HIGH POWER MICROWAVE DEVICE Search Results

high power fet amplifier schematic

Abstract: GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal
Contextual Info: Application of Loadline Simulation to Microwave High Power Amplifiers Edward L. Griffin Abstract Loadline theory is described as applied to high power microwave amplifiers. An example design with simulation is presented. Introduction The design of microwave GaAs high power amplifiers HPAs to demanding

DH80154

Abstract: DH80080 DH80106 DH80051 DH80055 dh80102 BH200 DH80100 DH80120 SH93103
Contextual Info: SILICON PIN DIODES High voltage PIN diodes MICROWAVE HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.

LD79A02K

Abstract: NEC RF Switch 1998 NEC RF Switch
Contextual Info: DATA S H E E T MICROWAVE POWER MODULE FOR COMMUNICATIONS LD79A02K 30 GHz, 20 W CW, LIGHT WEIGHT, COMPACT, EFFICIENT GENERAL DESCRIPTION MPM stands for Microwave Power Module and is the solution introduced by NEC for a microwave power source with high efficiency and the most compact size.

PTB23006U

Abstract: MLC718 SOT440A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PTB23006U Microwave power transistor Preliminary specification Supersedes data of December 1994 1997 Feb 19 Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors

Contextual Info: TOSHIBA MICROWAVE POWER GaAs MMIC TMD0507-2A MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Broadband Internally Matched PldB=33dBm at 5.1 to 7.2GHz ■ Hermetically Sealed Package High Gain GldB=22dB at 5.1 to 7.2GHz ABSOLUTE MAXIMUM RATINGS Ta=25°C

E 1007

Abstract: PTB23002U
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PTB23002U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network

sensor microwave

Abstract: high power microwave transmitter microwave sensor IEC-529 ipx5 ha6010
Contextual Info: HBH 14.0 – 16.0 GHz High Power Amplifier Microwave GmbH HA6010 General Description The HA6010 is a high power amplifier modul for applications in Ku-Band. The high gain and high output power makes this device an ideal choice as a high power amplifier for

Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD5872-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=34.0dBm at 5.8GHz to 7.2GHz n HIGH GAIN G1dB=29.0dB at 5.8GHz to 7.2GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS Ta= 25°C

pin photodiode 10 ghz

Abstract: photodiode pin photodiode 1550 pin photodiode 2 GHz 1550
Contextual Info: 2522 Microwave Packaged Photodiode MICROWAVE The 2522 packaged photodiode incorporates a high-speed planar PIN photodiode to provide a highly reliable, high-power photodiode component. This package is well suited for receiver applications with optical preamplification.

CLY38

Abstract: CLY38-00 CLY38-05 CLY38-10
Contextual Info: CLY38 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.2 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application

CLY29

Abstract: CLY29-00 CLY29-05 CLY29-10
Contextual Info: CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application

CLX30

Abstract: CLX30-00 CLX30-05 CLX30-10 siemens 230 98 O
Contextual Info: CLX30 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application

CLY29

Abstract: CLY29-00 CLY29-05 CLY29-10
Contextual Info: CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application

microwave sensor

Abstract: power amplifier ha6011
Contextual Info: HBH 8.0 – 12.0 GHz High Power Amplifier Microwave GmbH HA6011/2 General Description The HA6011/2 is a high power amplifier modul for applications in Ku-Band. The high gain and high output power makes this device an ideal choice as a high power amplifier for

CLX30

Abstract: CLX30-00 CLX30-05 CLX30-10 d 882 p 063DB
Contextual Info: CLX30 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application

high power microwave transmitter

Abstract: microwave sensor 145mm power amplifier 12 GHZ High Power Microwave Device 90-GHz
Contextual Info: HBH 8.0 – 12.0 GHz High Power Amplifier Microwave GmbH HA6011/4 General Description The HA6011/4 is a high power amplifier modul for applications in Ku-Band. The high gain and high output power makes this device an ideal choice as a high power amplifier for

high power microwave transmitter

Abstract: microwave sensor 145mm microwave sensor modul sensor microwave
Contextual Info: HBH 2.0 – 18.0 GHz Broadband High Power Amplifier Microwave GmbH HA6012 General Description The HA6012 is a very broadband high power amplifier modul for broadband applications. The high gain and high output power makes this device an ideal choice as a high power amplifier for

microwave sensor

Abstract: high power microwave transmitter power amplifier high power amplifier
Contextual Info: HBH 8.0 – 12.0 GHz High Power Amplifier Microwave GmbH HA6011/1 General Description The HA6011/1 is a high power amplifier modul for applications in Ku-Band. The high gain and high output power makes this device an ideal choice as a high power amplifier for

CLX34

Abstract: CLX34-00 CLX34-05 CLX34-10
Contextual Info: CLX34 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 10 GHz • Hermetically sealed microwave power package • • • Low thermal resistance for high voltage application

CLY35

Abstract: CLY35-00 CLY35-05 CLY35-10 0244
Contextual Info: CLY35 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.5 GHz • Hermetically sealed microwave power package • • Low thermal resistance for high voltage application

TMD0507-2A

Contextual Info: TOSHIBA MICROWAVE POWER GaAs MMIC TMD0507-2A MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power ■ Broadband Internally Matched PldB=33dBm a t 5.1 to 7.2GHz ■ ■ Hermetically Sealed Package High Gain GldB=22dB a t 5.1 to 7.2GHz ABSOLUTE MAXIMUM RATINGS Ta=25°C

4431 8 PIN

Abstract: 2N4430 2N4429 2N4431 2NS4429 to-117a
Contextual Info: li _n_Mm ra. m 140 Commerce Drive m lC rU S & n il Jet: Montgomeryvilie, PA 18936 215 631-9840 2N4429 -> 4431 s P&msfsxf ò y TaeR rtoissy RF & MICROWAVE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS FOR CLASS C APPLICATIONS FEATURES HIGH POWER GAIN 2N4431

Harris Semiconductor 286

Abstract: 7106-10p
Contextual Info: HMM-10610 GaAs Monolithic Microwave Integrated Circuit 2 - 6 GHz MMIC Amplifier PRELIM INARY PRO DUCT DATA NOVEMBER 1987 HARRIS MICROWAVE SEMICONDUCTOR DEVICE OUTLINE FEATURES O Broadband Performance □ 100 mW Output Power Capability O Submicrometer Gate Length for High Gain and

transistor p1d

Abstract: P1D transistor BPT15V1E1E
Contextual Info: BIPOLARICS, INC. Part Number BPT15V1E1E SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' BPT15V1E1E is a high performance silicon bipolar transistor intended for medium power linear and Class C applications at VHF, UHF and microwave frequencies in 7.2