HVL142A Search Results

HVL142AM

Abstract: PUSF0002ZA-A NO133
Contextual Info: HVL142AM Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0198-0200 Rev.2.00 Jan 19, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max)

HVL142A

Abstract: HVL142AM
Contextual Info: HVL142AM Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0198-0100Z Rev.1.00 Mar.25.2004 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max)

Contextual Info: HVL142A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0432-0100 Previous: ADE-208-1593 Rev.1.00 Nov 26, 2004 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 1.3 Ω max)

Contextual Info: HVL142A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0432-0200 Rev.2.00 Jan 13, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max)

HVL142A

Contextual Info: HVL142A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0432-0200 Rev.2.00 Jan 13, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max)

HVL142A

Contextual Info: HVL142A Silicon Epitaxial Planar Pin Diode for Antenna Switching ADE-208-1593 Z Rev.0 Nov. 2002 Features • Low capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 1.3 Ω max) • Extremely small Flat Package (EFP) is suitable for surface mount design.

Contextual Info: HVL142A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0432-0200 Rev.2.00 Jan 13, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

Contextual Info: RKP406KS Composite Pin Diode for Antenna Switching REJ03G1461-0100 Rev.1.00 Jul 10, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HVL142AM

Abstract: PUSF0012ZA-A RKP201KN RKP406KS mark L6
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

EIAJ-ED-4701

Abstract: EIAJED-4701 1SS106 EIAJ-ED-4131 RKP450KE EIAJ standards zener diode reliability fit 1s2076 smd diode ED 1SS270
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: RKP405KS Composite Pin Diode for Antenna Switching REJ03G1543-0100 Rev.1.00 Apr 20, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max @IF = 10 mA, f = 100 MHz)

varicap diode

Abstract: HSD226-N HSL226-N RKV653KP HVL142-N bromine hydroxide
Contextual Info: Renesas Technology Expands its Lineup of Halogen-Free Resin Diode Products  Three new package types, TEFP, EFP, and SFP, will be joined in addition to Current 0.6 x 0.3 mm size varicap diodes  Tokyo, December 7, 2006  Renesas Technology Corp. today announced the expansion of its lineup

Contextual Info: RKP405KS Composite Pin Diode for Antenna Switching REJ03G1543-0100 Rev.1.00 Apr 20, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max @IF = 10 mA, f = 100 MHz)

Contextual Info: RKP407KS Composite Pin Diode for Antenna Switching REJ03G1462-0100 Rev.1.00 Jul 10, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

HVL142A

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

r61505

Abstract: R63400 R61506 R61504 R61501 NS953 Niigata Seimitsu ns953 ic data r61503 Niigata Seimitsu 04BZ
Contextual Info: Rev.19.00 2007.10.31 Renesas Diodes General Presentation www.renesas.com Renesas Diodes General Presentation October 2007 Standard Product Business Group 10/31/2007 Rev.19.00 2007. Renesas Technology Corp., All rights reserved. Notes regarding these materials

HVL142AM

Abstract: PUSF0012ZA-A RKP415KS
Contextual Info: RKP415KS Composite Pin Diode for Antenna Switching REJ03G1737-0100 Rev.1.00 Nov 27, 2008 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max) Thin outline of diode array with four same kind of elements (MFP12) is suitable for compact and high-density

PUSF0012ZA-A

Abstract: RKP201KN RKP400KS HVL142AM 6L-112
Contextual Info: RKP400KS Composite Pin Diode for Antenna Switching REJ03G1257-0200 Rev.2.00 Jul 03, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)

HVL142AM

Abstract: PUSF0012ZA-A RKP201KN RKP406KS mark L6
Contextual Info: RKP406KS Composite Pin Diode for Antenna Switching REJ03G1461-0100 Rev.1.00 Jul 10, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)