HIGH FREQUENCY TRANSISTOR DATASHEET Search Results

4733 PNP

Contextual Info: HFA3046, HFA3096, HFA3127, HFA3128 Semiconductor Datasheet October 1998 File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Harris Semiconductor’s complementary bipolar UHF-1

Contextual Info: <Semi-Condaato\ fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5943 The RF Idne 1.2 GHz -50 mAde NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON

BUJ105AB

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 D2-PAK surface-mount package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching

4619V

Abstract: NPN transistor Electronic ballast to92
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT54 TO92 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

CD 1691 CB

Abstract: NEC 7924 NEC D 986 IC - 7434
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 10 GHz TYP. • Low Noise, High Gain •

BUT11AI

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control

2N3019CSM

Contextual Info: SEME 2N3019CSM LAB HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2

LCC1

Contextual Info: SEME 2N2857CSM LAB HIGH FREQUENCY NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON NPN TRANSISTOR 0.31 rad. (0.012) • HERMETIC CERAMIC SURFACE MOUNT

2n2857 data sheet

Abstract: vebo 15v sot23 2N2857 2N2857CSM
Contextual Info: SEME 2N2857CSM LAB HIGH FREQUENCY NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON NPN TRANSISTOR 0.31 rad. (0.012) • HERMETIC CERAMIC SURFACE MOUNT

5962F0721805VXC

Contextual Info: Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH The ISL73096, ISL73127 and ISL73128 are radiation Features hardened bipolar transistor arrays. The ISL73096 consists of

ksc3114

Contextual Info: KSC3114 KSC3114 Audio Frequency Amplifier High Frequency OSC. • High Current Gain : hFE=280~560 • Collector-Base Voltage : VCBO=60V • High Current Gain Bandwidth Product : fT=300MHz TYP. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor

KSC3114

Contextual Info: KSC3114 KSC3114 Audio Frequency Amplifier High Frequency OSC. • High Current Gain : hFE=280~560 • Collector-Base Voltage : VCBO=60V • High Current Gain Bandwidth Product : fT=300MHz TYP. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor

IC 7476

Abstract: features of ic 7476 applications IC 7476 of Ic 7476 transistor 076 7476 ic
Contextual Info: 2N2857XCSM HIGH FREQUENCY NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1.02 ± 0.10 (0.04 ± 0.004) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) • SILICON NPN TRANSISTOR

KSC3114

Contextual Info: KSC3114 KSC3114 Audio Frequency Amplifier High Frequency OSC. • High Current Gain : hFE=280~560 • Collector-Base Voltage : VCBO=60V • High Current Gain Bandwidth Product : fT=300MHz TYP. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor

IRGBC40U

Abstract: D-12
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

Transistor C604

Abstract: IRGP430U transistor c603
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.780A IRGP430U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

c613 TRANSISTOR

Abstract: transistor c616 transistor c611 IRGP450U transistor c613
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1033A IRGP450U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

c679 transistor

Abstract: C 679 IRGPC30U
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1032 IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

D-12

Abstract: IRGB430U
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

C-671

Abstract: C673 IRGPC20U transistor C670
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1031 IRGPC20U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

IRGB440U

Abstract: D-12 C588 C590 transistor irgb440
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

IRGBC30U

Abstract: D-12
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

IRGPC40U

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.684A IRGPC40U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

C578

Abstract: C576 C-580 D-12 IRGB420U c575
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.784A IRGB420U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve