HN29V25611AT Search Results

K2111

Abstract: 800H HN29V25611AT-50H Hitachi DSA00480
Contextual Info: HN29V25611AT-50H 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1334A (Z) Rev. 1.0 Apr. 5, 2002 Description The Hitachi HN29V25611AT-50H Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The

Contextual Info: HN29V25611AT-50H Pin Arrangement 48-pin TSOP VCC NC*1 NC*1 NC*1 VSS RES RDY/Busy SC OE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 CDE WE CE NC*1 VSS 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13

Hitachi DSAUTAZ006

Contextual Info: HN29V25611AT-50H 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1334A (Z) Rev. 1.0 Apr. 5, 2002 Description The Hitachi HN29V25611AT-50H Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The

Hitachi DSAUTAZ006

Abstract: TFP-48DA
Contextual Info: HN29V25611A Series Package Dimensions HN29V25611AT Series TFP-48DA 12.00 12.40 Max 25 18.40 48 Unit: mm 24 1.20 Max *0.22 ± 0.08 0.08 M 0.20 ± 0.06 0.45 Max 0.08 *Dimension including the plating thickness Base material dimension 44 0.80 20.00 ± 0.20 0° – 8°

buffer

Abstract: if multiplexer matrix multiplexer multiplexer Multiplexor 64 inputs HN29V25611AT-50H
Contextual Info: HN29V25611AT-50H Block Diagram Sector address buffer X-decoder 16384 x 2048 + 64 × 8 memory matrix Data register (2048 + 64) •• I/O0 to I/O7 • • Multiplexer 16057 - 16384 2048 + 64 • • Data input buffer • • Input data control • • Y-gating

Hitachi DSAUTAZ006

Contextual Info: HN29V25611AT-50H Package Dimensions HN29V25611AT-50H TFP-48DA 12.00 12.40 Max Unit: mm 25 18.40 48 As of January, 2002 24 1.20 Max *0.22 ± 0.08 0.08 M 0.20 ± 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension 44 0.80

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

Hitachi DSAUTAZ006

Contextual Info: HN29V25611A Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1275B (Z) Rev. 1.0 Jan. 25, 2002 Description The Hitachi HN29V25611A Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are

800H

Abstract: HN29V25611A HN29V25611AT-50 D2111
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

HN29V25611A

Abstract: 800H HN29V25611AT-50 Hitachi DSA0047
Contextual Info: HN29V25611A Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1275B (Z) Rev. 1.0 Jan. 25, 2002 Description The Hitachi HN29V25611A Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are

DSA002786

Abstract: Hitachi DSA002786
Contextual Info: HN29V25611A Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1275A (Z) Preliminary Rev. 0.1 Jul. 25, 2001 Description The Hitachi HN29V25611A Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are

Hitachi 1024k*8 SRAM

Abstract: HB28B128C8C HB28B512C8C CSP72 NVM1GBYTE CSP-72 512kx8 sram dip HN58X2402SI HN58X2404SI HN58X2408I
Contextual Info: Family Group TotalSize Organisation SupplyVoltage HN58X2464I EEPROM NVM 64kbit 8kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2432I EEPROM NVM 32kbit 4kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2416I EEPROM NVM 16kbit 2kx8

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List

800H

Abstract: HN29V25611A HN29V25611AT-50
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog