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    HIGH FREQUENCY TRANSISTOR DATASHEET Search Results

    HIGH FREQUENCY TRANSISTOR DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    CLF1G0035-100P
    Rochester Electronics LLC CLF1G0035-100 - 100W Broadband RF power GaN HEMT PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    LXMSJZNCMH-225
    Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag PDF
    LXMS21NCMH-230
    Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag PDF

    HIGH FREQUENCY TRANSISTOR DATASHEET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: <Semi-Condaato\ fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5943 The RF Idne 1.2 GHz -50 mAde NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON


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    2N5943 50dBmVI 40dBmVI 50dBmV) PDF

    BUJ105AB

    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 D2-PAK surface-mount package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching


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    BUJ105AB OT404 BUJ105AB PDF

    4619V

    Abstract: NPN transistor Electronic ballast to92
    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT54 TO92 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.


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    BUJ100B 4619V NPN transistor Electronic ballast to92 PDF

    CD 1691 CB

    Abstract: NEC 7924 NEC D 986 IC - 7434
    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 10 GHz TYP. • Low Noise, High Gain •


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    2SC5013 2SC5013-T1 2SC5013-T2 CD 1691 CB NEC 7924 NEC D 986 IC - 7434 PDF

    BUT11AI

    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control


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    BUT11AI O220AB BUT11AI PDF

    KSC3114

    Contextual Info: KSC3114 KSC3114 Audio Frequency Amplifier High Frequency OSC. • High Current Gain : hFE=280~560 • Collector-Base Voltage : VCBO=60V • High Current Gain Bandwidth Product : fT=300MHz TYP. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor


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    KSC3114 300MHz KSC3114 PDF

    IRGBC40U

    Abstract: D-12
    Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


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    IRGBC40U O-220AB C-668 IRGBC40U D-12 PDF

    IRGB440U

    Abstract: D-12 C588 C590 transistor irgb440
    Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


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    IRGB440U O-220AB O-220 C-592 IRGB440U D-12 C588 C590 transistor irgb440 PDF

    IRGBC30U

    Abstract: D-12
    Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


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    IRGBC30U O-220AB C-662 IRGBC30U D-12 PDF

    ksc945

    Abstract: KSA733
    Contextual Info: KSC945 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC. TO-92 • Complement to KSA733 • Collector-Base Voltage VCBO=60V • High Current Gain Bandwidth Product fT=300MHz Typ ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic


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    KSC945 KSA733 300MHz ksc945 KSA733 PDF

    2SA838

    Abstract: 2SC1359
    Contextual Info: Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA838 Unit: mm 5.0±0.2 4.0±0.2 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 0.7±0.2 ● • Absolute Maximum Ratings 12.9±0.5


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    2SC1359 2SA838 2SA838 2SC1359 PDF

    Contextual Info: Transistor 2SC5419 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 • Features High collector to emitter voltage VCEO. High transition frequency fT. Allowing supply with the radial taping. ● ■ Absolute Maximum Ratings


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    2SC5419 PDF

    2SA838

    Abstract: 2SA0838 2SC1359
    Contextual Info: Transistor 2SA0838 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC1359 Unit: mm 5.0±0.2 5.1±0.2 • Features 0.7±0.2 High transition frequency fT. ■ Absolute Maximum Ratings 12.9±0.5 0.7±0.1 (Ta=25˚C)


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    2SA0838 2SA838) 2SC1359 2SA838 2SA0838 2SC1359 PDF

    2SA1748

    Abstract: 2SC4562
    Contextual Info: Transistor 2SC4562 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1748 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● 2.1±0.1 ● 3 High transition frequency fT. Small collector output capacitance Cob.


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    2SC4562 2SA1748 2SA1748 2SC4562 PDF

    FJX945

    Abstract: FJX733
    Contextual Info: FJX945 FJX945 Audio Frequency Amplifier High Frequency OSC. 3 • Collector-Base Voltage VCBO=60V • High Current Gain Bandwidth Product fT=300MHz Typ • Complement to FJX733 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor


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    FJX945 300MHz FJX733 OT-323 FJX733 FJX945OTF FJX945RTF FJX945YTF FJX945 PDF

    KSP5179

    Abstract: Common emitter amplifier
    Contextual Info: KSP5179 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TA=25°C) Derate above 25°C


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    KSP5179 KSP5179 Common emitter amplifier PDF

    2SC3935

    Contextual Info: Transistor 2SC3935 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● 2.1±0.1 ● 3 High transition frequency fT. Small collector output capacitance Cob and common base reverse


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    2SC3935 2SC3935 PDF

    KSA1175

    Abstract: KSC2785
    Contextual Info: KSC2785 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC. TO-92S • Complement to KSA1175 • Collector-Base Voltage VCBO=60V ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    KSC2785 O-92S KSA1175 KSA1175 KSC2785 PDF

    Contextual Info: KSA1220/1220A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER TO -126 • Complement to KSC2690/KSC2690A ABSOLUTE MAXIMUM RATINGS C haracteristic Collector-Base Voltage Symbol : KAS1220 VcB O : KAS1220A Collector-Emitter Voltage


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    KSA1220/1220A KSC2690/KSC2690A KAS1220 KAS1220A PDF

    2SA1022

    Abstract: 2SC2295
    Contextual Info: Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 ñ0.05 • Features ● 0.4±0.2 5° Optimum for RF amplification of FM/AM radios. High transition frequency fT. Mini type package, allowing downsizing of the equipment and


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    2SC2295 2SA1022 2SA1022 2SC2295 PDF

    j4313

    Abstract: j4313-o c5242 2sc5200 amplifier circuit
    Contextual Info: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.


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    2SC5242/FJA4313 130watts 30MHz. 2SA1962/FJA4213. --TO264 2SC5200/FJL4315 --TO220 FJP5200 --TO220F j4313 j4313-o c5242 2sc5200 amplifier circuit PDF

    2SC3931

    Contextual Info: Transistor 2SC3931 Silicon NPN epitaxial planer type For high-frequency amplification 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and


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    2SC3931 2SC3931 PDF

    2SC1047

    Abstract: SC-43A
    Contextual Info: Transistor 2SC1047 Silicon NPN epitaxial planar type Unit: mm For high-frequency amplification 4.0±0.2 5.1±0.2 5.0±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.7±0.2 • Features 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C


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    2SC1047 SC-43A O-92-B1 2SC1047 SC-43A PDF

    high frequency transistor

    Contextual Info: KSP5179 KSP5179 High Frequency Transistor TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO VEBO IC PC PC Parameter Value 20 Units V Collector-Emitter Voltage


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    KSP5179 high frequency transistor PDF