (Leff = 0.65|am) OTHER • R ead/W rite Cycle Tim es <35 ns (-55° to 125°C)