HUF75 Search Results

75307

Abstract: 75307d transistor 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334
Contextual Info: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

59E-1

Abstract: AN7254 AN7260 AN9321 AN9322 HUF75309T3ST TB334 TB337
Contextual Info: HUF75309T3ST Data Sheet June 1999 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET File Number 4377.3 Features • 3A, 55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

HUF75332P3

Abstract: 75332 75332P 75332S HUF75332G3 HUF75332S3S HUF75332S3ST TB334
Contextual Info: HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

75344g

Abstract: 75344P HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
Contextual Info: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet January 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

75631p

Abstract: 75631 AN9321 AN9322 HUF75631P3 HUF75631S3ST TB334
Contextual Info: HUF75631P3, HUF75631S3ST Data Sheet August 2000 File Number 4720.3 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF75631P3 HUF75631S3ST Features

HUF75939P3

Abstract: AN7254 AN7260 AN9321 AN9322 HUF75939S3ST TB334
Contextual Info: HUF75939P3, HUF75939S3ST Data Sheet December 2000 File Number 5008 22A, 200V, 0.125 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) • Ultra Low On-Resistance

75344G

Abstract: 75344p HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
Contextual Info: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet December 2001 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

fairchild to-220ab 75343P

Abstract: 75343p 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334
Contextual Info: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

TA17465

Abstract: RF4E20N50 power mosfet 500v 20a circuit A1025
Contextual Info: RF4E20N50S Data Sheet 20A, 500V, 0.240 Ohm, N-Channel Power MOSFETs May 2002 Features • 20A, 500V [ /Title These are N-Channel enhancement mode silicon gate • rDS ON = 0.240Ω (HUF75 power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated

Contextual Info: HUF75831SK8 Data Sheet August 2000 File Number 4796.2 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER

75842P

Contextual Info: HUF75842P3, HUF75842S3S TM Data Sheet December 2000 File Number 4815.1 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF75842P3 HUF75842S3S

75545P

Abstract: 75545S
Contextual Info: in terrii HUF75545P3, HUF75545S3S D ata S h e e t J u n e 1999 F ile N u m b e r 4 7 3 8 .1 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance • rDS ON = 0.01 O il, V q s = 10V

75332P

Abstract: 75332 75332S fairchild 75332s 1e9A HUF75332G3 HUF75332P3 HUF75332S3S HUF75332S3ST TB334
Contextual Info: HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet January 2005 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75307T3ST Semiconductor November 1998 Data Sheet 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET » M K M M M M jfm W File Number 4364.3 Features • 2.6A, 55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

Contextual Info: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet December 2004 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75321D3ST Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75545P3, HUF75545S3S Semiconductor June 1999 Data Sheet File Num ber 4738.1 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN FLANGE • Ultra Low On-Resistance • rDS(ON) = 0.01 O il,

02e4

Contextual Info: HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Semiconductor Data Sheet 75A, 55V, 0.009 Ohm, N-Channel, UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75321P3, HUF75321S3, HUF75321S3S Semiconductor Novem ber 1998 Data Sheet 31 A, 55V, 0.034 Ohm, N-Channel, UltraFET Power MOSFET The HUF75321 N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology

75343P

Contextual Info: HUF75343G3, HUF75343P3, HUF75343S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

huf75

Abstract: FQB46N15 FQB33N10 HUF76639 IRLW530 huf75939
Contextual Info: Part VDS Number V TO-263 N-Channel FDB5690 HUF76423S3S FQB30N06L HUF76419S3S FQB30N06 FQB20N06L FQB20N06 FQB13N06L FQB13N06 HUF75545S3S HUF75542S3S FQB90N08 FQB70N08 FQB58N08 FQB44N08 FQB24N08 FQB17N08L FQB17N08 FQB9N08L FQB9N08 HUF75645S3S HUF76645S3S FQB70N10

75852G

Abstract: AN7254 AN7260 AN9321 AN9322 HUF75852G3 TB334
Contextual Info: HUF75852G3 Data Sheet April 2000 File Number 4846 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER