HIGH POWER TRANSISTOR 6 GHZ Search Results

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 1997 Oct 29 NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION • High power gain NPN wideband transistor in a plastic

BFG94

Abstract: MBB780 TRANSISTOR HANDBOOK MBB788
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG94 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFG94 PINNING • High power gain

TRANSISTOR ML6

Abstract: TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFQ270 PINNING • High power gain

transistor marking R2p

Abstract: SOT23 R2P BFR91A transistor datasheet MBB264 BFR91A BFR93A BFT93 MSB003 transistor BFR93A MBG246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 1997 Oct 29 NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION • High power gain

BPT23E06

Contextual Info: BIPOLARICS, INC. Part Number BPT23E06 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • High Output Power 6 Watts @ 2.3 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 1.08 A t Bipolarics' BPT23E06 is a high performance silicon bipolar transistor

BPT23E06

Abstract: BPT30E06
Contextual Info: BIPOLARICS, INC. Part Number BPT30E06 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • High Output Power 6 Watts @ 3.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 1.08 A t Bipolarics' BPT30E06 is a high performance silicon bipolar transistor

BFG94

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG94 NPN 6 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFG94 PINNING • High power gain PIN  Low noise figure 1 emitter

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG94 NPN 6 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFG94 PINNING • High power gain PIN  Low noise figure 1 emitter  Low intermodulation distortion

Contextual Info: Agilent AT-42086 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz Agilent’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The

at42085g

Abstract: at-42085g AT42085 AT4208 42085
Contextual Info: Agilent AT-42085 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz Description Agilent’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency

AT-42035

Abstract: micro-x 420
Contextual Info: What mLliM HEWLETT* PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features different functions. The 20 emitter finger interdigitated geometry • High Output Power: yields a medium sized transistor 21.0 dBm Typical PldB at 2.0 GHz

common emitter amplifier

Abstract: zo 107 P 55 NFO transistor w 04 59 UHF transistor GHz AT-42070 S21E AT42070
Contextual Info: AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42070 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42070 is housed in a hermetic, high reliability

transistor C200

Abstract: AT-42010 IFD-53010 S21E AT42010
Contextual Info: AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency ­performance. The AT-42010 is housed in a hermetic, high reliability

Contextual Info: What HEWLETTÍ mLfíM PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features functions. The 20 emitter finger interdigitated geometry yields a • High Output Power: 12.0 dBm Typical PxdB at 2.0 GHz medium sized transistor with

AT-42035

Abstract: AT42035G AT-42035G
Contextual Info: Agilent AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz Description Agilent’s AT-42035 is a general purpose NPN bipolar transistor that

Contextual Info: Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz Description Agilent’s AT-42036 is a general purpose NPN bipolar transistor that

BMT1417B06

Abstract: high power transistor 6 GHz W12100
Contextual Info: BIPOLARICS, INC Part Number BMT1417B06 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base, Class C Package Configuration • High Output Power 6 W @ 1.4 to 1.7 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 960 mA t • High Gain

"Bipolar Transistor"

Abstract: TRANSISTOR 12 GHZ TRANSISTOR 80 GHZ 136.21 AT-42010 TRANSISTOR 200 GHZ UHF transistor GHz S21E
Contextual Info: AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron

W12100

Abstract: BMT1720B06
Contextual Info: BIPOLARICS, INC Part Number BMT1720B06 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base, Class C Package Configuration • High Output Power 6 W @ 1.7 to 2.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 960 mA t • High Gain

MBB262

Abstract: MBB255 MCD089
Contextual Info: BFR93AR NPN 6 GHz wideband transistor Rev. 01 — 30 November 2006 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. 1.2 Features • Very high power gain ■ Low noise figure

AT-42035

Abstract: AT-42035G micro-x 420 S21E 35 micro-X ceramic Package AT42035G
Contextual Info: AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago Technologies' AT-42035 is a general purpose NPN bipolar transistor that offers excellent high ­frequency performance. The AT‑42035 is housed in a cost effective surface mount 100

BFR91A

Abstract: S parameters of BFR93AR GHz transistor BFR93AR BFT93 IMD2 transistor
Contextual Info: BFR93AR NPN 6 GHz wideband transistor Rev. 01 — 30 November 2006 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. 1.2 Features • Very high power gain ■ Low noise figure

BPT20B06

Contextual Info: BIPOLARICS, INC Part Number BPT20B06 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Output Power 6 W @ 2.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 480 m A t • High Gain GPE = 7.5 dB @ 2.0 GHz

Contextual Info: BIPOLARICS, INC Part Number BPT1B6 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Output Power 6 W @ 1.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 960 mA t • High Gain GPE = 9.5 dB @ 1.0 GHz