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    HIGH FREQUENCY TRANSISTOR DATASHEET Search Results

    HIGH FREQUENCY TRANSISTOR DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    CLF1G0035-100P
    Rochester Electronics LLC CLF1G0035-100 - 100W Broadband RF power GaN HEMT PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    LXMSJZNCMH-225
    Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag PDF
    LXMS21NCMH-230
    Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag PDF

    HIGH FREQUENCY TRANSISTOR DATASHEET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUT11AI

    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control


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    BUT11AI O220AB BUT11AI PDF

    IRGB440U

    Abstract: D-12 C588 C590 transistor irgb440
    Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


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    IRGB440U O-220AB O-220 C-592 IRGB440U D-12 C588 C590 transistor irgb440 PDF

    IRGBC30U

    Abstract: D-12
    Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


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    IRGBC30U O-220AB C-662 IRGBC30U D-12 PDF

    Contextual Info: KSA1220/1220A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER TO -126 • Complement to KSC2690/KSC2690A ABSOLUTE MAXIMUM RATINGS C haracteristic Collector-Base Voltage Symbol : KAS1220 VcB O : KAS1220A Collector-Emitter Voltage


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    KSA1220/1220A KSC2690/KSC2690A KAS1220 KAS1220A PDF

    Contextual Info: KSC1815 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier and High-Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package


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    KSC1815 KSA1015 KSC1815YTA PDF

    Contextual Info: KSA1220/1220A KSA1220/1220A Audio Frequency Power Amplifier High Frequency Power Amplifier • Complement to KSC2690/KSC2690A TO-126 1 1.Emitter 2. Collectors 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    KSA1220/1220A KSC2690/KSC2690A O-126 KSA1220 KSA1220A KSA1220A PW10ms, Cycle50% PDF

    KSA1175

    Contextual Info: KSC2785 KSC2785 Audio Frequency Amplifier & High Frequency OSC. • Complement to KSA1175 • Collector-Base Voltage : VCBO=60V TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    KSC2785 KSA1175 O-92S KSC2785 KSA1175 PDF

    2SA1532

    Abstract: 2SC3930
    Contextual Info: Transistor 2SC3930 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1532 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and


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    2SC3930 2SA1532 2SA1532 2SC3930 PDF

    Contextual Info: KSC1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC TO-92 • Complement to KSC1815 • Collector-Base Voltage VCBO= -50V ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage


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    KSC1815 PDF

    KSC815

    Abstract: KSC815Y KSC815YTA
    Contextual Info: KSC815 KSC815 Low Frequency Amplifier & High Frequency Oscillator • Collector-Base Voltage : VCBO=60V • Complement to KSA539 • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor


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    KSC815 KSA539 KSC815 KSC815Y KSC815YTA PDF

    Contextual Info: KSC1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC • C om plem ent to KSC1815 • Col lector-Base Voltage V Cb o = -50 V ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage


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    KSC1815 PDF

    KSC815

    Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC815 LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR T O -92 • C om plem ent to KSA539 • Col lector-Base Voltage V Cbo = 6 0 V ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage


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    KSC815 KSA539 KSC815 PDF

    2690A TRANSISTOR

    Contextual Info: KSC2690/2690A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY, HIGH FREQUENCY POW ER AMPLIFIER * C om plem ent to KSA1220/KSA 1220A ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic C ollector-Base Voltage S ym bol : KSC2690 VcBO : KSC 2690A C ollector- E m itter Voltage : KSC2690


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    KSC2690/2690A KSA1220/KSA KSC2690 KSC2690 2690A TRANSISTOR PDF

    c849

    Abstract: D-12 IRGBC40K al c850
    Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1073 IRGBC40K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz


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    IRGBC40K O-220AB C-854 c849 D-12 IRGBC40K al c850 PDF

    STO-23

    Abstract: KSA812 KSC1623
    Contextual Info: KSC1623 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY OSC STO-23 • Complement to KSA812 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


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    KSC1623 KSA812 STO-23 STO-23 KSA812 KSC1623 PDF

    2SA1127

    Abstract: 2SC2634
    Contextual Info: Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 5.0±0.2 5.1±0.2 ● Low noise characteristics. High foward current transfer ratio hFE. 0.7±0.2 ● • Absolute Maximum Ratings


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    2SA1127 2SC2634 2SA1127 2SC2634 PDF

    2SA1791

    Abstract: 2SC4656
    Contextual Info: Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4656 Unit: mm 0.2+0.1 –0.05 Parameter Symbol Ratings Unit VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V


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    2SA1791 2SC4656 2SA1791 2SC4656 PDF

    2SC2377

    Contextual Info: Transistor 2SC2377 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 2.5±0.1 • Absolute Maximum Ratings 1.0 4.5±0.1 4.1±0.2 (0.85) (Ta=25˚C) 0.45±0.05 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO


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    2SC2377 2SC2377 PDF

    CAP ALUM F 105

    Abstract: 2030P
    Contextual Info: Preliminary Product Description SP-2030P Stanford offers a high-performance LDMOS Transistor designed for base station applications in the 0.5 to 2.8 GHz frequency range. Ideal for CDMA, W-CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers in Class A or


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    SP-2030P -31dBc MMBTA64, OT-23 SP-2030P CAP ALUM F 105 2030P PDF

    2SC3315

    Contextual Info: Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 2.0±0.2 • Features ● ● ● ■ Absolute Maximum Ratings Parameter Ta=25˚C Symbol Ratings 0.45+0.20 –0.10 Collector to base voltage VCBO 30 V VCEO 20


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    2SC3315 2SC3315 PDF

    C1008Y TRANSISTOR

    Abstract: c1008y C1008YC transistor BU 102 KSC1008 NPN transistor to-92 "high gain" C1008O NPN transistor 500ma TO-92 KSA708 KSC1008C
    Contextual Info: KSC1008 tm NPN Epitacial Silicon Transistor Features • Low frequency amplifier medium speed switching. • High Collector-Base Voltage : VCBO=80V. • Collector Current : IC=700mA • Collector Power Dissipation : PC=800mW TO-92 • Suffix “-C” means Center Collector 1.Emitter 2.Collector 3.Base


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    KSC1008 700mA 800mW KSA708 KSC1008C KSC1008 C1008Y TRANSISTOR c1008y C1008YC transistor BU 102 NPN transistor to-92 "high gain" C1008O NPN transistor 500ma TO-92 KSA708 KSC1008C PDF

    Contextual Info: KSD73 KSD73 Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO = 100V • Collector Current : IC = 5A • Collector Dissipation : PC = 30W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    KSD73 O-220 /new/html/KSD73 PDF

    TF135

    Abstract: bf308
    Contextual Info: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


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    FPNH10 TF135 bf308 PDF

    TLD5045

    Abstract: TLD5045EJ led tail light pwm dimming running light 50nF capacitor diode by 127s smd diode EG - 413 PG-DSO-8-27 ST transistor 647s
    Contextual Info: Infineon Power LED Driver TLD5045EJ 700mA High Integration - DC/DC StepDown Converter Datasheet Rev. 1.0, 2011-05-27 Automotive Power TLD5045EJ Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    TLD5045EJ 700mA TLD5045 TLD5045EJ led tail light pwm dimming running light 50nF capacitor diode by 127s smd diode EG - 413 PG-DSO-8-27 ST transistor 647s PDF