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    HIGH SPEED DOUBLE DIODE Search Results

    HIGH SPEED DOUBLE DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC331AD7LQ103KX18D
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GC331CD7LP683KX19L
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GC332QD7LP104KX18L
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GC355DD7LP684KX18L
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive PDF
    GR331AD7LP333KW01D
    Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for General Purpose PDF

    HIGH SPEED DOUBLE DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    bav74 Date Code

    Abstract: BAV74 DIODE package sot23 smd marking A1 sot23 marking code JTp SMD MARKING CODE jtp smd code marking LP smd diode BAV74 jtp sot23
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV74 High-speed double diode Product specification Philips Semiconductors Product specification High-speed double diode BAV74 FEATURES PINNING • Small plastic SMD package PIN DESCRIPTION • High switching speed: max. 4 ns


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    M3D088 BAV74 BAV74 O-236AB bav74 Date Code DIODE package sot23 smd marking A1 sot23 marking code JTp SMD MARKING CODE jtp smd code marking LP smd diode BAV74 jtp sot23 PDF

    Contextual Info: TSHG6200 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSHG6200 is a high speed infrared emitting diode in GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. The new technology combines high speed with high


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    TSHG6200 TSHG6200 2002/95/EC 2002/96/EC 08-Apr-05 PDF

    Contextual Info: TSHF4410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSHF4410 is a high speed infrared emitting diode in GaAlAs double hetero DH technology, in a clear, untinted plastic package. DH technology combines high speed with high radiant


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    TSHF4410 TSHF4410 2002/95/EC 2002/96/EC 08-Apr-05 PDF

    MAX160

    Abstract: TSMF4710-GS08 TSMF4710-GS18
    Contextual Info: TSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF4710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant


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    TSMF4710 TSMF4710 D-74025 08-Mar-05 MAX160 TSMF4710-GS08 TSMF4710-GS18 PDF

    Contextual Info: TSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF4710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant


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    TSMF4710 TSMF4710 08-Apr-05 PDF

    Contextual Info: TSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant


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    TSMF3710 TSMF3710 08-Apr-05 PDF

    Contextual Info: TSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSMG3700 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant


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    TSMG3700 TSMG3700 08-Apr-05 PDF

    Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


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    TSFF5210 TSFF5210 2002/95/Es 08-Apr-05 PDF

    Contextual Info: TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


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    TSFF5410 TSFF5410 2002/9s 08-Apr-05 PDF

    Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


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    TSFF5210 TSFF5210 2002/95/Eany 18-Jul-08 PDF

    Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5210 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant


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    TSFF5210 TSFF5210 2002/95/EC 2002/9s 08-Apr-05 PDF

    JTP 00 High-speed double diode

    Abstract: BAW56W
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BAW56W High-speed double diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification High-speed double diode


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    M3D102 BAW56W BAW56W OT323 JTP 00 High-speed double diode PDF

    sot143 marking code JTp

    Abstract: JTP 75 diode JTp smd diode MAM059 M3D070 BAS28 SMD MARKING CODE jtp marking JTp JTP 85 diode BAS28 JTp
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D070 BAS28 High-speed double diode Product specification Philips Semiconductors Product specification High-speed double diode BAS28 FEATURES DESCRIPTION • Small plastic SMD package The BAS28 consists of two


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    M3D070 BAS28 BAS28 OT143 sot143 marking code JTp JTP 75 diode JTp smd diode MAM059 M3D070 SMD MARKING CODE jtp marking JTp JTP 85 diode BAS28 JTp PDF

    DIODE smd marking A4t

    Abstract: smd marking code A4t smd a4t A4t smd MSA370 DIODE smd marking A4 SOT363 diode a4t A4t diode smd code A4t marking A4t
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MBD128 BAV70S High-speed double diode array Product specification Supersedes data of 1997 Aug 27 File under Discrete Semiconductors, SC01 1997 Oct 21 Philips Semiconductors Product specification High-speed double diode array


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    MBD128 BAV70S OT363 SC-88 DIODE smd marking A4t smd marking code A4t smd a4t A4t smd MSA370 DIODE smd marking A4 SOT363 diode a4t A4t diode smd code A4t marking A4t PDF

    smd diode A4

    Abstract: smd diode code A4 BAV70W K450
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BAV70W High-speed double diode Product specification Supersedes data of 1996 Sep 17 File under Discrete Semiconductors, SC01 1997 Dec 08 Philips Semiconductors Product specification High-speed double diode


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    M3D102 BAV70W BAV70W OT323 SC-70 smd diode A4 smd diode code A4 K450 PDF

    Contextual Info: TSHG5410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero Description TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and high speed, molded in a clear,


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    TSHG5410 TSHG5410 2002/95/EC 08-Apr-05 PDF

    Contextual Info: TSHG5210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero Description TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and high speed, molded in a clear,


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    TSHG5210 TSHG5210 2002/95/EC 08-Apr-05 PDF

    Contextual Info: TSHG6210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero Description TSHG6210 is an infrared, 850 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and high speed, molded in a clear,


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    TSHG6210 TSHG6210 2002/95/EC 08-Apr-05 PDF

    Contextual Info: TSHG6410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero Description TSHG6410 is an infrared, 850 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and high speed, molded in a clear,


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    TSHG6410 TSHG6410 2002/95/EC 08-Apr-05 PDF

    A2 DIODE SMD CODE MARKING

    Abstract: marking code NA sot23 marking CODE R SMD DIODE smd diode marking code PMBD2837 PMBD2838
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD2837; PMBD2838 High-speed double diodes Product specification Supersedes data of April 1996 1996 Sep 18 Philips Semiconductors Product specification High-speed double diodes FEATURES • Small plastic SMD package


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    M3D088 PMBD2837; PMBD2838 PMBD2837 A2 DIODE SMD CODE MARKING marking code NA sot23 marking CODE R SMD DIODE smd diode marking code PMBD2837 PMBD2838 PDF

    DIODE smd marking A4

    Abstract: smd diode A4 smd transistor a4 A CLIPPER CIRCUIT APPLICATIONS 1SS303 marking a4 a4 marking A4 marking diode a4 smd transistor smd A4
    Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS303 Features Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.


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    1SS303 DIODE smd marking A4 smd diode A4 smd transistor a4 A CLIPPER CIRCUIT APPLICATIONS 1SS303 marking a4 a4 marking A4 marking diode a4 smd transistor smd A4 PDF

    smd diode a6

    Abstract: smd diode marking a6 DIODE A6 marking A6 A CLIPPER CIRCUIT APPLICATIONS 1SS304 smd transistor A6 A6 DIODE SMD a6 Transistor
    Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS304 Features Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.


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    1SS304 smd diode a6 smd diode marking a6 DIODE A6 marking A6 A CLIPPER CIRCUIT APPLICATIONS 1SS304 smd transistor A6 A6 DIODE SMD a6 Transistor PDF

    DIODE smd marking A4

    Abstract: smd diode code A4 BAV70T SC-75
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BAV70T High-speed double diode Product specification Supersedes data of 1997 Dec 19 2004 Feb 04 Philips Semiconductors Product specification High-speed double diode BAV70T FEATURES PINNING • Very small plastic SMD package


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    M3D173 BAV70T SCA76 R76/03/pp9 DIODE smd marking A4 smd diode code A4 BAV70T SC-75 PDF

    Contextual Info: VSMB1940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power and high speed, molded in clear, untinted 0805 plastic


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    VSMB1940X01 AEC-Q101 J-STD-020 2002/95/EC 2002/96/EC VSMB1940X01 2011/65/EU 2002/95/EC. 2011/65/EU. PDF