HIGH FREQUENCY TRANSISTOR DATASHEET Search Results

BUJ105AB

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 D2-PAK surface-mount package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching

4619V

Abstract: NPN transistor Electronic ballast to92
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT54 TO92 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

CD 1691 CB

Abstract: NEC 7924 NEC D 986 IC - 7434
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 10 GHz TYP. • Low Noise, High Gain •

BUT11AI

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control

KSC3114

Contextual Info: KSC3114 KSC3114 Audio Frequency Amplifier High Frequency OSC. • High Current Gain : hFE=280~560 • Collector-Base Voltage : VCBO=60V • High Current Gain Bandwidth Product : fT=300MHz TYP. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor

IRGB440U

Abstract: D-12 C588 C590 transistor irgb440
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

IRGBC30U

Abstract: D-12
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

2SA838

Abstract: 2SC1359
Contextual Info: Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA838 Unit: mm 5.0±0.2 4.0±0.2 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 0.7±0.2 ● • Absolute Maximum Ratings 12.9±0.5

2SA838

Abstract: 2SA0838 2SC1359
Contextual Info: Transistor 2SA0838 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC1359 Unit: mm 5.0±0.2 5.1±0.2 • Features 0.7±0.2 High transition frequency fT. ■ Absolute Maximum Ratings 12.9±0.5 0.7±0.1 (Ta=25˚C)

2SA1748

Abstract: 2SC4562
Contextual Info: Transistor 2SC4562 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1748 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● 2.1±0.1 ● 3 High transition frequency fT. Small collector output capacitance Cob.

2SA1748

Abstract: 2SC4562
Contextual Info: Transistor 2SA1748 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4562 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● 2.1±0.1 ● 3 High transition frequency fT. Small collector output capacitance Cob.

2SC3935

Contextual Info: Transistor 2SC3935 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● 2.1±0.1 ● 3 High transition frequency fT. Small collector output capacitance Cob and common base reverse

Contextual Info: KSA1220/1220A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER TO -126 • Complement to KSC2690/KSC2690A ABSOLUTE MAXIMUM RATINGS C haracteristic Collector-Base Voltage Symbol : KAS1220 VcB O : KAS1220A Collector-Emitter Voltage

2SA1022

Abstract: 2SC2295
Contextual Info: Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 ñ0.05 • Features ● 0.4±0.2 5° Optimum for RF amplification of FM/AM radios. High transition frequency fT. Mini type package, allowing downsizing of the equipment and

2SC3931

Contextual Info: Transistor 2SC3931 Silicon NPN epitaxial planer type For high-frequency amplification 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and

2SC1047

Abstract: SC-43A
Contextual Info: Transistor 2SC1047 Silicon NPN epitaxial planar type Unit: mm For high-frequency amplification 4.0±0.2 5.1±0.2 5.0±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.7±0.2 • Features 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C

KSC1623

Abstract: KSA812
Contextual Info: KSC1623 KSC1623 Low Frequency Amplifier & High Frequency OSC. 3 • Complement to KSA812 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

Contextual Info: KSC1815 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier and High-Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package

KSA1175

Abstract: KSC2785
Contextual Info: KSC2785 KSC2785 Audio Frequency Amplifier & High Frequency OSC. • Complement to KSA1175 • Collector-Base Voltage : VCBO=60V TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

C2690A-Y

Abstract: c2690a C-2690a C2690AY KSC2690A 2690A
Contextual Info: KSC2690/2690A KSC2690/2690A Audio Frequency High Frequency Power Amplifier • Complement to KSA1220/KSA1220A TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO

ksc1623y

Contextual Info: KSC1623 KSC1623 Low Frequency Amplifier & High Frequency OSC. 3 • Complement to KSA812 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

Contextual Info: KSA1220/1220A KSA1220/1220A Audio Frequency Power Amplifier High Frequency Power Amplifier • Complement to KSC2690/KSC2690A TO-126 1 1.Emitter 2. Collectors 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSA1175

Contextual Info: KSC2785 KSC2785 Audio Frequency Amplifier & High Frequency OSC. • Complement to KSA1175 • Collector-Base Voltage : VCBO=60V TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

ksc1815

Abstract: KSA1015
Contextual Info: KSC1815 KSC1815 Audio Frequency Amplifier & High Frequency OSC • Complement to KSA1015 • Collector-Base Voltage : VCBO= 50V TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted