HIGH POWER FET AMPLIFIER SCHEMATIC Search Results

IL062

Abstract: IL062N TL062C IL062D il0621
Contextual Info: TECHNICAL DATA IL062 Low Power J-FET DUAL OPERATIONAL AMPLIFIERS The IL062 is high speed J-FET input dual operational amplifier. This J-FET input operational amplifier incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.

il0621

Abstract: IL062 TL062C IL062N IL062D
Contextual Info: TECHNICAL DATA IL062 Low Power J-FET DUAL OPERATIONAL AMPLIFIERS The IL062 is high speed J-FET input dual operational amplifier. This J-FET input operational amplifier incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.

2SK1814

Abstract: 86J Amplifier suis
Contextual Info: 2SK1814 FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET F-III SERIES I Features Outline Drawings High current _ow no-resistance Mo secondary breakdown _ow driving power High forward Transconductance I Applications Vlotor controllers 3enaral purpose power amplifier

cree MOS

Abstract: 2SK1387-MR T151 a2197
Contextual Info: 2SK1387-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-III SERIES Outline Drawings I Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance •Applications Motor controllers General purpose power amplifier

A2140

Abstract: SK1089 ha 7681 T151
Contextual Info: 2SK1089 FUJI POWER MOS-FET N-CHANIMEL SILICON POWER MOS-FET F-III SERIES • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • Motor controllers • General purpose power amplifier

2SK1506

Abstract: SC-65 A2216 2SK1506 equivalent
Contextual Info: 2SK1506 FUJI POWER MOS-FET IJ-CHANNEL SILICON POWER MOS-FET F-III SERIES • Featu res Outline Drawings '* High current # Low no-resistance «»Low driving power liHigh forward Transconductance 111Applications «I»Motor controllers ■iGenaral purpose power amplifier

2SK1086-MR

Abstract: T151
Contextual Info: ÏSK1086-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -III S E R IE S Outline Drawings I Features High current Low on-resistance I Jo secondary breakdown l ow driving power High forward Transconductance •Applications Motor controllers General purpose power amplifier

pj 899 diode

Abstract: 2SK899 pj 899 SC-65 T151
Contextual Info: 2SK899 FUJI POW ER MOS^FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES lOutline Drawings I Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage •Applications Switching regulators U PS 1DC-DC converters 'General purpose power amplifier

C 5388

Abstract: TFK U 216 B 2SK1506 TFK 03 Diode SC-65 diode s .* tfk TFK S
Contextual Info: 2SK1506 FUJI POWER MOS-FET U-CHANNEL SILICON POWER MOS-FET F-III SERIES • Features Outline Drawings "»High current <i*Low no-resistance «»Low driving power #High forward Transconductance III Applications •>Motor controllers ■«»Genaral purpose power amplifier

transistor c237

Abstract: capacitor 471 c221 capacitor TRANSISTOR c104 C103 c104 c804 TL227 c221 TRANSISTOR C11256 B0828
Contextual Info: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include

OAAI

Abstract: A2140
Contextual Info: 2SK1089 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • Motor controllers • General purpose power amplifier

PTFB210801

Abstract: NFM18PS105R0J3D TRANSISTOR tl131 tl117 C210 TL127 490-4393-2-ND tl-101-2 800A150GT
Contextual Info: PTFB210801FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz

Contextual Info: PTFA181001GL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805 – 1880 MHz Description The PTFA181001GL is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz

A2265

Abstract: 2SK1881-L A2-265 a/A2265-12/12
Contextual Info: 2SK1881-L. S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F -III I Features S E R I E S O utline D raw ings High current Low on-resistance No secondary breakdown Low driving power High forw ard Transconductance I Applications M otor controllers General purpose power amplifier

TL235

Abstract: ATC100B301JW200X
Contextual Info: PTVA030121EA Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and a thermally-enhanced package.

transistor TL131

Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110

TL235

Contextual Info: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency

LM7805ACH-ND

Abstract: TL174 tl173 PTVA035002EV V1
Contextual Info: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features

C109 ceramic capacitor

Abstract: TL235
Contextual Info: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110

PTFB212507SH

Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110

ATC100B6R2CT500X

Abstract: TL230 TL235 TL156 TL247 C20210 ATC100B100FW500X TL140 TL251 TL126
Contextual Info: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110

TL235

Abstract: tl241 TL234 TL240 PTVA030121EA bd 302 transistor TL205 TL2082 ATC100B9R1BW500XB R807
Contextual Info: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency

TL061

Abstract: TL061I TL061C TL061IN TL061M TL061A TL061B
Contextual Info: TL061 TL061A - TL061B LOW POWER J-FET SINGLE OPERATIONAL AMPLIFIER . . . . . VERY LOW POWER CONSUMPTION : 200µA WIDE COMMON-MODE UP TO VCC+ AND DIFFERENTIAL VOLTAGE RANGES LOW INPUT BIAS AND OFFSET CURRENTS OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE J-FET INPUT

TRANSISTOR tl131

Abstract: TL235 TL231 TL137 tl117 TL130 tl134 Tl232 C804 tl127
Contextual Info: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.