HIGH POWER TRANSISTOR GUIDE Search Results

IC-3479

Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits

IC-6339

Abstract: PA1453 IEI-1213 MEI-1202 MF-1134 ic 926
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1453 PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µ PA1453 is PNP silicon epitaxial Power Transistor in millimeters Array that built in 4 circuits designed for driving solenoid,

mp4301

Abstract: mp43
Contextual Info: MP4301 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type Darlington power transistor 4 in 1 MP4301 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Small package by full molding (SIP 12 pin) •

pnp darlington array

Abstract: pnp DARLINGTON TRANSISTOR ARRAY MP4006
Contextual Info: MP4006 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type Darlington power transistor 4 in 1 MP4006 Industrial Applications High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Small package by full molding (SIP 10 pin)

MP4303

Contextual Info: MP4303 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type Darlington power transistor 4 in 1 MP4303 Industrial Applications High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Small package by full molding (SIP 12 pin)

MP4101

Abstract: MP410
Contextual Info: MP4101 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type Darlington power transistor 4 in 1 MP4101 Industrial Applications High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching. Unit: mm • Small package by full molding (SIP 10 pin)

2SD2449

Abstract: 2-21F1A 2SB1594
Contextual Info: 2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2449 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SB1594 Maximum Ratings (Ta = 25°C) Characteristics

MP4501

Contextual Info: MP4501 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type Darlington power transistor 4 in 1 MP4501 Industrial Applications High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Package with heat sink isolated to lead (SIP 12 pin)

MP4003

Abstract: pnp DARLINGTON TRANSISTOR ARRAY MP4009
Contextual Info: MP4009 TOSHIBA Power Transistor Module Silicon PNP Triple Diffused Type Darlington power transistor 4 in 1 MP4009 Industrial Applications High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching. Unit: mm • Small package by full molding (SIP 10 pin)

pnp darlington array

Abstract: pnp DARLINGTON TRANSISTOR ARRAY MP4503
Contextual Info: MP4503 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type Darlington power transistor 4 in 1 MP4503 Industrial Applications High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. • Package with heat sink isolated to lead (SIP 12 pin)

2SD2480

Abstract: D2480
Contextual Info: 2SD2480 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2480 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

D2088 TRANSISTOR

Abstract: D2088 transistor D2088 epitaxial transistor high voltage 2SD2088
Contextual Info: 2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

Contextual Info: SAfiYO Power Transistor Surface Mount Package SMP Surface Mount Power In recent years surface mount semiconductor products have found wide application from small-signal consumer equipment to high-power industrial equipment. To meet user needs, we offer Sanyo power transistor surface mount package SMP (Surface Mount Power) that makes possible

transistor D1658

Abstract: d1658 2SD1658
Contextual Info: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

transistor D1658

Abstract: d1658 2SD1658
Contextual Info: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

2sd1314

Abstract: 2-21F1A 2Sd13
Contextual Info: 2SD1314 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1314 High Power Switching Applications Motor Control Applications Unit: mm • High DC current gain: hFE = 100 (min) (VCE = 5 V, IC = 15 A) • Low saturation voltage: VCE (sat) = 2 V (max) (IC = 15 A, IB = 0.4 A)

D1631 transistor npn

Abstract: D1631 2-7D101A 2SD1631
Contextual Info: 2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

b1067

Abstract: B-1067 2SB1067
Contextual Info: 2SB1067 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1067 Industrial Applications Micro-Moter Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)

2sd1525 toshiba

Contextual Info: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.

FPD1500DFN

Abstract: FPD750DFN FPD750SOT89
Contextual Info: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a

FPD1500

Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
Contextual Info: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a

2SK1758

Abstract: 2SK1758 E
Contextual Info: DATA SHEET NEC Æ 1 H MOS B FIELD 1 EFFECT POWER TRANSISTOR 2SK1758 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1758 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in m illim eters designed for high voltage switching applications.

Contextual Info: 2SB1557 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2386 ¿ 3 .2 ±0.2 MAXIMUM RATINGS (Ta = 25°C)

transistor 1012 F

Abstract: transistor 1012 CSA1012 1012 transistor 1012 npn
Contextual Info:  Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise