tda2579
Abstract: saa4940 TMS4C1050 TMS4C1050-60 TDA8755 circuit repairing technics TMS4C2970 PCB83C652 SAA4951 SAA4951WP
Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAA4951 Memory controller Preliminary specification File under Integrated Circuits, IC02 April 1994 Philips Semiconductors Preliminary specification Memory controller SAA4951 FEATURES GENERAL DESCRIPTION • Support for acquisition, display and deflection PLL
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HRA SOT
Abstract: AD8065 iN2 SOT23-5 AD8066 MO-187-AA ad8065 photodiode ad8065 photodiode circuit
Contextual Info: High Performance, 145 MHz FastFET Op Amps AD8065/AD8066 FEATURES APPLICATIONS FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth G = +1 180 V/ s slew rate (G = +2) Low noise 7 nV/√Hz (f = 10 kHz) 0.6 fA/√Hz (f = 10 kHz)
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ad8065/ad8066ot-23-5ad8065ot-23+6hra sotin2 sot23-5ad8066mo-187-aaad8065 photodiodead8065 photodiode circuit
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SAA4940
Abstract: TMS4C1050 tda2579 TMS4C1050-60 TV horizontal Deflection Systems TDA8755 BUS CONTROLLED VERTICAL DEFLECTION SYSTEM h a 431 transistor PCB83C652 SAA4951
Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAA4951 Memory controller Preliminary specification File under Integrated Circuits, IC02 April 1994 Philips Semiconductors Preliminary specification Memory controller SAA4951 FEATURES GENERAL DESCRIPTION • Support for acquisition, display and deflection PLL
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saa4951saa4940tms4c1050tda2579+6tms4c1050-60tv horizontal deflection systemstda8755bus controlled vertical deflection systemh a 431 transistorpcb83c652
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Trans Switching
Abstract: SOT-23 MARKING T31 KSR1109 KSR2109
Contextual Info: SAM SU N G SE M IC O N D U C T O R IN C KSR2109 14E j 7*11,111142 Û 0 0 7 1 2 7 4 I PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION T- 3T-I3 Bias Resistor Built In t SOT-23 • Switching Circuit, Inverter, Interface circuit Driver circuit • BuHt in bias Resistor (R=4.7KQ|
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ksr2109ksr1109ot-23-10ma+2trans switchingsot-23 marking t31
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SAA4991WP
Abstract: TV horizontal Deflection Systems tda9152 TV horizontal Deflection Systems 25 PWC05 TDA6111 temperature controller using microcontroller BUS CONTROLLED VERTICAL DEFLECTION SYSTEM field memory cross reference SAA4945H
Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAA4952WP Memory controller Objective specification File under Integrated Circuits, IC02 1997 Jun 10 Philips Semiconductors Objective specification Memory controller SAA4952WP • Capability of reading the length of incoming fields via
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saa4952wptda9151z/1250z/1050+14z/625z/525sca54547047/20/01/pp32saa4991wptv horizontal deflection systemstda9152tv horizontal deflection systems 25pwc05tda6111temperature controller using microcontrollerbus controlled vertical deflection systemfield memory cross referencesaa4945h
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tms4c1050
Abstract: TDA2579 TDA8709 saa4940 TMS4C1050-60 TV horizontal Deflection Systems SAA4951 SAA4951WP SAA7151 SAA7157
Contextual Info: INTEGRATED CIRCUITS SAA 4951 Memory controller Preliminary specification File under Integrated Circuits, IC02 April 1994 Philips Semiconductors PHILIPS PHILIPS 711052b 0077TSD 211 Preliminary specification Philips Semiconductors Memory controller SAA4951 FEATURES
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saa49517110fl2b0077tsd711gfleb+10qq77171tms4c1050tda2579tda8709saa4940tms4c1050-60tv horizontal deflection systemssaa4951wpsaa7151saa7157
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MHA723
Abstract: SMD MARKING CODE sdp TDA2579 tda6111 marking HRA TDA9151 TDA9152
Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAA4952WP Memory controller Objective specification File under Integrated Circuits, IC02 1997 Jun 10 Philips Semiconductors Objective specification Memory controller SAA4952WP • Capability of reading the length of incoming fields via
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saa4952wpz/1250z/1050z/625+10z/5259aa4952wpa-tot187mha723smd marking code sdptda2579tda6111marking hratda9151tda9152
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Contextual Info: High Performance, 145 MHz FastFET Op Amps AD8065/AD8066 FEATURES APPLICATIONS FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth G = +1 180 V/ s slew rate (G = +2) Low noise 7 nV/√Hz (f = 10 kHz) 0.6 fA/√Hz (f = 10 kHz)
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AD8065
Abstract: AD8066ARMZ AD8066 AD8065ART-REEL7 AD8066ARZ-RL1
Contextual Info: High Performance, 145 MHz FastFET Op Amps AD8065/AD8066 FEATURES APPLICATIONS FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth G = +1 180 V/ s slew rate (G = +2) Low noise 7 nV/√Hz (f = 10 kHz) 0.6 fA/√Hz (f = 10 kHz)
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AD8066
Abstract: AD8065 02916-E-052 AD8066ARZ-RL1
Contextual Info: High Performance, 145 MHz FastFET Op Amps AD8065/AD8066 FEATURES APPLICATIONS FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth G = +1 180 V/ s slew rate (G = +2) Low noise 7 nV/√Hz (f = 10 kHz) 0.6 fA/√Hz (f = 10 kHz)
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AD8066
Abstract: HRA SOT 103-114 AD8065 AD8065ARZ BJT datasheet with i-v characteristics fet preamp schematics for a PA amplifier 02916-E-032 Crosstalk-AD8066
Contextual Info: High Performance, 145 MHz FastFET Op Amps AD8065/AD8066 FEATURES APPLICATIONS Qualified for automotive applications FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth G = +1 180 V/ s slew rate (G = +2) Low noise
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ad8065/ad8066ot-23-5d02916-0-8/10ad8066+9hra sot103-114ad8065ad8065arzbjt datasheet with i-v characteristicsfet preampschematics for a pa amplifier02916-e-032crosstalk-ad8066
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AD8066
Abstract: HRA SOT AD8065 ESD Diodes 4995V matched pair JFET AD8066ARZ-RL1
Contextual Info: High Performance, 145 MHz FastFET Op Amps AD8065/AD8066 FEATURES APPLICATIONS FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth G = +1 180 V/ s slew rate (G = +2) Low noise 7 nV/√Hz (f = 10 kHz) 0.6 fA/√Hz (f = 10 kHz)
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200V transistor npn 2a
Abstract: samsung tv Samsung Semiconductor Q007t d 331 TRANSISTOR equivalent
Contextual Info: SAMSUNG SEMICONDUCTOR IME INC O 0007bM7 fl I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5004 T-33 -13 COLOR TV HORIZONTAL OUTPUT APPLICATIONS HIGH Collector* ««* Voltage V eto « 1500V ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C ) Characteristic CoHector-Base Voltage
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0007bm7ksd5004saturato-92gqg77fe+5200v transistor npn 2asamsung tvsamsung semiconductorq007td 331 transistor equivalent
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Contextual Info: High Performance, 145 MHz FastFET Op Amps AD8065/AD8066 FEATURES APPLICATIONS Qualified for automotive applications FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth G = +1 180 V/µs slew rate (G = +2) Low noise
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Contextual Info: High Performance, 145 MHz FastFET Op Amps AD8065/AD8066 FEATURES APPLICATIONS Qualified for automotive applications FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth G = +1 180 V/ s slew rate (G = +2) Low noise
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samsung tv
Contextual Info: SAMSUNG SEM ICONDUCTOR IN C KSD5003 14E D I 7*11,4142 □□0 ?b 4 4 T-33 - COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN HIQH Collectorflise Vbltaga Vc»o=1500 V ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Cotlector-Base Voltage Gollector-Emitter Voltage
