HIGH FREQUENCY TRANSISTOR DATASHEET Search Results

BUT11AI

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control

IRGB440U

Abstract: D-12 C588 C590 transistor irgb440
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

IRGBC30U

Abstract: D-12
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.682A IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: KSA1220/1220A KSA1220/1220A Audio Frequency Power Amplifier High Frequency Power Amplifier • Complement to KSC2690/KSC2690A TO-126 1 1.Emitter 2. Collectors 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

2SA1532

Abstract: 2SC3930
Contextual Info: Transistor 2SC3930 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1532 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and

c849

Abstract: D-12 IRGBC40K al c850
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1073 IRGBC40K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

STO-23

Abstract: KSA812 KSC1623
Contextual Info: KSC1623 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY OSC STO-23 • Complement to KSA812 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

2SA1127

Abstract: 2SC2634
Contextual Info: Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 Unit: mm 5.0±0.2 5.1±0.2 ● Low noise characteristics. High foward current transfer ratio hFE. 0.7±0.2 ● • Absolute Maximum Ratings

2SA1791

Abstract: 2SC4656
Contextual Info: Transistor 2SA1791 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4656 Unit: mm 0.2+0.1 –0.05 Parameter Symbol Ratings Unit VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V

2SC2377

Contextual Info: Transistor 2SC2377 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 2.5±0.1 • Absolute Maximum Ratings 1.0 4.5±0.1 4.1±0.2 (0.85) (Ta=25˚C) 0.45±0.05 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO

2SC3315

Contextual Info: Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 2.0±0.2 • Features ● ● ● ■ Absolute Maximum Ratings Parameter Ta=25˚C Symbol Ratings 0.45+0.20 –0.10 Collector to base voltage VCBO 30 V VCEO 20

C1008Y TRANSISTOR

Abstract: c1008y C1008YC transistor BU 102 KSC1008 NPN transistor to-92 "high gain" C1008O NPN transistor 500ma TO-92 KSA708 KSC1008C
Contextual Info: KSC1008 tm NPN Epitacial Silicon Transistor Features • Low frequency amplifier medium speed switching. • High Collector-Base Voltage : VCBO=80V. • Collector Current : IC=700mA • Collector Power Dissipation : PC=800mW TO-92 • Suffix “-C” means Center Collector 1.Emitter 2.Collector 3.Base

TF135

Abstract: bf308
Contextual Info: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.

Contextual Info: REV. 1.4 FS8844-DS-14_EN Datasheet FS8844 250 mA Low Quiescent Current LDO Linear Regulator SEP 2006 FS8844 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742

Contextual Info: REV. 1.3 FS8800-DS-13_EN Datasheet FS8800 Low Start-up Voltage PWM Step-up DC-DC Controller SEP 2006 FS8800 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742

Contextual Info: Datasheet Isolated Power Supply IC for Automotive 1 Channel Step-up Switching Regulator Controller BD9031FV-C ●General Description The BD9031FV-C is a 1 channel isolated and step-up switching regulator controller . BD9031FV-C features a wide range of integrated safety

Contextual Info: Datasheet Secondary power supply series for automotive 2.69 to 5.5V, 1.2V Output, 2.25MHz Synchronous Step-Down Converter BD90571EFJ-C ●General Description The BD90571EFJ-C is a synchronous rectification type step-down DC/DC converter with a 2.25MHz fixed

Contextual Info: Preliminary Datasheet LOW POWER PWM CONTROLLER FOR OFF-LINE BATTERY CHARGER General Description Features The AP3700 is a green-mode pulse width modulation PWM controller. It is specially designed for low power applications such as off-line battery chargers,

FS8860-33CJ

Abstract: FS8860
Contextual Info: REV. 1.8 FS8860-DS-18_EN Datasheet FS8860 1.0A Adjustable & Fixed Voltage LDO Linear Regulator AUG 2006 FS8860 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan

Contextual Info: FS8860-DS-19_EN Datasheet AUG 2009 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 1.9 FS8860 Fo 1.0A Adjustable & Fixed Voltage LDO Linear Regulator FS8860 Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

Contextual Info: Atmel ATR4252C All-in-One IC Solution for Active Antennas DATASHEET Features Highly integrated - All-in-one active antenna IC Integrated AGC for AM and FM Integrated driver for AM and FM pin diodes Integrated power supply regulator Integrated antenna sensor

Contextual Info: REV. 2.1 FS8853-DS-21_EN Datasheet FS8853 300 mA LDO Linear Regulator SEP 2006 FS8853 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742 Fax：886-2-28094874

Contextual Info: FS8853-DS-23_EN Datasheet DEC 2009 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 2.3 FS8853 Fo 300 mA LDO Linear Regulator FS8853 Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd.,

Contextual Info: FS8853-DS-24_EN Datasheet MAY 2010 Pr RT Re op UN fe ert E’ re ie nc s e O nl y REV. 2.4 FS8853 Fo r FO 300 mA LDO Linear Regulator FS8853 Fo r FO Pr RT Re op UN fe ert E’ re ie nc s e O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司