HS030 Search Results

Robinson

Abstract: E14-16
Contextual Info: METPAK 2 DESCRIPTIO N REAR PLUG UP MATE LENGTHS “A” METPAK 2 SHROUD MP2-HS030-5X 11.95mm MP2-HS060-5X 23.95mm MP2-HS090-5X 35.95mm MP2-HS120-5X 47.95mm MP2-HS150-5X 59.95mm MP2-HS180-5X 71.95mm MP2-HS210-5X 83.95mm MP2-HS240-5X 95.95mm M ETPA K 2 HEADER

IC SAF 0300 DATA

Abstract: IC SAF 0300 SMD Transistor Y14 transistor d143
Contextual Info: Radiation Hardened CMOS Dual DPST Analog Switch HS-302RH, HS-302EH Features Intersil’s Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended to

5962F9581304VXC

Abstract: 5962F9581304QXC smd transistor s3 HI-303 HS-303ARH HS-303RH 60MeV-mg 3d1431 5962F9581304VCC
Contextual Info: HS-303ARH Data Sheet December 14, 2006 Radiation Hardened CMOS Dual SPDT Analog Switch Features • QML, Per MIL-PRF-38535 The HS-303ARH analog switch is a monolithic device fabricated using Intersil’s dielectrically isolated Radiation Hardened Silicon Gate RSG process technology to insure

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add paragraph 3.1.1 and Appendix A for microcircuit die. Changes in accordance with N.O.R. 5962-R014-98. 97-12-21 Raymond Monnin B Make changes to boilerplate and add device class T. - ro 98-12-03 Raymond Monnin

IS9-2100ARH-8

Abstract: 26clv32 5962F9954701VYC 5962F9568902VXC 5962R9666501VEC ld smd transistor 5962F9954701VXC 5962R9575101VRC 5962F9674202V9A 5962F9666302VXC
Contextual Info: Military/Space 17 2008 P RODUCT S ELECTION GUIDE Military ICs pg. 17-2 Defense IC Test Flows (pg. 17-6) Defense ICs (pg. 17-2) MIL-PRF-38535 Class Q (pg. 17-6) Auxiliary Output (pg. 17-2) Comparators (pg. 17-4) EEPROM (pg. 17-2) Micro + Peripherals (pg. 17-4)

qml-38535

Abstract: S4 SMD Marking Code 5962R9581201VXC 5962R9581201VCC HS9-384RH-Q
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with N.O.R. 5962-R014-98. 97-12-21 R. MONNIN B Make changes to boilerplate and add device class T. - ro 98-12-03 R. MONNIN REV SHEET REV B B B B B B SHEET 15 16 17 18 19 20 REV STATUS

Contextual Info: Radiation Hardened BiCMOS Dual SPDT Analog Switch HS-303CEH Features The HS-303CEH is an analog switch and a monolithic device that is fabricated using Intersil’s dielectrically isolated Radiation Hardened Silicon Gate RSG process technology to insure latch-up free operation. It is pinout compatible and

transistor d143

Abstract: HS-303BRH smd k14a 5962F9581304VXC K14A D143 303B 95813 HI-303 Intersil HS0
Contextual Info: HS-303ARH, HS-303BRH Data Sheet July 7, 2008 Radiation Hardened CMOS Dual SPDT Analog Switch FN6411.1 Features • QML, Per MIL-PRF-38535 The HS-303ARH and HS-303BRH analog switches are monolithic devices fabricated using Intersil’s dielectrically isolated Radiation Hardened Silicon Gate RSG process

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add paragraph 3.1.1 and appendix A for microcircuit die. Changes in accordance with N.O.R. 5962-R168-96. 96-08-01 R. MONNIN B Make changes to boilerplate and add device class T. - ro 98-12-04 R. MONNIN C

HI302

Abstract: HS9-302RH-Q RAD HARD ANALOG SWITCH
Contextual Info: HS-302RH-T TM Data Sheet July 1999 FN4603.1 Radiation Hardened CMOS Dual DPST Analog Switch Features Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended

K9F2G08U0B

Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM

HS03095A

Contextual Info: 3 PINS PER SIDE SPECIFICATIONS: ELECTRICAL CHARACTERISTICS: DIELECTRIC RATED VOLTAGE CAPACITANCE RANGE EIA CAPACITANCE TOLERANCE TEST PARAMETERS X7R 100 VDC 8.2uF (825) M (+/-20%) 1 kHz ±50 Hz @ 1.0 VRMS, 25°C ±15% (-55°C TO +125°C) < 2.5 % @ 1kHz, 25°C

5962F9568902VXC

Abstract: HS0-4080ARH-Q is9 1825asrh-q 5962F0052301VYC CD40106BKMSR 0546r 5962F9954701VXC 5962F0150901VXC HS 3282 CD4063
Contextual Info: Space/Defense 17 2009 P RODUCT S ELECTION GUIDE Defense ICs pg. 17-2 Defense IC Test Flows (pg. 17-6) Defense ICs (pg. 17-2) MIL-PRF-38535 Class Q (pg. 17-6) Auxiliary Output (pg. 17-2) Comparators (pg. 17-4) EEPROM (pg. 17-2) Micro + Peripherals (pg. 17-4)

d143 T transistor

Abstract: transistor d143 5962R9581201QCC HI302
Contextual Info: Radiation Hardened CMOS Dual DPST Analog Switch HS-302RH, HS-302EH Features Intersil’s Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended to

K5W1G

Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION

Contextual Info: Radiation Hardened BiCMOS Dual SPDT Analog Switch HS-303CEH Features The HS-303CEH is an analog switch and a monolithic device that is fabricated using Intersil’s dielectrically isolated Radiation Hardened Silicon Gate RSG process technology to insure latch-up free operation. It is pinout compatible and

qml-38535

Abstract: HS9-303RH HS-393RH
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with N.O.R. 5962-R168-96. 96-08-01 R. MONNIN B Make changes to boilerplate and add device class T. - ro 98-12-04 R. MONNIN REV SHEET REV B B B B B B B B B SHEET 15 16 17 18 19 20 21

qml-38535

Abstract: 5962R9581201VXC
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Changes in accordance with N.O.R. 5962-R014-98. 97-12-21 R. MONNIN Make changes to boilerplate and add device class T. - ro 98-12-03 R. MONNIN REV SHEET REV B B B B B B SHEET 15 16 17 18 19 20 REV STATUS REV

Japan Servo -KT56JM4

Abstract: "japan servo" KH56JM2-801 KH56QM2-801 KT60KM06 kt60lm06 009 KH42JM2-801 KH42JM2 KH56JM2 90022-AS
Contextual Info: IC SOCKET/TOOL Preci-Dip Series 110/123 IC Socket Solder Type DIL 110 B No. of Pin 5 m Sn 0.25 m Au 7.62 7.62 7.62 7.62 7.62 15.24 15.24 15.24 15.24 22.86 8 14 16 18 20 24 28 32 40 64 110-99-308-41-001 110-99-314-41-001 110-99-316-41-001 110-99-318-41-001

5962F9581304VXC

Abstract: 5962F9581307VXC 5962F9581306VXC D14.3 Package HS-303AEH K14.A Package smd k14a D143 "top mark" intersil 303arh
Contextual Info: Radiation Hardened CMOS Dual SPDT Analog Switch HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog Features switches are monolithic devices fabricated using Intersil’s dielectrically isolated Radiation Hardened Silicon Gate RSG

TSMC 0.18 um MOSfet

Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221
Contextual Info: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A