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IRF4953
Abstract: 50N03 IR*435 2n3904 h2 c F01J2E IRF4435 M339 2n3904-c49 IC la 4148 IRF44
Contextual Info: Charger Board 1 of 5 CV_A CCO SK24 2 T EMP C2 10UF/50V 2220 1 1K R29 R34 10K D4 F01J2E R7 4.7K VC B 4 VC VCC Q3 2N3904 10K R1 1 2 D2 1,2,3 1 5,6,7,8 B Q8 2N3904 10K R33 R20 D5 F01J2E R2 470 B 2 VC 1N4148 D7 10K R30 BAT C8 0.1UF 4.7K 10K R8 Q1 IRF4435(SO-8)
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AD8065
Abstract: AD8066
Contextual Info: High Performance, 145 MHz FastFET Op Amps AD8065/AD8066 FEATURES APPLICATIONS FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth G = +1 180 V/µs slew rate (G = +2) Low noise 7 nV/√Hz (f = 10 kHz) 0.6 fA/√Hz (f = 10 kHz)
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AD8066
Abstract: AD8065 ad8065 photodiode AD8065AR AD8065AR-REEL AD8065AR-REEL7 AD8065ART-R2 AD8065ART-REEL AD8065ART-REEL7 AD8066AR
Contextual Info: High Performance, 145 MHz FastFET Op Amps AD8065/AD8066* FEATURES FET Input Amplifier 1 pA Input Bias Current Low Cost High Speed 145 MHz, −3 dB Bandwidth G = +1 180 V/s Slew Rate (G = +2) Low Noise 7 nV/Hz (f = 10 kHz) 0.6 fA/Hz (f = 10 kHz)
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diode B14A
Abstract: B14A B14A diode crystal diode if6 hall hall o4E DIODO LK diodo FAG 50 FAG 50 diode FAG 32 diode
Contextual Info: MIL SPECS IC|D00D15S 0D00L.S2 S | « 1^ - 19500/91 31^ A»eod»cnt 1 1 M y i960 KXLITARI STFEUFICATIO SDdCOOTWCTOT DEVICE DIODE, SILICOTI, POWER RECTIFUR TXTE W2153 Thla Ancndment forme a part of Military ' Specification KIL-S-19500/9HS1kC j, 2 No t 59 Page 1, paragraph 1.1 table., (l (surge) column: Delete "50" pertaining to
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0000bs2kil-s-195o0/9l1jj2i53kil-s-19500/91+11n2i53diode b14ab14ab14a diodecrystal diodeif6 hallhall o4ediodo lkdiodo fag 50fag 50 diodefag 32 diode
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report on colpitts oscillator
Abstract: TRANSISTOR SMD L82 smd transistor N33 B69812-N1897-A320 Colpitts Wideband VCO Circuit Schematic and PCB Layout 3ip2 Frequency Filters downconvertor 1890MHZ BFG505
Contextual Info: Philips Semiconductors 1890 MHz low power downconverter with 110 MHz I.F. . . . . . ^ ,Ca IOn ref3° 1890 M Hz LO W PO W E R DOW NCONVERTER W IT H 110 M Hz I.F . Introduction This application note describes the performance of a 1890 MHz low voltage 3 volt
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b69812-n1897-a320bc807bfg505xbfg505+9bb131report on colpitts oscillatortransistor smd l82smd transistor n33colpitts wideband vco circuit schematic and pcb layout3ip2frequency filtersdownconvertor1890mhz
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AD8066
Abstract: ad8065 photodiode circuit AD8065 AD8065AR AD8065AR-REEL AD8065AR-REEL7 AD8065ART-REEL AD8065ART-REEL7 AD8066AR schematics for a PA amplifier
Contextual Info: a FEATURES FET Input Amplifier 1 pA Input Bias Current Low Cost High Speed 145 MHz, –3 dB Bandwidth G = +1 180 V/s Slew Rate (G = +2) Low Noise 7 nV/÷Hz (f = 10 kHz) 0.6 fA/÷Hz (f = 10 kHz) Wide Supply Voltage Range 5 V to 24 V Single-Supply and Rail-to-Rail Output
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*8065s
Abstract: AD8065 AD8065s
Contextual Info: a FEATURES FET Input Amplifier 1 pA Input Bias Current Low Cost High Speed 145 MHz, –3 dB Bandwidth G = +1 180 V/s Slew Rate (G = +2) Low Noise 7 nV/√Hz (f = 10 kHz) 0.6 fA/√Hz (f = 10 kHz) Wide Supply Voltage Range 5 V to 24 V Single-Supply and Rail-to-Rail Output
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100021
Abstract: AD8065
Contextual Info: FEATURES FET Input Amplifier 1 pA Input Bias Current Low Cost High Speed 145 MHz, –3 dB Bandwidth G = +1 180 V/s Slew Rate (G = +2) Low Noise 7 nV/√Hz (f = 10 kHz) 0.6 fA/√Hz (f = 10 kHz) Wide Supply Voltage Range 5 V to 24 V Single-Supply and Rail-to-Rail Output
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