HIGH FREQUENCY TRANSISTOR DATASHEET Search Results

Contextual Info: <Semi-Condaato\ fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5943 The RF Idne 1.2 GHz -50 mAde NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON

BUJ105AB

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 D2-PAK surface-mount package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching

4619V

Abstract: NPN transistor Electronic ballast to92
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT54 TO92 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

CD 1691 CB

Abstract: NEC 7924 NEC D 986 IC - 7434
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 10 GHz TYP. • Low Noise, High Gain •

BUT11AI

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control

KSC3114

Contextual Info: KSC3114 KSC3114 Audio Frequency Amplifier High Frequency OSC. • High Current Gain : hFE=280~560 • Collector-Base Voltage : VCBO=60V • High Current Gain Bandwidth Product : fT=300MHz TYP. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor

IRGBC40U

Abstract: D-12
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

IRGB440U

Abstract: D-12 C588 C590 transistor irgb440
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

IRGBC30U

Abstract: D-12
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

ksc945

Abstract: KSA733
Contextual Info: KSC945 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC. TO-92 • Complement to KSA733 • Collector-Base Voltage VCBO=60V • High Current Gain Bandwidth Product fT=300MHz Typ ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic

2SA838

Abstract: 2SC1359
Contextual Info: Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA838 Unit: mm 5.0±0.2 4.0±0.2 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 0.7±0.2 ● • Absolute Maximum Ratings 12.9±0.5

Contextual Info: Transistor 2SC5419 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 • Features High collector to emitter voltage VCEO. High transition frequency fT. Allowing supply with the radial taping. ● ■ Absolute Maximum Ratings

2SA838

Abstract: 2SA0838 2SC1359
Contextual Info: Transistor 2SA0838 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC1359 Unit: mm 5.0±0.2 5.1±0.2 • Features 0.7±0.2 High transition frequency fT. ■ Absolute Maximum Ratings 12.9±0.5 0.7±0.1 (Ta=25˚C)

2SA1748

Abstract: 2SC4562
Contextual Info: Transistor 2SC4562 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1748 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● 2.1±0.1 ● 3 High transition frequency fT. Small collector output capacitance Cob.

FJX945

Abstract: FJX733
Contextual Info: FJX945 FJX945 Audio Frequency Amplifier High Frequency OSC. 3 • Collector-Base Voltage VCBO=60V • High Current Gain Bandwidth Product fT=300MHz Typ • Complement to FJX733 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor

KSP5179

Abstract: Common emitter amplifier
Contextual Info: KSP5179 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TA=25°C) Derate above 25°C

2SC3935

Contextual Info: Transistor 2SC3935 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● 2.1±0.1 ● 3 High transition frequency fT. Small collector output capacitance Cob and common base reverse

KSA1175

Abstract: KSC2785
Contextual Info: KSC2785 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC. TO-92S • Complement to KSA1175 • Collector-Base Voltage VCBO=60V ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: KSA1220/1220A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER TO -126 • Complement to KSC2690/KSC2690A ABSOLUTE MAXIMUM RATINGS C haracteristic Collector-Base Voltage Symbol : KAS1220 VcB O : KAS1220A Collector-Emitter Voltage

2SA1022

Abstract: 2SC2295
Contextual Info: Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 ñ0.05 • Features ● 0.4±0.2 5° Optimum for RF amplification of FM/AM radios. High transition frequency fT. Mini type package, allowing downsizing of the equipment and

j4313

Abstract: j4313-o c5242 2sc5200 amplifier circuit
Contextual Info: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.

2SC3931

Contextual Info: Transistor 2SC3931 Silicon NPN epitaxial planer type For high-frequency amplification 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and

2SC1047

Abstract: SC-43A
Contextual Info: Transistor 2SC1047 Silicon NPN epitaxial planar type Unit: mm For high-frequency amplification 4.0±0.2 5.1±0.2 5.0±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.7±0.2 • Features 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C

high frequency transistor

Contextual Info: KSP5179 KSP5179 High Frequency Transistor TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO VEBO IC PC PC Parameter Value 20 Units V Collector-Emitter Voltage