HIGH-CURRENT SWITCHING APPLICATIONS Search Results

2SB1216

Abstract: 2044B
Contextual Info: Ordering number:EN2540A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1216/2SD1816 High-Current Switching Applications Applications • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications. Package Dimensions

SF104C

Contextual Info: SF104C GLASS PASSIVATED SUPER FAST RECTIFIER VOLTAGE 200 Volts CURRENT 10 Ampere FEATURES * * * * * * * Low switching noise Low forward voltage drop Low thermal resistance High current capability Super fast switching speed High reliability Good for switching mode circuit

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1313 INDUSTRIAL APPLICATIONS Unit in n HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. FEATU R E S : . High Power Dissipation : . High Collector Current : . High Speed Switching : . Low Saturation Voltage :

2SB1136

Abstract: 2SD1669
Contextual Info: Ordering number:2092B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1136/2SD1669 50V/12A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, and other genral high-current switching applications. unit:mm

Contextual Info: 2SK1835 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • High breakdown voltage VDSS= 1500V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator

smd diode ua

Abstract: transistor smd marking 2SC3648
Contextual Info: Transistors SMD Type High-Voltage Switching Applications 2SC3648 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

2sc4288a

Contextual Info: 2SC4288A SILICQN npn t r i p l e d if f u s e d TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY. HIGH SPEED SWITCHING APPLICATIONS. . High Voltage. : VcBO=1500V . Fast Switching Speed. . Extra High Current Capability : Ic=12A DC

Contextual Info: i TOSHIBA 2SA124A SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit In mm HIGH CURRENT SWITCHING APPLICATIONS. &811AX. FEATURES: . Low Collector Saturation Voltage : vCE(sat)*“0.4V(Max.) at Ic*-3A . High Speed Switching Time : tstg=1.0/<s(Typ.)

Contextual Info: TECHNICAL NOTE Large Current External FET Controller Type Switching Regulator Single-output Step-up, High – efficiency Switching Regulator BD9306AFVM Single-down High – efficiency Switching Regulator BD9305AFVM zDescription BD9305AFVM / BD9306AFVM are 1-channel DC/DC converter controllers.

Contextual Info: Central" CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring

LM26001

Abstract: LM26001EM LM26001MXA LM26001MXAX MXA16A TSSOP-16 TSSOP16EX
Contextual Info: LM26001 1.5A Switching Regulator with High Efficiency Sleep Mode General Description Features The LM26001 is a switching regulator designed for the high efficiency requirements of applications with stand-by modes. The device features a low-current sleep mode to maintain

2SC3299

Contextual Info: 2SC3299 SILICON NPN EPITAXIAL TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: JZÍ3.2±Q2 . Low Collector Saturation Voltage : VcE sat =0.4V(Max.) at Ic=3A . High Speed Switching Time : tstg=l.O/is (Typ.) . Complementary to 2SA1307

Contextual Info: SRP600A thru SRP600K Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward current operation • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106

2SD1062S

Abstract: 723H 2SB826 2SD1062 SC46 T0220AB ic 7231 11HH IR 723H
Contextual Info: Ordering num ber: EN 723H 2SB826/2SD1062 N0.723H i SAW O PNP/NPN E pitaxial P lanar Silicon Transistors 50V/12A Switching Applications A pp licatio n s • Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

2SC3762

Contextual Info: Inchange Semiconductor Product Specification 2SC3762 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High speed switching ・High current capability APPLICATIONS ・For use in high speed and power switching applications PINNING PIN DESCRIPTION

Contextual Info: 2SK1831, 2SK1832 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter

Contextual Info: 2SK1572 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

Contextual Info: 2SK1566, 2SK1567 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

Contextual Info: 2SK2582 Silicon N-Channel MOS FET HITACHI Preliminary November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter

K1761

Contextual Info: 2SK1761 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Outline

2SC1610

Contextual Info: Inchange Semiconductor Product Specification 2SC1610 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For high speed power switching applications PINNING see fig.2 PIN DESCRIPTION

MP-25

Abstract: NP55N06CLD NP55N06DLD NP55N06ELD
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP55N06CLD,NP55N06DLD,NP55N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

D1403

Abstract: NP80N03ELE NP80N03KLE NP80N03DLE MP-25 NP80N03CLE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N03CLE,NP80N03DLE,NP80N03ELE NP80N03KLE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

2SC3303

Contextual Info: 2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3303 Industrial Applications High Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 µs (typ.)