HIGH FREQUENCY AMPLIFIERS Search Results

NE-SE5539

Abstract: AN140
Contextual Info: Philips Semiconductors Section 3 High Frequency/Video Amplifiers General Purpose/Linear ICs INDEX NE/SA5204A Wide-band high-frequency amplifier . 181 NE/SA/SE5205AWide-band high-frequency amplifier . 192

2N3019

Contextual Info: 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.

2N3019

Contextual Info: 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.

2N3019

Abstract: 2N301 2N3019-2N3020 2N3020 2N302
Contextual Info: 2N3019 2N3020 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high-frequency amplifier applications. They feature high gain and low saturation

2SA1723

Abstract: BX-0975
Contextual Info: Ordering number:EN4668 PNP Epitaxial Planar Silicon Transistors 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions • Wideband amplifiers. · High-frequency drivers. unit:mm 2009B [2SA1723] Features · High fT fT=1.5GHz typ .

2N5583

Abstract: MRF558
Contextual Info: I MOT OROL A SC XSTRS/R F 4bE D b3b?254 OO^ MOf l e T •MOTb MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line Ip = -5 0 0 m A HIGH FREQUENCY TRANSISTOR PNP SILICON HIGH FREQUENCY TRANSISTOR PNP SILICON . . . designed for applications in high frequency amplifiers and

Contextual Info: Ordering number:ENN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions S21e2=10dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm

2SC5375

Abstract: ITR06394 ITR06395 ITR06396 ITR06397
Contextual Info: Ordering number:ENN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions ⏐S21e⏐2=10dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm

TRANSISTOR KT 837

Abstract: a1046 transistor A1046 A1684
Contextual Info: Ordering number:ENN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions S21e2=10.5dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm

ITR08169

Abstract: 2SC5374 ITR08168 ITR08170 ITR08171 ITR08172
Contextual Info: Ordering number:ENN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions ⏐S21e⏐2=10.5dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm

2SC5375

Abstract: TA-0824 Transistor 4733 transistor kt 801 IC 7484
Contextual Info: Ordering number:EN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions • High gain : S21e =10dB typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. 2 unit:mm

3020

Abstract: 3019 2N3019 3020 transistor 2n3020
Contextual Info: 2N 3019 2N 3020 SILICON PLANAR NPN HIGH-CURRENT, HIGH-FREQUENCY AMPLIFIERS The 2N 3019 and 2N 3020 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case, designed fo r high-current, high-frequency am plifier applications. They feature high gain and low saturation voltages.

Contextual Info: Ordering number:ENN4668 PNP Epitaxial Planar Silicon Transistor 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions • Wideband amplifiers. · High-frequency drivers. unit:mm 2009B [2SA1723] Features 8.0 2.7

2SC5374

Abstract: KT 819 transistor Specification zo 607
Contextual Info: Ordering number:EN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions • High gain : S21e =10.5dB typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. 2 unit:mm

2SA1723

Abstract: ITR04378 ITR04379 ITR04380 ITR04381 ITR04382
Contextual Info: Ordering number:ENN4668 PNP Epitaxial Planar Silicon Transistor 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions • Wideband amplifiers. · High-frequency drivers. unit:mm 2009B [2SA1723] Features 8.0 2.7

Contextual Info: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S 2N3019 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon planar epitaxial NPN transistors in JedecT O -39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation

MRF911

Abstract: F914 2N6604
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA 2N6604 The RF Line N F « 2.7 dB 1.0 GHz HIGH FREQUENCY TRANSISTOR NPN SILICON NPN SILICON HIGH FREQUENCY TRANSISTOR .d e s ig n e d for use in high-frequency, low-noise, small-signal, narrow and wideband amplifiers. Ideal fo r use in m icrostrip th in

npn folded cascode

Abstract: differential pair cascode LM324 DG folded cascode folded cascode op amp EL2044 EL2150 EL2210 LM324 LM324 DP
Contextual Info: Application Note Using Single-Supply High-Frequency Amplifiers Using Single-Supply High-Frequency Amplifiers by Barry Harvey and Mike Wong 20 The trend toward lower power supply voltages has recently inspired the design of integrated single-supply high-frequency amplifiers The greatest use of these circuits is in passing video signals although there are many other applications

311742A

Abstract: application note LMX2531 LMX2531LQ1650
Contextual Info: LMX2531 LMX2531 High Performance Frequency Synthesizer System with Integrated VCO Literature Number: SNAS252P LMX2531 High Performance Frequency Synthesizer System with Integrated VCO General Description Features The LMX2531 is a low power, high performance frequency

LP1983

Abstract: motorola 039
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LP1983 The RF Line NPN Silicon High-Frequency Transistor . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers. lc = 30 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON • High Current-Gain — Bandwidth Product — f j = 4.5 GHz Typ

MRF581

Abstract: MRF581A IS211 MRF581M f5b FERRITE f5b FERRITE bead
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF581 MRF581A The RF Line NPN Silicon High-Frequency Transistors . . . designed for high current low power amplifiers up to 1.0 GHz. • lc = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTORS NPN SILICON Low Noise 2.0 dB @ 500 MHz

100nf(104)mylar capacitor

Abstract: 100nF(104)mylar capacitors 100nF(104) mylar capacitors VFC110AP 104 mylar capacitor datasheet vfc110ap datasheet VFC110 VFC110AG VFC110AG2 VFC110APG4
Contextual Info: VFC110 SBVS021A − OCTOBER 1988 − REVISED APRIL 2007 High-Frequency VOLTAGE-TO-FREQUENCY CONVERTER FEATURES DESCRIPTION D HIGH-FREQUENCY OPERATION: D The VFC110 voltage-to-frequency converter is a third-generation VFC offering improved features and performance. These include higher frequency operation,

2sc377

Contextual Info: S 4 P IV O VERY HIGH-FREQUENCY TRANSISTOR SERIES fcl Use * * * * Wide-band amplifiers UHF, VHF TV tuners CATV converters RF modulators Features * High power gain * Small noise figure * High cutoff frequency ( ):Marking on MCP. CP, PCP. For PNP, (-)sign is omitted.

100nf(104)mylar capacitor

Abstract: 100nF(104)mylar capacitors 104 mylar capacitor datasheet 10nf mylar capacitor vfc110ap datasheet VFC110 VFC110AG VFC110AG2 VFC110AP VFC110APG4
Contextual Info: VFC110 SBVS021A − OCTOBER 1988 − REVISED APRIL 2007 High-Frequency VOLTAGE-TO-FREQUENCY CONVERTER FEATURES DESCRIPTION D HIGH-FREQUENCY OPERATION: D The VFC110 voltage-to-frequency converter is a third-generation VFC offering improved features and performance. These include higher frequency operation,