HIGH FREQUENCY TRANSISTOR DATASHEET Search Results

BUT11AI

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control

IRGB440U

Abstract: D-12 C588 C590 transistor irgb440
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

IRGBC30U

Abstract: D-12
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: KSA1220/1220A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER TO -126 • Complement to KSC2690/KSC2690A ABSOLUTE MAXIMUM RATINGS C haracteristic Collector-Base Voltage Symbol : KAS1220 VcB O : KAS1220A Collector-Emitter Voltage

Contextual Info: KSC1815 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier and High-Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package

Contextual Info: KSA1220/1220A KSA1220/1220A Audio Frequency Power Amplifier High Frequency Power Amplifier • Complement to KSC2690/KSC2690A TO-126 1 1.Emitter 2. Collectors 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSA1175

Contextual Info: KSC2785 KSC2785 Audio Frequency Amplifier & High Frequency OSC. • Complement to KSA1175 • Collector-Base Voltage : VCBO=60V TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

2SA1532

Abstract: 2SC3930
Contextual Info: Transistor 2SC3930 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1532 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and

Contextual Info: KSC1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC TO-92 • Complement to KSC1815 • Collector-Base Voltage VCBO= -50V ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Collector-Base Voltage

KSC815

Abstract: KSC815Y KSC815YTA
Contextual Info: KSC815 KSC815 Low Frequency Amplifier & High Frequency Oscillator • Collector-Base Voltage : VCBO=60V • Complement to KSA539 • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor

Contextual Info: KSC1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC • C om plem ent to KSC1815 • Col lector-Base Voltage V Cb o = -50 V ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage

KSC815

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC815 LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR T O -92 • C om plem ent to KSA539 • Col lector-Base Voltage V Cbo = 6 0 V ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage

2690A TRANSISTOR

Contextual Info: KSC2690/2690A NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY, HIGH FREQUENCY POW ER AMPLIFIER * C om plem ent to KSA1220/KSA 1220A ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic C ollector-Base Voltage S ym bol : KSC2690 VcBO : KSC 2690A C ollector- E m itter Voltage : KSC2690

c849

Abstract: D-12 IRGBC40K al c850
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1073 IRGBC40K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

STO-23

Abstract: KSA812 KSC1623
Contextual Info: KSC1623 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY OSC STO-23 • Complement to KSA812 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

2SA1127

Abstract: 2SC2634
Contextual Info: Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 5.0±0.2 5.1±0.2 ● Low noise characteristics. High foward current transfer ratio hFE. 0.7±0.2 ● • Absolute Maximum Ratings

2SA1791

Abstract: 2SC4656
Contextual Info: Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4656 Unit: mm 0.2+0.1 –0.05 Parameter Symbol Ratings Unit VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V

2SC2377

Contextual Info: Transistor 2SC2377 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 2.5±0.1 • Absolute Maximum Ratings 1.0 4.5±0.1 4.1±0.2 (0.85) (Ta=25˚C) 0.45±0.05 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO

CAP ALUM F 105

Abstract: 2030P
Contextual Info: Preliminary Product Description SP-2030P Stanford offers a high-performance LDMOS Transistor designed for base station applications in the 0.5 to 2.8 GHz frequency range. Ideal for CDMA, W-CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers in Class A or

2SC3315

Contextual Info: Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 2.0±0.2 • Features ● ● ● ■ Absolute Maximum Ratings Parameter Ta=25˚C Symbol Ratings 0.45+0.20 –0.10 Collector to base voltage VCBO 30 V VCEO 20

C1008Y TRANSISTOR

Abstract: c1008y C1008YC transistor BU 102 KSC1008 NPN transistor to-92 "high gain" C1008O NPN transistor 500ma TO-92 KSA708 KSC1008C
Contextual Info: KSC1008 tm NPN Epitacial Silicon Transistor Features • Low frequency amplifier medium speed switching. • High Collector-Base Voltage : VCBO=80V. • Collector Current : IC=700mA • Collector Power Dissipation : PC=800mW TO-92 • Suffix “-C” means Center Collector 1.Emitter 2.Collector 3.Base

Contextual Info: KSD73 KSD73 Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO = 100V • Collector Current : IC = 5A • Collector Dissipation : PC = 30W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

TF135

Abstract: bf308
Contextual Info: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.

TLD5045

Abstract: TLD5045EJ led tail light pwm dimming running light 50nF capacitor diode by 127s smd diode EG - 413 PG-DSO-8-27 ST transistor 647s
Contextual Info: Infineon Power LED Driver TLD5045EJ 700mA High Integration - DC/DC StepDown Converter Datasheet Rev. 1.0, 2011-05-27 Automotive Power TLD5045EJ Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2