HL832 Search Results

Hitachi DSA002726

Contextual Info: HL8325G GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW triple quantum well structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of optical

Contextual Info: HL8325G GaAIAs LD Description The HL8325G is a high-power 0.8 jim band GaAIAs la ser diode with a TQW i triple quantum w ell structure. Its internal circuit configuration is suited for oper ation on a single positiv e supply voltage. It is suitable as a light source for optical disk memories, card re aders and various other types o f optical equipment.

HL8325G

Contextual Info: HL8325G GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW triple quantum well structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of optical

HL8325G

Contextual Info: HL8325G ODE-208-048A Z Rev.1 May 08, 2007 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light

HL8325G

Contextual Info: HL8325G GaAlAs Laser Diode ODE-208-582C Z Rev.3 Mar. 2005 Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It

Contextual Info: HL8325G ODE-208-048B Z Rev.2 Feb. 01, 2008 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light

Contextual Info: HL8325G ODE2051-00 M Rev.0 Aug. 01, 2008 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 m band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light

Contextual Info: HL8325G GaAlAs Laser Diodes HITACHI ADE-208-582 Z 1st. Edition October 1997 Description The HL8325G is a high - power 0.8 (Am band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is

Hitachi DSA00164

Contextual Info: HL8325G GaAlAs Laser Diodes ADE-208-582 Z 1st. Edition October 1997 Description The HL8325G is a high - power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is

Hitachi DSA00279

Contextual Info: HL8325G GaAlAs Laser Diode ADE-208-582A Z 2nd Edition Dec. 2000 Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It

HL8325G

Abstract: Hitachi DSA0047
Contextual Info: HL8325G GaAlAs Laser Diode ADE-208-582A Z 2nd Edition Dec. 2000 Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is

MA177

Contextual Info: HL8325G GaAIAs Laser Diode Description The HL8325G is a high-power 0.8 jim band GaAIAs laser diode with a TQW triple quantum well structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types o f optical

Contextual Info: HL8325G ODE-208-048 Z Rev.0 Oct. 17, 2006 GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable for operation on a single positive supply voltage. It is suitable as a light

CCL-HL832

Abstract: PSR4000 taiyo PSR4000
Contextual Info: REV I S I ONS 80X r 0.45 (80X (4) A □_P 0.3) TO D O C U M E N T C O N T R O L E.C.N. DATE 12401 04/19/2000 BY/APP'D TL/GN TYP) □ _ o □ a a a □ a _p a □ 0.5) RELEASE I (1 o □ a ( 72X DESCRIPTION LTR r □□ o □ o (4) □ a □ a •-Q - □

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

opnext

Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
Contextual Info: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring

HL7806

Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
Contextual Info: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G

AU-85B

Abstract: Taiyo AUS-308 bi8921t prepreg GHPL-830 Bi8921 GHPL-830 GHPL MOMBD420G1A GHPL prepreg Samsung CMOS Image sensor
Contextual Info: Specification for Approval Samsung Electro-Mechanics Co.,LTD PDF created with pdfFactory Pro trial version www.pdffactory.com Specification for Approval Revision History Rev. Date Description of Change Rev. Page 1 2005.07.30 The Primary Specification 1.0 Rev.

CCL-HL-832

Abstract: PSR-4000 CCL-HL832 PSR4000 taiyo PSR4000
Contextual Info: 96X ( 96X r 0.45 0.3) J 1=1 ' I ! I o _ a _ ! I o a Q-E3Q-E3J a a - i— 0.5) LTR A a I a a a a a a ( 88X REV I S I ONS (5) I I ! I (1 DESCRIPTION RELEASE TO D O C U M E N T C O N T R O L E.C.N. DATE 12334 12/13/1999 BY/APP'D TL/GN TYP) l a a a a a a a

TAIYO PSR 4000

Abstract: TAIYO soldermask MO-208 psr-4000 CCL-HL832 PSR-4000 h PSR4000
Contextual Info: R E 24X 0 .4 5 — H ¿ ( 24X h I I i—i rii -l=l LTR H ( 2 .5 ) (—i I □ [J] □_ a 0.25) V 1 S 1 O N S DESCRIPTION BY/APP'D E . C. N . DATE A RELEASE 1195 7 03/19/1998 TL/AP B R E V I S E METAL & SOLDERMASK L A Y E R S ; PKG T H I C K N ES S WAS 0 . 9 - 1 . 1 ; R E V I S E T I T L E ;

ge100lfcsv

Abstract: GE100LFCS SPIL mold compound aus308 GE-100LFCS-V HL832NX Ablestik 89HPES12N3AZGBCGI AUS-308 89HPES10T4G2ZBBCG
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A1008-03 Product Affected: DATE: September 10, 2010 MEANS OF DISTINGUISHING CHANGED DEVICES: 19mm x 19mm CABGA-324 (Standard & Green)

HL832nxa

Abstract: VPP1552BFG HL832NX-A HL-832NXA HL832NXA-EX GE100LFCS HL832-NX-A HL832 KE1250LKDS HL832NX
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A1004-04 Product Affected: Date Effective: Contact: Title: Phone #: Fax #: E-mail: DATE: 26-Jul-2010 15.0mm x 15.0mm x 1.7mm FPBGA-324

nitto GE

Abstract: GE-100L SXVX-50BHG nitto GE-100L SXVX-210BHG SXVX-50 HL832NX SXVX-210 Nitto GE 100 HL832HS
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A1008-07 Product Affected: DATE: September 17, 2010 MEANS OF DISTINGUISHING CHANGED DEVICES: 17mm x 17mm TEBGA-580 (Green) Product Mark

hitachi DC9300

Abstract: 1550nm Laser Diode with butterfly pin package DC9300 1550nm Laser Diode butterfly hitachi HL7851G DR9301 780nm 10mW laser diodes LB7671 RCV5932 laser DFB 1550nm 10mW
Contextual Info: C 1998 Dirk Plha HITACHI OPTOELECTRONIC DEVICES HITACHI OPTODEVICES • Industrial and Information Laser Diodes For laser levellers, alignment systems, bar code readers, distance measurement and optical storage, Hitachi offers a complete line-up of 635nm to 830nm laser diodes